Experimental study of anodic SiO2 MOS capacitors PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Experimental study of anodic SiO2 MOS capacitors PDF full book. Access full book title Experimental study of anodic SiO2 MOS capacitors by . Download full books in PDF and EPUB format.
Author: Publisher: ISBN: Category : Languages : en Pages : 46
Book Description
An electrochemical technique has been used to grow anodic silicon dioxide (Si02) films of thicknesses approximatelly between 1245 and 2330 ? on (111) p-type silicon wafers. Some properties of the anodic oxide and the associated Si/anodic Si02 interface have been studied by forming metal-oxide-semiconductor (MOS) capacitors using the anodically grown oxide as the dielectric. The silicon dioxide layer has been grown in an electrolyte of potassium nitrate in ethylene glycol at four different molar concentrations in order to study the surface charge density effects by means of the C-V plot technique. In the course of this work attempting to anodically oxidize single-crystal silicon slices, several technical problems have been encountered. One of the most important of these, was the development of an electrode assembly that would enable the immersion of the silicon anode into the anodizing electrolyte in such a way that the whole wafer would be immersed, but allowing an electrical contact to it with little or no current leakage. Consequently, three different electrode assemblies were used through this work in order to find the most appropriate for the anodic oxidation process. The successful one was en electrode assembly in which a silicon rubber 'O' ring is used to form mechanical pressure sealed insulator to secure the semiconductor anode. Experimental results show that the forming voltage, Vf, during anodic growth of Si02 layers in a non-aqueous electrolyte depends linearly on time. Furthermore, the oxide thickness during the anodization of silicon shows a linear dependence on time as well. By comparing experimental C-V curves with the ideal one, it has been inferred the presence of positive fixed charged centers at the interface of Si/anodic Si02. The generation of these fixed charge centers, Qss, in MOS capacitors depends mainly on the molarity of the electrolyte, and as a second order effect, on the anodizing current used in the anodization process.
Author: Publisher: ISBN: Category : Languages : en Pages : 46
Book Description
An electrochemical technique has been used to grow anodic silicon dioxide (Si02) films of thicknesses approximatelly between 1245 and 2330 ? on (111) p-type silicon wafers. Some properties of the anodic oxide and the associated Si/anodic Si02 interface have been studied by forming metal-oxide-semiconductor (MOS) capacitors using the anodically grown oxide as the dielectric. The silicon dioxide layer has been grown in an electrolyte of potassium nitrate in ethylene glycol at four different molar concentrations in order to study the surface charge density effects by means of the C-V plot technique. In the course of this work attempting to anodically oxidize single-crystal silicon slices, several technical problems have been encountered. One of the most important of these, was the development of an electrode assembly that would enable the immersion of the silicon anode into the anodizing electrolyte in such a way that the whole wafer would be immersed, but allowing an electrical contact to it with little or no current leakage. Consequently, three different electrode assemblies were used through this work in order to find the most appropriate for the anodic oxidation process. The successful one was en electrode assembly in which a silicon rubber 'O' ring is used to form mechanical pressure sealed insulator to secure the semiconductor anode. Experimental results show that the forming voltage, Vf, during anodic growth of Si02 layers in a non-aqueous electrolyte depends linearly on time. Furthermore, the oxide thickness during the anodization of silicon shows a linear dependence on time as well. By comparing experimental C-V curves with the ideal one, it has been inferred the presence of positive fixed charged centers at the interface of Si/anodic Si02. The generation of these fixed charge centers, Qss, in MOS capacitors depends mainly on the molarity of the electrolyte, and as a second order effect, on the anodizing current used in the anodization process.
Author: Gerald Lucovsky Publisher: Elsevier ISBN: 1483162443 Category : Science Languages : en Pages : 382
Book Description
The Physics of MOS Insulators focuses on the experiments, research, and discussions made on MOS insulators. Divided into eight parts and having 72 chapters, the selection features the lengthy literature of contributors in the field of biochemistry who have continuously worked to highlight the structure, properties, applications, processes, experiments, and research done on MOS insulators. Scattered within the numerous chapters of the selection are experiments that are supported by lengthy discussions and data necessary to validate the claims of the authors. Although the chapters cover different topics, generally, they present how MOS insulators have captured the interest of biochemists and other individuals who are interested in this discipline. The papers generally include samples and measurements, observations, discussions, numerical representations, methodologies, conclusions, and recommendations. This book is a dependable source of information for those who are keen enough to study the physics of MOS insulators. This text is highly recommended to biochemists, students, and scholars who find this area of study interesting.
Author: Electrochemical society. Meeting Publisher: The Electrochemical Society ISBN: 1566778654 Category : Science Languages : en Pages : 950
Book Description
This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.
Author: B.E. Deal Publisher: Springer Science & Business Media ISBN: 1489907742 Category : Science Languages : en Pages : 543
Book Description
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Author: Madusudanan Srinivasan Gopalan Publisher: ISBN: Category : Capacitors Languages : en Pages : 62
Book Description
The RADiation sensitive Field Effect Transistor (RADFET) has been conventionally used to measure radiation dose levels. These dose sensors are calibrated in such a way that a shift in threshold voltage, due to a build-up of oxide-trapped charge, can be used to estimate the radiation dose. In order to estimate the radiation dose level using RADFET, a wired readout circuit is necessary. Using the same principle of oxide-trapped charge build-up, but by monitoring the change in capacitance instead of threshold voltage, a wireless dose sensor can be developed. This RADiation sensitive CAPacitor (RADCAP) mounted on a resonant patch antenna can then become a wireless dose sensor. From the resonant frequency, the capacitance can be extracted which can be mapped back to estimate the radiation dose level. The capacitor acts as both radiation dose sensor and resonator element in the passive antenna loop. Since the MOS capacitor is used in passive state, characterizing various parameters that affect the radiation sensitivity is essential. Oxide processing technique, choice of insulator material, and thickness of the insulator, critically affect the dose response of the sensor. A thicker oxide improves the radiation sensitivity but reduces the dynamic range of dose levels for which the sensor can be used. The oxide processing scheme primarily determines the interface trap charge and oxide-trapped charge development; controlling this parameter is critical to building a better dose sensor.
Author: R. Ekwal Sah Publisher: The Electrochemical Society ISBN: 1566777100 Category : Dielectric films Languages : en Pages : 871
Book Description
The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
Author: 
Author: 
Author: Gerald Lucovsky
Author: Electrochemical society. Meeting
Author: Karl Harry Zaininger
Author: B.E. Deal
Author: Madusudanan Srinivasan Gopalan
Author: Hisham Z. Massoud
Author: 
Author: R. Ekwal Sah
Author: