Author: David Aaron Routenberg
Publisher:
ISBN:
Category :
Languages : en
Pages : 294
Book Description
Fabrication and Characterization of Silicon Nanowire Field-effect Sensors
Author: David Aaron Routenberg
Publisher:
ISBN:
Category :
Languages : en
Pages : 294
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 294
Book Description
Fabrication and Characterization of Silicon-on-insulator Field-effect-transistor-based Nanoribbon Sensors
Author: Poornika Gayathri Fernandes
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 352
Book Description
This work focuses on a variety of issues that impact the electrical properties of Silicon-on-insulator FET-based sensor devices. Biological solutions consist of protein or DNA in an electrolytic solution containing salt ions. Some of these ions, such as Na, have long been known to cause instabilities in MOS devices. The effect of mobile ions on SOI-based sensors is studied. Na is shown to cause permanent hysteresis in the devices while K is not. Devices with the gate oxide protected by self-assembled monolayers (SAMs) do not show hysteresis.
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 352
Book Description
This work focuses on a variety of issues that impact the electrical properties of Silicon-on-insulator FET-based sensor devices. Biological solutions consist of protein or DNA in an electrolytic solution containing salt ions. Some of these ions, such as Na, have long been known to cause instabilities in MOS devices. The effect of mobile ions on SOI-based sensors is studied. Na is shown to cause permanent hysteresis in the devices while K is not. Devices with the gate oxide protected by self-assembled monolayers (SAMs) do not show hysteresis.
Silicon Nanowire Sensor from Electron Beam Litography
Author: Siti Fatimah Abd Rahman
Publisher:
ISBN:
Category : Nanowires
Languages : en
Pages : 103
Book Description
This study demonstrates the process development of silicon nanowires (SiNWs) sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. There are three objectives that applied to this research work. The first objective is to design masks using GDSII Editor Software and AutoCAD, respectively. The second objective is to apply a top-down approach method consists of electron beam and conventional mixed lithography process for device fabrication. Then, the final objective of this work is to analyze the electrical characteristic of the fabricated device in terms of I-V relations using semiconductor parameter analyzer (SPA).
Publisher:
ISBN:
Category : Nanowires
Languages : en
Pages : 103
Book Description
This study demonstrates the process development of silicon nanowires (SiNWs) sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. There are three objectives that applied to this research work. The first objective is to design masks using GDSII Editor Software and AutoCAD, respectively. The second objective is to apply a top-down approach method consists of electron beam and conventional mixed lithography process for device fabrication. Then, the final objective of this work is to analyze the electrical characteristic of the fabricated device in terms of I-V relations using semiconductor parameter analyzer (SPA).
Synthesis and Characterization of Silicon Nanowires and Silicon Nanowire Based Field Effect Transistor
Author: Jing Lei Xiang
Publisher:
ISBN:
Category : Nanowires
Languages : en
Pages : 41
Book Description
Publisher:
ISBN:
Category : Nanowires
Languages : en
Pages : 41
Book Description
Памятка военнопленного
Fabrication and Characterization of Silicon Nanowire FETs with Coupled Dopants Induced Quantum Dot
Fabrication and Characterization of Semiconducting Nanowires for Tunnel Field Effect Transistors
Design, Fabrication, and Characterization of Field-effect and Impedance Based Biosensors
Author: Xuejin Wen
Publisher:
ISBN:
Category :
Languages : en
Pages : 188
Book Description
Abstract: Highly sensitive biological sensors are important to the development of biological and medical science. The purpose of this work is to develop highly sensitive AlGaN/GaN heterostructure field-effect transistors (HFETs) and silicon on insulator (SOI) nanowire biosensors. Impedance based lipid membrane characterization is also discussed.
Publisher:
ISBN:
Category :
Languages : en
Pages : 188
Book Description
Abstract: Highly sensitive biological sensors are important to the development of biological and medical science. The purpose of this work is to develop highly sensitive AlGaN/GaN heterostructure field-effect transistors (HFETs) and silicon on insulator (SOI) nanowire biosensors. Impedance based lipid membrane characterization is also discussed.