Author: Hyung-Seok LeePublisher:
ISBN:
Category :
Languages : en
Pages : 74
Book Description
Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors
Author: Hyung-Seok LeeDesign and Fabrication of 4H Silicon Carbide Power Bipolar Junction Transistors
Author: Jianhui ZhangPublisher:
ISBN: 9780542955099
Category : Silicon carbide
Languages : en
Pages : 320
Book Description
4H silicon carbide (4H-SiC) bipolar junction transistor (BJT) is a very promising wide band gap semiconductor switching device for high temperature and high power applications. The superior material properties of 4H-SiC, including wide band gap, high breakdown electric field, high thermal conductivity make 4H-SiC ideal for power electronics applications. 4H-SiC power BJT is an intrinsically normally-off switching device, has higher current handling capabilities due to its bipolar character, and is free of the gate oxide problems as in 4H-SiC metal-oxide-semiconductor field effect transistor (MOSFET). Moreover, 4H-SiC BJT easily surpasses silicon BJT with higher current gain, much larger safe-operating-area (SOA) and free of thermal breakdown problem. 4H-SiC power BJT has been gaining more and more attentions since it was first reported in 2000.
Design, Fabrication and Characterization of a Silicon Bipolar Transistor
Author: Jiun-yih YuPublisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 286
Book Description
Advancing Silicon Carbide Electronics Technology I
Author: Konstantinos ZekentesPublisher: Materials Research Forum LLC
ISBN: 1945291850
Category : Technology & Engineering
Languages : en
Pages : 249
Book Description
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Fabrication and Modeling of Silicon Carbide Bipolar Junction Transistors
Author: Bruce Robert GeilSilicon Carbide Semiconductor Device Fabrication and Characterization
Author: National Aeronautics and Space Administration (NASA)Publisher: Createspace Independent Publishing Platform
ISBN: 9781722766245
Category :
Languages : en
Pages : 34
Book Description
A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated. Davis, R. F. and Das, K. Unspecified Center N00014-85-K-0182; NAG3-782...
Design, Characterization, Modeling and Analysis of High Voltage Silicon Carbide Power Devices
Author: Jun WangPublisher:
ISBN:
Category :
Languages : en
Pages : 186
Book Description
Keywords: emitter turn-off thyristor (ETO), insulated gate bipolar transistor (IGBT), Silicon carbide (SiC), metal-oxide-semiconductor field effect transistor, solid-state transformer (SST).
Silicon Carbide, Volume 2
Author: Peter FriedrichsPublisher: John Wiley & Sons
ISBN: 9783527629084
Category : Science
Languages : en
Pages : 520
Book Description
Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
The Fabrication and Characterization of a 4H-silicon Carbide Metal-semiconductor Field Effect Transistor
Author: Ira ArdoinPublisher:
ISBN:
Category :
Languages : en
Pages : 118
Book Description
The fabrication of the 4H-silicon carbide metal semiconductor field effect transistor (MESFET) is occurring in the Microelectronics Engineering Laboratory (MEL). There are various experiments occurring that characterize different aspects of the device, in order to achieve its optimum performance. The silicon dioxide (SiO2) layer achieves widespread use in the microelectronics industry. This may be used for the dielectric field effect in MOS (metal oxide semiconductor) devices, as a field oxide for isolation between source, gate, and drain contacts, or for device isolation on a very crowded integrated circuit (IC). In this project, the SiO2 is used for isolation between source, gate, drain, and devices. It is imperative to minimize the defect density in the SiO2 layer to increase the reliability and performance of these devices. The quality of the SiO2 is thus characterized by the fabrication of SiC MOS capacitors. Thermal oxidation has been utilized in the fabrication of the SiO2 in the 4H-SiC MOS capacitors adopting the nickel-SiO2-4H-SiC (Ni/SiO2/4H-SiC) structure. The SiO2 layers have been grown onto Si-face and C-face 4H-SiC substrates employing the techniques of sputtering and wet thermal oxidation. The recipes for deposition by these techniques are optimized by trial and error method. Atomic force microscopy (AFM) analysis is employed in the investigation of growth effects of SiO2 on the Si- and C-face of these SiC substrates. MOS capacitors are made utilizing sputtering and wet oxidation methods on the Si-face of 4H-SiC wafers, which are studied utilizing C-V (capacitance versus voltage) techniques.
Gallium Nitride And Silicon Carbide Power Devices
Author: B Jayant BaligaPublisher: World Scientific Publishing Company
ISBN: 9813109424
Category : Technology & Engineering
Languages : en
Pages : 592
Book Description
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.