Fabrication and Characterization of Silicon Carbide Alloys PDF Download

Author: William Rafaniello
Publisher:
ISBN:
Category : Ceramic materials
Languages : en
Pages : 252

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Author: Kristofer J. Roe
Publisher:
ISBN:
Category : Heterostructures
Languages : en
Pages : 264

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Author: Kaushal D. Patel
Publisher:
ISBN:
Category :
Languages : en
Pages : 69

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Book Description
This research work is dealt with the fabrication of the optically triggered silicon carbide MESFET. The fabrication of the silicon carbide MESFET device has been chronologically described to study the device structure, process development, and material properties. In order to understand the fabrication process, the optimization of photo-resist processing, ion implanted doping process, chemical etching process, silicon oxide growth on SiC material, stoichiometry silicon oxide with SiC material and comparative study of silicon oxide growth for silicon and carbon faces of SiC, nickel and indium tin oxide materials deposition for ohmic and Schottky contacts have been studied to optimize the unit steps of fabrication process. A detailed study on ion implantation, high-temperature annealing, and electrical device isolation has been performed. Different failure analyses for wafer and device level have been conducted to monitor the device performance, fabrication processing and material properties. I-V characteristics of fabricated SiC MESFET device has been measured by the curve tracer and compared with other fabricated GaN MESFE device.

Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313550
Category : Technology & Engineering
Languages : en
Pages : 565

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Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Author: Jiyang Fan
Publisher: Springer
ISBN: 3319087266
Category : Technology & Engineering
Languages : en
Pages : 336

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Book Description
This book brings together the most up-to-date information on the fabrication techniques, properties, and potential applications of low dimensional silicon carbide (SiC) nanostructures such as nanocrystallites, nanowires, nanotubes, and nanostructured films. It also summarizes the tremendous achievements acquired during the past three decades involving structural, electronic, and optical properties of bulk silicon carbide crystals. SiC nanostructures exhibit a range of fascinating and industrially important properties, such as diverse polytypes, stability of interband and defect-related green to blue luminescence, inertness to chemical surroundings, and good biocompatibility. These properties have generated an increasing interest in the materials, which have great potential in a variety of applications across the fields of nanoelectronics, optoelectronics, electron field emission, sensing, quantum information, energy conversion and storage, biomedical engineering, and medicine. SiC is also a most promising substitute for silicon in high power, high temperature, and high frequency microelectronic devices. Recent breakthrough pertaining to the synthesis of ultra-high quality SiC single-crystals will bring the materials closer to real applications. Silicon Carbide Nanostructures: Fabrication, Structure, and Properties provides a unique reference book for researchers and graduate students in this emerging field. It is intended for materials scientists, physicists, chemists, and engineers in microelectronics, optoelectronics, and biomedical engineering.

Author: Konstantinos Zekentes
Publisher: Materials Research Forum LLC
ISBN: 1945291842
Category : Technology & Engineering
Languages : en
Pages : 250

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Book Description
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.

Author: Matthias Lang
Publisher:
ISBN: 9780542727542
Category : Germanium alloys
Languages : en
Pages :

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Book Description
The unique material properties of Silicon-Carbide (SiC) make it a superior choice over Silicon or Gallium-Arsenide for applications in power electronics. Unfortunately, SiC semiconductor technology was only developed in recent years and its processes are still immature. Additionally, proper lattice matched compatible elements and alloy materials are rare, which gives other wide-bandgap materials, such as Gallium-Nitride, dominance. Furthermore, the well-established standard CMOS processes can not be applied to SiC in all cases. Finding proper complementary elements and alloys could bring SiC into competition with other wide-bandgap materials again. This thesis describes the incorporation of Germanium (Ge) in SiC as a way of bandgap engineering. Alloying with Germanium is believed to lower the bandgap of SiC, therefore using it to create heterojunction devices. I will introduce Ge-alloyed SiC heterojunction diodes, transistors and Schottky-barrier diodes, and address its advantages over their isomaterial devices. The design of the above mentioned devices will be reported, as well as all fabrication steps. Finally, a thorough analysis and evaluation will be concluded based on device measurements.

Author: Gary L. Katulka
Publisher:
ISBN: 9780549393603
Category : Germanium alloys
Languages : en
Pages :

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Book Description
SiC possesses highly unique and interesting properties. The large bandgap and extremely high thermal conductivity make it an excellent material candidate for high voltage and high power electronics which can be exploited for both commercial and military applications. The chemical inertness of SiC is advantageous for applications requiring tolerance to harsh environments and very high temperatures, owing mainly to the strong Si-C sp3 bond. While fabricating ohmic contacts for SiC is very challenging due to large surface barrier heights, once formed the contacts are thermally stable to extremely high temperatures. We have shown in our experiments that specialized ohmic contacts on 4H-SiC are stable and exhibit resistivity changes of at most 3.8% for contacts exposed to the temperature range of 600-1120°C and current densities of 2.5 kA/cm 2 . Reported for the first time by our group in 1999 at the University of Delaware, heterostructure devices with newly developed SiC:Ge alloys were extensively investigated. Rutherford Backscattering Spectrometry (RBS) and X-ray diffraction (XRD) measurements demonstrated thermal stability of the material up to 1000°C and implied an increase in the lattice constant. Although the only practical method for impurity doping, due to the very low diffusivity in SiC, is with ion implantation we experimentally measured the diffusivity of Ge in SiC in the range of 1.05 x 10 -15 cm 2 /s to 1.45 x 10 -15 cm 2 /s. This is considered valuable new information for purposes of precise device processing, considering the implant and contact anneal temperatures for SiC are in excess of 1000°C. SiC/SiC:Ge rectifiers were fabricated and analyzed in collaboration with Northrop Grumman, Baltimore, MD. Our experimental measurements from the rectifiers revealed the forward current was higher by as much as 0.5 mA for SiC/SiC:Ge devices compared to devices without Ge, and built-in voltages were consistently lower by between 100-42 mV. Contact resistance studies showed that SiC:Ge rectifiers had a greatly reduced contact resistance and specific contact resistivity compared to un-implanted SiC devices, for both n and p conductivity types. The Ge in n-SiC reduced the contact resistance and the specific contact resistivity by a factor of 5.6 and 8.8, respectively. In p-SiC, the Ge had an even more pronounced effect, reducing the contact resistance by a factor of 18.6 and lowering the specific contact resistivity by a factor of 14.5. Finally our 2MeV He+ RBS channeling studies suggested that a significant portion of the Ge in SiC:Ge implanted substrates was physically located on Si substitutional lattice sites within the host 4H-SiC crystal. This was true for samples containing between 0.6% and 1.25% Ge, and numerous channeling angles were utilized in the study with support from the Ion Beam Lab at the University of Michigan, Ann Arbor, MI. These results are considered highly important experimental findings which corroborate our earlier work and further promote SiC:Ge as a viable semiconductor material for high-power, high-temperature heterostructures with 4H-SiC.

Author: Kobchat Wongchotigul
Publisher:
ISBN:
Category :
Languages : en
Pages : 224

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Author: National Aeronautics and Space Administration (NASA)
Publisher: Createspace Independent Publishing Platform
ISBN: 9781722766245
Category :
Languages : en
Pages : 34

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A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated. Davis, R. F. and Das, K. Unspecified Center N00014-85-K-0182; NAG3-782...