Author: Wencong ZhuPublisher:
ISBN:
Category :
Languages : en
Pages : 166
Book Description
Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors by Focused Ion Beam
Author: Wencong ZhuPassivation of Amorphous Indium-gallium-zinc Oxide (IGZO) Thin-film Transistors
Author: Nathaniel WalshPublisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 90
Book Description
"Thin-film transistors (TFTs) with channel materials made out of hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) have been extensively investigated. Amorphous silicon continues to dominate the large-format display technology; however newer technologies demand a higher performance TFT which a-Si:H cannot deliver due to its low electron mobility, μn ~ 1 cm2/V*s. Metal-oxide materials such as Indium-Gallium-Zinc Oxide (IGZO) have demonstrated semiconductor properties, and are candidates to replace a Si:H for TFT backplane technologies. This work involves the fabrication and characterization of TFTs utilizing a-IGZO deposited by RF sputtering. An overview of the process details and results from recently fabricated IGZO TFTs following designed experiments are presented, followed by analysis of electrical results. The investigated process variables were the thickness of the IGZO channel material, passivation layer material, and annealing conditions. The use of electron-beam deposited Aluminum oxide (alumina or Al2O3) as back-channel passivation material resulted in improved device stability; however ID VG transfer characteristics revealed the influence of back-channel interface traps. Results indicate that an interaction effect between the annealing condition (time/temperature) and the IGZO thickness on the electrical behavior of alumina-passivated devices may be significant. A device model implementing fixed charge and donor-like interface traps that are consistent with oxygen vacancies (OV) resulted in a reasonable match to measured characteristics. Modified annealing conditions have resulted in a reduction of back-channel interface traps, with levels comparable to devices fabricated without the addition of passivation material."--Abstract.
Amorphous Indium Gallium Zinc Oxide Based Thin Film Transistors and Circuits
Author: Haojun LuoFabrication and Analysis of Indium Gallium Zinc Oxide Transparent Thin Film Transistors
Author: 蘇鵬宇Investigation of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors and Optoelectronic Applications
Author: 楊宗翰Stabilization of Amorphous Indium-Gallium-Zinc Oxide Thin Film Transistors by a Passivation Layer
Author: Composition Engineering for Solution-Processed Gallium-Rich Indium-Gallium-Zinc-Oxide Thin Film Transistors
Author: Isaac Caleb WangPublisher:
ISBN:
Category :
Languages : en
Pages : 60
Book Description
Metal oxides have risen to prominence in recent years as a promising active layer for thin film transistors (TFTs). One of the main reasons for this has been its value in display technology. Conventionally, displays have relied on amorphous hydrogenated silicon (a-Si:H) TFTs but the demand for large area displays with high resolution, fast response time, low power consumption and compatibility with integrated driving circuits have prompted research into other semiconducting materials. As a result, metal oxides have become major prospects to replace a-Si:H with their high-performance electrical characteristics and simplicity of processing, making them valuable switching elements in display technology. Particularly, quaternary metal oxides such as the amorphous Indium-Gallium-Zinc-Oxide (IGZO) have demonstrated extremely high performances as TFTs, prompting extensive research in the field. The conventional method of producing metal oxide thin films has been through vacuum deposition methods such as sputtering. However, for large area applications these vacuum deposition methods face inherent limitations which prevent easy application and device fabrication. Facing these restrictions, solution-processing has become a popularly researched alternative in producing metal oxide thin films due to their simple processing requirements, low cost, and ability to be applied over large areas. In solution-processed IGZO, there have been a couple approaches to improve device performance and stability as well as simplify processing. In this work, we produce a gallium-rich 2:2:1 IGZO TFT using solution processes and study its electrical characteristics and stability. In this paper, we demonstrate a working solution-processed gallium-rich 2:2:1 IGZO TFT and compare it to a solution-processed indium-rich device to quantify its stability and performance. Through this work, we show that solution-processing is a viable fabrication method for gallium-rich IGZO, which can be a high-stability alternative to other compositions of IGZO devices.
Author: 吳昱陞
Author: 
Author: Arun Suresh