Author: Hou Jang LeePublisher:
ISBN:
Category :
Languages : en
Pages : 238
Book Description
Fabrication and Characterization of AlGaAs/InGaAs-based Pseudomorphic High Electron Mobility Transistors (pHEMTs)
Author: Hou Jang LeeFabrication of AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) with Electroless Plated Technology
Author: 黃怡文Electrical and Optical Characterization of Pseudomorphic AlGaAs/InGaAs High Electron Mobility Transistors
Author: William E. WintersFabrication and Characterization of InAlAs/InGaAs High Electron Mobility Transistors on Plastic Flexible Substrate
Author: Jinshan ShiPublisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
The development of future flexible electronics requires combining high electrical performance devices (i.e. millimeter and sub-millimeter wave electronic devices) with mechanical flexiblility and stability. However, a variety of existing technologies such as organic thin film transistors, amorphous silicon, and polycrystalline-silicon are limited by their poor transport properties. High electron mobility transistors (HEMTs) based on III-V materials have been used in the field of ultra-high frequency microwave applications for a long time. This work develops a feasible method for transferring conventional HEMTs onto the flexible substrate. By the means of adhesive bonding technique, 100nm-gate InAlAs/InGaAs HEMTs have been transferred onto polyimide film (Kapton) and electrically characterized in static and dynamic regime. Through the epitaxial layers optimization, finally, the fabricated devices are able to suppress Kink effect and provide high cut-off frequencies (ft=160GHz and fmax=290GHz) in unbent condition. These microwave characteristics are comparable to those obtained on 100nm-gate HEMTs on rigid substrate. Moreover, measured devices for various bending radius and bending directions show no obvious electrical degradation (lower than 15%).
Chemical Abstracts
Author: Fabrication of AlGaAs/InGaAs Pseudomorphic Modulation Doped Field Effect Transistors with P-Doped Surface Layers
Author: Thomas E. McLaughlinPublisher:
ISBN:
Category :
Languages : en
Pages : 145
Book Description
In this thesis modulation doped field-effect transistors (MODFETs) were fabricated. Two recently developed improvements to the MODFET structure were incorporated to produce an electronic device that had never before been fabricated. Highly p-doped surface layers were incorporated under the gate contact of the device. These layers have been shown to increase the Schottky barrier height at the MODFETs. Pseudomorphic AlGaAs/InGaAs technology was also incorporated for its proven unsurpassed electron saturation velocity and resulting high speed of operation. To evaluate the response of these ES pseudomorphic devices, their characteristics were measured and compared directly with those of reference samples fabricated at the reference transistors were etched off chemically just before deposition of gate contact metal. The peak transconductance, threshold voltage, contact resistance and barrier height of all devices were measured at direct current (DC). Also, microwave S-parameters were measured over the range of 2 to 12 gigahertz (GHz).
Microelectronics Technology and Devices, SBMICRO 2002
Author: Electrochemical Society. Electronics DivisionPublisher: The Electrochemical Society
ISBN: 9781566773287
Category : Technology & Engineering
Languages : en
Pages : 506
Book Description
Thermal and Small-signal Characterisation of AlGaAs
Author: Jimmy Pang Hoaw TanPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Rapid advancement in wireless communications over the years has been the driving force for many novel technologies providing compact and low cost solutions. Recent development of multilayer coplanar waveguide (CPW) MMIC technology promises realization of 3D MMIC in which large area-occupying passive components are translated from horizontal into vertical configuration resulting compact structure. The other main advantages of this technology are elimination of via-holes and wafer-thinning giving alternative performance solution, if not better, from the traditional MMIC. In this thesis, thermal and small-signal characteristics of prefabricated AlGaAs/InGaAs pseudomorphic high electron mobility transistors (pHEMTs) on semi-insulating (S.I.) GaAs substrate incorporated in the 3D MMIC technology have been analysed and modelled for the first time. A comprehensive small-signal parameter extraction procedure has been successfully developed which automatically determines the device small-signal parameters directly from the measured S-parameters. The developed procedure is unique since it provides a great deal of data on measured devices over a wide bias, temperature and frequency range for future incorporation of different active devices for the 3D MMIC technology and provides a first hand knowledge of how the multilayer structure will affect the performance of pre-fabricated pHEMTs. The extracted small-signal models of both pre- and post- multilayer processed pHEMTs have been compared and validated to the RF S-parameters measurements. The main focus was drawn upon the temperature dependent model parameters and how the underlying physics of the transistors behave in response to the change of temperature. These novel insights are especially valuable for devices designed specifically for high power applications like power amplifiers where tremendous heat could be generated. The data can also be interpreted as a way to optimise the multilayer structure, for example, alternative material with different properties can be implemented. The governing physics affecting device performance are also modelled and discussed empirically in details through extracted device parameters. These investigations would assist in the development of reliable, efficient and low cost production of future compact 3D multilayer CPW MMICs.
Physics at Surfaces and Interfaces
Author: B. N. DevPublisher: World Scientific
ISBN: 9789812704221
Category : Science
Languages : en
Pages : 204
Book Description
Clean surfaces and absorbed layers: structure and morphology. Honeycombs, triangles and bright stars: the adatom-induced reconstruction of Pt(111) / Shobhana Narasimhan and Raghani Pushpa. Metallic surfaces under elevated gas pressure studied in situ by scanning tunneling microscopy: O[symbol], H[symbol]/Au(111); CO/Au(110) / F.J.C.S. Aires, C. Deranlot, Y. Jugnet, L. Piccolo and J.-C. Bertolini. X-ray structural analysis of semiconductor-electrolyte interfaces / S. Warren [und weitere]. Aspects of heteroepitaxial growth / S.M. Shivaprasad -- Quantum well, wire and dot: structure and transport. Growth and characterization of P-HEMT structures grown by molecular beam epitaxy / R. Muralidharan [und weitere]. Spin transport in a two-dimensional electron gas / T.P. Pareek and P. Bruno. Stepped silicon templates for quantum wire structures / I.K. Robinson, P.A, Bennett and F.J. Himpsel. Scanning tunneling microscopy study of epitaxial growth of Si and Ge on silicon during growth / Bert Voigtländer. Growth of self-assembled epitaxial germanium nanoislands on silicon surfaces by molecular beam epitaxy / D.K. Goswami [und weitere]. Raman spectroscopic studies on elastic strain at germanium particles-silicon matrix interface / Anushree Roy and Sangeeta Sahoo -- Layered synthetic microstructures. Layered synthetic microstructures: importance of a combined X-ray standing wave and X-ray reflectivity analysis / B.N. Dev. Development of multilayers for hard X-ray optics / Y. Tawara [und weitere]. Pure nuclear reflections from natural FeN[symbol]/[symbol]Fe N[symbol] isotopic multilayer / A. Gupta [und weitere] -- Surface modification by energetic ion beams. Scanning probe studies of swift heavy ion irradiated semiconductor surfaces / J.P. Singh and D. Kanjilal. Ion irradiation effects and ion beam studies of semiconductor multilayers / S.V.S. Nageswara Rao [und weitere]. Surface modifications in silicon(l00) due to antimony implantation / Shikha Varma, Soma Dey and V. Ganesan
Design, Fabrication and Characterization of Gallium Nitride High-electron-mobility Transistors
Author: Jonathan George FelbingerPublisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Over the past few years, systems based on gallium nitride high-electron-mobility transistors (GaN HEMTs) have increasingly penetrated the markets for cellular telephone base stations, RADAR, and satellite communications. High power (several W/mm), continuous-wave (CW) operation of microwave HEMTs dissipates heat; as the device increases in temperature, its electron mobility drops and performance degrades. To enhance high-power performance and enable operation in high ambient temperature environments, the AlxGa1[-]xN/GaN epitaxial layers are attached to polycrystalline diamond substrates. e lower surface temperature rise on GaN-on- diamond is directly measured; subsequently, improved electrical performance is demonstrated on diamond versus the native (Si) substrates. Benchmark AlxGa1[-]xN/GaN devices are fabricated on SiC for comparison to diamond, Si, and bulk GaN substrates; the merits and performance of each is compared. In collaboration with Group4 Labs, X-band amplifier modules based on GaN-on-diamond HEMTs have been demonstrated for the first time. Recent efforts have focused on substituting AlxIn1[-]xN barriers in place of AlxGa1[-]xN to achieve higher output power at microwave frequencies and addressing the challenges of this new material system. Ultimately, these techniques may be combined to attain the utmost in device performance.