Fabrication and Evaluation of RF Sputtered Barium Titanate Thin Films PDF Download
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Author: I. H. Pratt Publisher: ISBN: Category : Languages : en Pages : 41
Book Description
Structural, chemical, dielectric, and ferroelectric (limited) characteristics of RF sputtered barium titanate (BaTiO3) are described. Primary interest was to determine film capability for providing high capacitance devices for hybrid and thin film integrated circuits. The extent of ferroelectric film behavior was also of concern for charge storage use in the development of thin film image plates for miniature solid state facsimile cameras. Metal-dielectric-metal capacitor structures incorporating amorphous or polycrystalline BaTiO3 films were fabricated and evaluated. (Author).
Author: I. H. Pratt Publisher: ISBN: Category : Languages : en Pages : 41
Book Description
Structural, chemical, dielectric, and ferroelectric (limited) characteristics of RF sputtered barium titanate (BaTiO3) are described. Primary interest was to determine film capability for providing high capacitance devices for hybrid and thin film integrated circuits. The extent of ferroelectric film behavior was also of concern for charge storage use in the development of thin film image plates for miniature solid state facsimile cameras. Metal-dielectric-metal capacitor structures incorporating amorphous or polycrystalline BaTiO3 films were fabricated and evaluated. (Author).
Author: Parisa Sahebi Publisher: ISBN: Category : Languages : en Pages :
Book Description
Ferroelectric BaTiO3 (BTO) thin films were deposited on polycrystalline nickel disks and silicon wafer substrates by rf magnetron sputtering. Nickel oxide (NiO) and nanocrystalline nickel (nc-Ni) layers were used as interfacial buffer layers. Microstructural studies with X-ray diffraction and transmission electron microscopy reveal that the BTO films deposited at temperatures lower than 700°C have an amorphous structure. However, the BTO films sputtered at temperatures higher than 700°C are partially crystalline. BTO films have a good and continuous interface with both interfacial layers with no interdiffusion or reaction with the substrates. In the case of BTO deposition with nc-Ni interlayer at higher deposition temperature of 800°C, a thin NiO layer forms between the nc-Ni and BTO films. Having nc-Ni as an interfacial layer enhances surface morphology and decreases surface roughness. This study shows that nc-Ni can act as a proper interfacial layer between a ceramic like BTO and the metallic substrates and is a better alternative for NiO buffer layer.
Author: C. A. T. Salama Publisher: ISBN: Category : Languages : en Pages : 6
Book Description
The physical and electrical properties of barium titanate films approximately 1 micrometer thick, prepared by rf sputtering onto silicon substrates in both pure argon and 95% argon-5% oxygen glow discharges were investigated. The deposition rate, crystal structure, and refractive index of the films were investigated as a function of deposition temperature and sputtering gas. The electrical characteristics of the films, including the dielectric constant, loss tangent, conductivity, insulator bulk charge, charge storage at the BaTiO3-SiO2 interface, and ferroelectricity were also investigated. (Author).
Author: I. H. Pratt
Author: I. H. Pratt
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Author: Parisa Sahebi
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Author: E. Siciunas
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Author: C. A. T. Salama
Author: Janda K. G. Panitz