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Fabrication and Characterization of a Silicon Carbide Alpha Detector for Molten Salt Application

Fabrication and Characterization of a Silicon Carbide Alpha Detector for Molten Salt Application PDF Author: Joshua Taylor Jarrell
Publisher:
ISBN:
Category : Nuclear engineering
Languages : en
Pages : 195

Book Description
There exists a need for monitoring the actinide concentrations in elevated temperature molten salt environments. Reprocessing of used nuclear fuel through pyroprocessing is being investigated as a viable method to manage the growing stockpile of used nuclear fuel. Idaho National Laboratory has demonstrated the ability to reprocess both breeder and blanket fuel from the Experimental Breeder Reactor II using an electrorefining system. This system uses a molten eutectic salt mixture of lithium chloride and potassium chloride. This electrorefining system can produce high purity uranium ingots and mixed uranium-plutonium ingots. The fundamental electrochemistry used for this process precludes the separation of high purity plutonium when operated within the suggested process limits. However, special nuclear material may be diverted by operating outside of the normal process. Complete draw down of the uranium dissolved into the molten salt would allow for the subsequent removal of high purity plutonium. Monitoring of the operational history of the electrorefiner is therefore essential to address these non-proliferation and safeguard concerns. There is thus a need to monitor the concentrations of individual elements and isotopes present in the electrorefiner salt. Currently, such assays require time on the order of weeks to provide an accurate description of isotopic concentrations within the salt. Thus, a near real-time measurement system for the actinide isotopic concentrations within the salt is needed. All actinide isotopes of interest to non-proliferation and safeguards interests emit characteristic alpha particles. Semiconductor radiation detectors have been shown to provide a compact, high energy resolution solution to spectroscopic measurement needs. Silicon carbide, a wide band-gap semiconductor, provides elevated temperature operation capability and corrosion resistance in the molten salt environment that is superior to silicon. As a result, for this work, alpha radiation detectors comprised of 4H-SiC with Schottky barrier contacts have been fabricated and shown to operate above 500oC. Detector contact compositions of nickel-platinum was explored as possible Schottky contact structures. The electrical and diode characteristics of the detectors were measured. Alpha spectra from multiple source isotopes and source geometries were obtained in vacuum with the detector heated from 20oC to 500oC. The resulting detector behavior including alpha spectrum centroid position and detector energy resolution were measured. To avoid energy attenuation in the molten salt, a repeatable method for depositing actinides to the surface of the detector was devised that allows for repeated spectroscopic measurements by a single detector. The resilience of detector performance to submersion in a molten salt was investigated as well as energy resolution during elevated temperature operation. Detectors were characterized prior to being submerged in a 500oC molten LiCl-KCl eutectic salt for increasing time intervals. After submersion, the detectors were again characterized to identify any degradation. Detector packaging capable of withstanding the corrosive 500oC molten salt environment was developed which allows for electrical connections between the detector and spectrometry equipment. The packaging was designed to allow for actinide deposition on the active area of the detector, allowing for accurate calculations of the actinide mass deposited by a known current. Additionally, nuclear forensic applications of 4H-SiC alpha detectors in conjunction with electrodeposited source fabrication were explored. A method was determined to calculate the 235U enrichment in the product stream of an enrichment facility through measurement of the 234U and 235U enrichments in an electrodeposited source fabricated from depleted uranium.

Fabrication and Characterization of a Silicon Carbide Alpha Detector for Molten Salt Application

Fabrication and Characterization of a Silicon Carbide Alpha Detector for Molten Salt Application PDF Author: Joshua Taylor Jarrell
Publisher:
ISBN:
Category : Nuclear engineering
Languages : en
Pages : 195

Book Description
There exists a need for monitoring the actinide concentrations in elevated temperature molten salt environments. Reprocessing of used nuclear fuel through pyroprocessing is being investigated as a viable method to manage the growing stockpile of used nuclear fuel. Idaho National Laboratory has demonstrated the ability to reprocess both breeder and blanket fuel from the Experimental Breeder Reactor II using an electrorefining system. This system uses a molten eutectic salt mixture of lithium chloride and potassium chloride. This electrorefining system can produce high purity uranium ingots and mixed uranium-plutonium ingots. The fundamental electrochemistry used for this process precludes the separation of high purity plutonium when operated within the suggested process limits. However, special nuclear material may be diverted by operating outside of the normal process. Complete draw down of the uranium dissolved into the molten salt would allow for the subsequent removal of high purity plutonium. Monitoring of the operational history of the electrorefiner is therefore essential to address these non-proliferation and safeguard concerns. There is thus a need to monitor the concentrations of individual elements and isotopes present in the electrorefiner salt. Currently, such assays require time on the order of weeks to provide an accurate description of isotopic concentrations within the salt. Thus, a near real-time measurement system for the actinide isotopic concentrations within the salt is needed. All actinide isotopes of interest to non-proliferation and safeguards interests emit characteristic alpha particles. Semiconductor radiation detectors have been shown to provide a compact, high energy resolution solution to spectroscopic measurement needs. Silicon carbide, a wide band-gap semiconductor, provides elevated temperature operation capability and corrosion resistance in the molten salt environment that is superior to silicon. As a result, for this work, alpha radiation detectors comprised of 4H-SiC with Schottky barrier contacts have been fabricated and shown to operate above 500oC. Detector contact compositions of nickel-platinum was explored as possible Schottky contact structures. The electrical and diode characteristics of the detectors were measured. Alpha spectra from multiple source isotopes and source geometries were obtained in vacuum with the detector heated from 20oC to 500oC. The resulting detector behavior including alpha spectrum centroid position and detector energy resolution were measured. To avoid energy attenuation in the molten salt, a repeatable method for depositing actinides to the surface of the detector was devised that allows for repeated spectroscopic measurements by a single detector. The resilience of detector performance to submersion in a molten salt was investigated as well as energy resolution during elevated temperature operation. Detectors were characterized prior to being submerged in a 500oC molten LiCl-KCl eutectic salt for increasing time intervals. After submersion, the detectors were again characterized to identify any degradation. Detector packaging capable of withstanding the corrosive 500oC molten salt environment was developed which allows for electrical connections between the detector and spectrometry equipment. The packaging was designed to allow for actinide deposition on the active area of the detector, allowing for accurate calculations of the actinide mass deposited by a known current. Additionally, nuclear forensic applications of 4H-SiC alpha detectors in conjunction with electrodeposited source fabrication were explored. A method was determined to calculate the 235U enrichment in the product stream of an enrichment facility through measurement of the 234U and 235U enrichments in an electrodeposited source fabricated from depleted uranium.

High Temperature Characterization and Endurance Testing of Silicon Carbide Schottky Barrier Alpha Detectors

High Temperature Characterization and Endurance Testing of Silicon Carbide Schottky Barrier Alpha Detectors PDF Author: Joshua T. Jarrell
Publisher:
ISBN:
Category :
Languages : en
Pages : 78

Book Description
There is a need for alpha detection systems which can operate in high temperature environments for long periods of time. The needs include the measurement of actinide concentrations in reprocessing of nuclear waste by means of pyroprocessing as well as in molten salt reactors. Silicon carbide is well suited to high temperature applications, has good corrosion resistance, has a wide band gap, and being a semiconductor material, when used on a particle detector exhibits high stopping power for charged particles in comparison to gas-filled detectors. As a result of these material properties, silicon carbide Schottky diodes are well suited to alpha particle detection and identification in high temperature environments.

Preparation and Characterization of Single Crystals and Epitaxial Layers of Silicon Carbide by Molten Salt Electrolysis

Preparation and Characterization of Single Crystals and Epitaxial Layers of Silicon Carbide by Molten Salt Electrolysis PDF Author: T. H. Geballe
Publisher:
ISBN:
Category :
Languages : en
Pages : 27

Book Description
The electrodeposition of silicon carbide from various molten salt systems is described. The most promising system of those studied to date is the binary Li2CO3/SiO2 system with electrolysis proceeding using SiC electrodes at 1000-1050C. Considerable progress has been made towards optimizing the conditions used for electrodeposition. Zirconium or vitreous carbon crucibles are most favorable from the standpoint of the stability of the lithium carbonate against decomposition. An SiO2 concentration of 0.20 + or - 0.05 appears most favorable, with deposition proceeding at a constant potential in the region of 0.5V. Studies aimed at closer specification of optimum conditions are continuing. Electrodeposited SiC is normally polycrystalline, but there is evidence that epitaxial deposition on a single crystal alpha-SiC substrate has been achieved. This observation, if confirmed by more detailed study, would mean that the second major goal of this program has been achieved. (Author).

Silicon Carbide Semiconductor Device Fabrication and Characterization

Silicon Carbide Semiconductor Device Fabrication and Characterization PDF Author: National Aeronautics and Space Administration (NASA)
Publisher: Createspace Independent Publishing Platform
ISBN: 9781722766245
Category :
Languages : en
Pages : 34

Book Description
A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated. Davis, R. F. and Das, K. Unspecified Center N00014-85-K-0182; NAG3-782...

Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 602

Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Fabrication and Characterization of Photoconductive AlGaN Detectors/Structural Characterization of SiC Wafers

Fabrication and Characterization of Photoconductive AlGaN Detectors/Structural Characterization of SiC Wafers PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 23

Book Description
Structure of silicon carbide wafers have been evaluated by x-ray topography, high resolution x-ray diffraction, etching, Atomic Force Microscopy, and related techniques. The low angle grain boundaries were imaged by White Beam Synchrotron X-Ray Topography and mis-orientations quantitatively mapped out by x-ray diffraction. The dominant component of mis-orientation was basal plane tilt. The formation mechanism is most likely due to buckling of the rigidly mounted SiC seed during initial stages of growth. The morphology of hexagonal voids was studied by optical microscopy and AFM. Voids originate at the seed crystal/crucible lid interface and move through the boule during growth. Interaction of void and grown in dislocations leads to formation of dislocation arrays and open core screw dislocations underneath the void. It appears to be the dominant formation mechanism of micropipes.

Fabrication and Characterization of Beta Silicon Carbide Discrete Devices and Integrated Circuit

Fabrication and Characterization of Beta Silicon Carbide Discrete Devices and Integrated Circuit PDF Author: Kobchat Wongchotigul
Publisher:
ISBN:
Category :
Languages : en
Pages : 224

Book Description


Silicon Carbide Semiconductor Device Fabrication and Characterization

Silicon Carbide Semiconductor Device Fabrication and Characterization PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 35

Book Description
A number of basic building blocks i.e. rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films have been fabricated and characterized. Gold forms a rectifying contact of beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it has been possible to utilize Au contact diodes for electrically characterizing SiC films.

Fabrication and Characterization of Silicon Carbide and Diamond Based Materials and Devices

Fabrication and Characterization of Silicon Carbide and Diamond Based Materials and Devices PDF Author: Kristofer J. Roe
Publisher:
ISBN:
Category : Heterostructures
Languages : en
Pages : 264

Book Description


Computation Assisted Study of Silicon Carbide

Computation Assisted Study of Silicon Carbide PDF Author: Ashutosh Kumar
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
Abstract: Advancement of nuclear power technology has led to the critical questions of detecting emission of harmful radiation and monitoring the exact amount of fissile material present. Thus, finding devices that allow precise detection and monitoring in even the harshest nuclear environment has become one of the key challenges in nuclear energy technology. The detector materials and device structure need to allow fast and accurate measurements at high temperatures as well as survive significant radiation and corrosive environments. While semiconductor based devices fulfill the measurement requirements, current materials (predominantly silicon) are prone to radiation damage and cease functioning at approximately 150 degrees Celsius. Silicon carbide has shown some remarkable properties which can potentially overcome these deficiencies. Among various polytypes of SiC, 4H-SiC exhibits the best electronic properties, possessing a measured electronic mobility of ~1000 cm2/V-s, high thermal conductivity, wide band gap and low leakage current. These properties make it an ideal candidate material for radiation detection applications. This dissertation aimed to develop a 4H-SiC based detector, and demonstrate its function for radiation detection in harsh conditions. This included the development of multi-scale computational modeling that can predict the long-term performance of the detectors in harsh nuclear environments. For this project, we targeted the extreme conditions found in pyroprocessing, a method used to reprocess spent nuclear fuel with potential importance for next-generation power plants. There, nuclear fuel is dissolved in molten salt at processing temperatures of at least 500 degrees Celsius in order to electroplate the radionuclides of interest. While especially the high temperatures limit many design choices for the device structure, we show that a Schottky diode made with 4H-SiC and nickel-based Schottky and ohmic contacts is capable of working at temperatures up to at least 500 degrees Celsius. In order to computationally simulate temperature and irradiation effects, we have developed a novel multiscale modeling methodology consisting of continuum-level simulation of irradiation damage and quantum-mechanical modeling of the effect of damage on the electrical properties of 4H-SiC. This can be combined with device modeling developed by our collaborators to predict the detector operation as a function of environmental conditions. In the quantum mechanical framework of Density Functional Theory, we have developed a novel methodology for calculation of Fermi-level dependent point defect formation energies in multicomponent compounds which allows identifying the most stable and thus predominant point defects. This knowledge is necessary to predict the influence of radiation damage on e.g. the electron mobility. To analyze the effects of the various point defects on the electronic properties relevant for device applications, we have extended the self consistent parameter free electron-mobility model developed by Restrepo et al. for application in 4H-SiC. The mobility results show clearly how different the effect of the varying types of defects is on the mobility. To validate our findings, we have analyzed the potential of electron energy loss spectroscopy as a tool for defect spectroscopy, with combination of modeling and experiments. We have demonstrated that the methodology developed within the scope of this project is applicable to a range of different materials, by applying these methods to InP and LiFePO4. Using the method developed for calculation of the point defect formation energies, we identify most stable native point defects in InP. Using EELS modeling technique, we explain the loss of lithium ions in the aged Li-ion batteries.