Author: Christopher Lyle BorstPublisher:
ISBN:
Category :
Languages : en
Pages : 211
Book Description
Experiments and Mechanistic Models for the Chemical-mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses
Author: Christopher Lyle BorstPublisher:
ISBN:
Category :
Languages : en
Pages : 211
Book Description
Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses
Author: Christopher Lyle BorstPublisher: Springer Science & Business Media
ISBN: 1461511658
Category : Technology & Engineering
Languages : en
Pages : 235
Book Description
As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-kappa dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning.
Chemical Mechanical Polishing 10
Author: G. BanerjeePublisher: The Electrochemical Society
ISBN: 1566777232
Category : Science
Languages : en
Pages : 145
Book Description
The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Chemical Mechanical Polishing 10¿, held during the 215th meeting of The Electrochemical Society, in San Francisco, California from May 24 to 29, 2009.
Dissertation Abstracts International
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 820
Book Description
Catalogus operarum et lectionum classis primae Ilfeldensis litterarum domicilii
Author: Chemical Mechanical Polishing 14
Author: R. RhoadesPublisher: The Electrochemical Society
ISBN: 1607687453
Category : Science
Languages : en
Pages : 93
Book Description
Chemical Mechanical Polishing 9
Author: G. BanerjeePublisher: The Electrochemical Society
ISBN: 1566776295
Category : Science
Languages : en
Pages : 91
Book Description
The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Chemical Mechanical Polishing 9¿, held during the 213th meeting of The Electrochemical Society, in Phoenix, Arizona from May 18-23, 2008.
Nano-scale Scratching in Chemical-mechanical Polishing
Author: Thor EusnerPublisher:
ISBN:
Category :
Languages : en
Pages : 254
Book Description
During the chemical-mechanical polishing (CMP) process, a critical step in the manufacture of ultra-large-scale integrated (ULSI) semiconductor devices, undesirable nano-scale scratches are formed on the surfaces being polished. As the width of the interconnect Cu lines continues to shrink to below 60 nm, and as the traditional Si02 dielectric is replaced by the compliant, lowdielectric-constant materials, scratching has emerged as a challenging problem. This thesis presents a contact mechanics based approach for modeling nano-scale scratching by the hard abrasive particles in the slurry. Single-particle models that use elastic and plastic analyses to determine both the lower- and upper-bounds for the load per particle are introduced. These bounds are established for both homogenous and composite coatings. Multi-particle models are also presented. These models use contact mechanics at the pad-particle-coating interface to relate the global parameters of CMP, such as pressure, particle radius, slurry volume fraction and the material and geometrical properties of the pad and coating, to the widths and depths of scratches in the coatings. A lower- and upper-limit for the scratch width and depth in CMP is defined. Controlled indentation and scratching experiments have been conducted using a Hysitron TriboIndenter to validate the single-particle models. Based on these experiments, the upper-bound load per particle is used to predict the widths and depths of scratches in coatings. Furthermore, polishing experiments have been conducted using a CMP tool to validate the limits. The upper-limit for the semi-width of a scratch is equal to the product of the particle radius and the square root of the ratio of pad hardness to coating hardness. For a typical CMP pad and Cu coating, this upper-limit is one-fifth of the particle radius. Based on the models and the experiments, practical solutions for mitigating scratching in CMP, especially Cu CMP, are suggested.
Chemical-mechanical Polishing
Author: Publisher:
ISBN:
Category : Electrolytic polishing
Languages : en
Pages : 312
Book Description
Author: Dennis Okumu Ouma