Author: Ramakrishna ShivaramPublisher:
ISBN:
Category : Carbon compounds
Languages : en
Pages : 164
Book Description
Fabrication, Measurement, and Simulation of Silicon-germanium-carbon Heterostructure Devices
Author: Ramakrishna ShivaramPublisher:
ISBN:
Category : Carbon compounds
Languages : en
Pages : 164
Book Description
Simulation and Measurement of Silicon-germanium-carbon Heterostructure Devices
Author: Sankaran JayanarayananPublisher:
ISBN:
Category : Electronic circuits
Languages : en
Pages : 142
Book Description
Silicon-Germanium Carbon Alloys
Author: S. PantellidesPublisher: CRC Press
ISBN: 9781560329633
Category : Technology & Engineering
Languages : en
Pages : 552
Book Description
Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
Germanium-silicon Strained Layers and Heterostructures
Author: Suresh C. JainPublisher:
ISBN:
Category : Science
Languages : en
Pages : 328
Book Description
Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.
Fabrication and Analysis of Silicon Homojunction and Silicon/silicon-germanium Heterojunction Minority Carrier Devices Produced by Limited Reaction Processing
Author: Clifford A. KingChemical Abstracts
Author: Fabrication and Characterization of Structures and Rectifiers Based on Silicon Carbide Alloyed with Germanium
Author: Gary L. KatulkaPublisher:
ISBN: 9780549393603
Category : Germanium alloys
Languages : en
Pages :
Book Description
SiC possesses highly unique and interesting properties. The large bandgap and extremely high thermal conductivity make it an excellent material candidate for high voltage and high power electronics which can be exploited for both commercial and military applications. The chemical inertness of SiC is advantageous for applications requiring tolerance to harsh environments and very high temperatures, owing mainly to the strong Si-C sp3 bond. While fabricating ohmic contacts for SiC is very challenging due to large surface barrier heights, once formed the contacts are thermally stable to extremely high temperatures. We have shown in our experiments that specialized ohmic contacts on 4H-SiC are stable and exhibit resistivity changes of at most 3.8% for contacts exposed to the temperature range of 600-1120°C and current densities of 2.5 kA/cm 2 . Reported for the first time by our group in 1999 at the University of Delaware, heterostructure devices with newly developed SiC:Ge alloys were extensively investigated. Rutherford Backscattering Spectrometry (RBS) and X-ray diffraction (XRD) measurements demonstrated thermal stability of the material up to 1000°C and implied an increase in the lattice constant. Although the only practical method for impurity doping, due to the very low diffusivity in SiC, is with ion implantation we experimentally measured the diffusivity of Ge in SiC in the range of 1.05 x 10 -15 cm 2 /s to 1.45 x 10 -15 cm 2 /s. This is considered valuable new information for purposes of precise device processing, considering the implant and contact anneal temperatures for SiC are in excess of 1000°C. SiC/SiC:Ge rectifiers were fabricated and analyzed in collaboration with Northrop Grumman, Baltimore, MD. Our experimental measurements from the rectifiers revealed the forward current was higher by as much as 0.5 mA for SiC/SiC:Ge devices compared to devices without Ge, and built-in voltages were consistently lower by between 100-42 mV. Contact resistance studies showed that SiC:Ge rectifiers had a greatly reduced contact resistance and specific contact resistivity compared to un-implanted SiC devices, for both n and p conductivity types. The Ge in n-SiC reduced the contact resistance and the specific contact resistivity by a factor of 5.6 and 8.8, respectively. In p-SiC, the Ge had an even more pronounced effect, reducing the contact resistance by a factor of 18.6 and lowering the specific contact resistivity by a factor of 14.5. Finally our 2MeV He+ RBS channeling studies suggested that a significant portion of the Ge in SiC:Ge implanted substrates was physically located on Si substitutional lattice sites within the host 4H-SiC crystal. This was true for samples containing between 0.6% and 1.25% Ge, and numerous channeling angles were utilized in the study with support from the Ion Beam Lab at the University of Michigan, Ann Arbor, MI. These results are considered highly important experimental findings which corroborate our earlier work and further promote SiC:Ge as a viable semiconductor material for high-power, high-temperature heterostructures with 4H-SiC.
Dissertation Abstracts International
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 830
Book Description
International Aerospace Abstracts
Author: Silicon-germanium Heterojunction Bipolar Transistors
Author: John D. CresslerPublisher: Artech House
ISBN: 9781580535991
Category : Science
Languages : en
Pages : 592
Book Description
This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.