Experimental Investigation of Beryllium-based Multilayer Coatings for Extreme Ultraviolet Lithography PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
The performance of beryllium-based multilayer coatings designed to reflect light of wavelengths near 11 nm, at normal incidence, is presented. These multilayer coatings are of special interest for extreme ultraviolet lithography (EUVL). The beryllium-based multilayers investigated were Mo/Be, Ru/Be and a new material combination Mo, CiBe. The highest reflectivity achieved so far is 70% at 11.3 mn with 70 bilayers of Mo/Be. However, even though high reflectivity is very important, there are other parameters to satisfy the requirements for an EUVL production tool. Multilayer stress, thermal stability, radiation stability and long term reflectance stability are of equal or greater importance. An experimental characterization of several coatings was carried out to determine the reflectivity, stress, microstructure, and long term stability of these coatings. Theoretically calculated reflectivities are compared with experimental results for different material pairs; differences between experimental and theoretical reflectivities and bandwidths are addressed. Keywords: Extreme ultraviolet (EUV) lithography, reflective coatings, multilayer deposition, beryllium.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
The performance of beryllium-based multilayer coatings designed to reflect light of wavelengths near 11 nm, at normal incidence, is presented. These multilayer coatings are of special interest for extreme ultraviolet lithography (EUVL). The beryllium-based multilayers investigated were Mo/Be, Ru/Be and a new material combination Mo, CiBe. The highest reflectivity achieved so far is 70% at 11.3 mn with 70 bilayers of Mo/Be. However, even though high reflectivity is very important, there are other parameters to satisfy the requirements for an EUVL production tool. Multilayer stress, thermal stability, radiation stability and long term reflectance stability are of equal or greater importance. An experimental characterization of several coatings was carried out to determine the reflectivity, stress, microstructure, and long term stability of these coatings. Theoretically calculated reflectivities are compared with experimental results for different material pairs; differences between experimental and theoretical reflectivities and bandwidths are addressed. Keywords: Extreme ultraviolet (EUV) lithography, reflective coatings, multilayer deposition, beryllium.
Author: Vivek Bakshi Publisher: SPIE Press ISBN: 0819469645 Category : Art Languages : en Pages : 704
Book Description
Editorial Review Dr. Bakshi has compiled a thorough, clear reference text covering the important fields of EUV lithography for high-volume manufacturing. This book has resulted from his many years of experience in EUVL development and from teaching this subject to future specialists. The book proceeds from an historical perspective of EUV lithography, through source technology, optics, projection system design, mask, resist, and patterning performance, to cost of ownership. Each section contains worked examples, a comprehensive review of challenges, and relevant citations for those who wish to further investigate the subject matter. Dr. Bakshi succeeds in presenting sometimes unfamiliar material in a very clear manner. This book is also valuable as a teaching tool. It has become an instant classic and far surpasses others in the EUVL field. --Dr. Akira Endo, Chief Development Manager, Gigaphoton Inc. Description Extreme ultraviolet lithography (EUVL) is the principal lithography technology aiming to manufacture computer chips beyond the current 193-nm-based optical lithography, and recent progress has been made on several fronts: EUV light sources, optics, optics metrology, contamination control, masks and mask handling, and resists. This comprehensive volume is comprised of contributions from the world's leading EUVL researchers and provides all of the critical information needed by practitioners and those wanting an introduction to the field. Interest in EUVL technology continues to increase, and this volume provides the foundation required for understanding and applying this exciting technology. About the editor of EUV Lithography Dr. Vivek Bakshi previously served as a senior member of the technical staff at SEMATECH; he is now president of EUV Litho, Inc., in Austin, Texas.
Author: Publisher: ISBN: Category : Languages : en Pages : 6
Book Description
The need for normal incidence mirrors maintaining reflectivity greater than 60% for an industrially competitive Extreme Ultraviolet Lithography (EUV) system has been well documented. The Molybdenum/Silicon system has emerged as the de-facto standard, where researchers are now routinely fabricating mirrors demonstrating 63% reflectivity near 130 Angstroms. However, multilayer mirrors using beryllium as the low atomic number (low-Z) spacer could potentially show similar or better reflectivity, and operate at wavelengths down to the beryllium K-edge at 111 Angstroms. Besides offering potentially greater reflectivity, the shorter wavelength light offers increased dissolution depth in photoresists, and offers potentially better resolution and depth of focus. We will report our latest results from beryllium based multilayers. The mirrors were fabricated at the Lawrence Livermore National Laboratory (LLNL) and tested at the Center for X-Ray Optics at Lawrence Berkeley Laboratory (CXRO/LBL).
Author: Kouichi Tsuji Publisher: John Wiley & Sons ISBN: 0470020423 Category : Science Languages : en Pages : 616
Book Description
X-Ray Spectrometry: Recent Technological Advances covers the latest developments and areas of research in the methodological and instrumental aspects of x-ray spectrometry. Includes the most advanced and high-tech aspects of the chemical analysis techniques based on x-rays Introduces new types of X-ray optics and X-ray detectors, covering history, principles, characteristics and future trends Written by internationally recognized scientists, all of whom are eminent specialists in each of the sub-fields Sections include: X-Ray Sources, X-Ray Optics, X-Ray Detectors, Special Configurations, New Computerization Methods, New Applications This valuable book will assist all analytical chemists and other users of x-ray spectrometry to fully exploit the capabilities of this set of powerful analytical tools and to further expand applications in such fields as material and environmental sciences, medicine, toxicology, forensics, archaeometry and many others.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
Extreme Ultraviolet Lithography (EUVL) is a candidate for future application by the semiconductor industry in the production of sub-100 nm feature sizes in integrated circuits. Using multilayer reflective coatings optimized at wavelengths ranging from 11 to 14 nm, EUVL represents a potential successor to currently existing optical lithography techniques. In order to assess lifetimes of the multilayer coatings under realistic conditions, a series of radiation stability tests has been performed. In each run a dose of EUV radiation equivalent to several months of lithographic operation was applied to Mo/Si and MO/Be multilayer coatings within a few days. Depending on the residual gas concentration in the vacuum environment, surface deposition of carbon during the exposure lead to losses in the multilayer reflectivity. However, in none of the experimental runs was structural damage within the bulk of the multilayers observed. Mo/Si multilayer coatings recovered their full original reflectivity after removal of the carbon layer by an ozone cleaning method. Auger depth profiling on MO/Be multilayers indicate that carbon penetrated into the Be top layer during illumination with high doses of EUV radiation. Subsequent ozone cleaning fully removed the carbon, but revealed enhanced oxidation of the area illuminated, which led to an irreversible loss in reflectance on the order of 1%. Keywords: Extreme ultraviolet (EUV) lithography, multilayer reflective coatings, radiation stability, surface contamination.
Author: Publisher: ISBN: Category : Optical instruments Languages : en Pages : 510
Book Description
Publishes papers reporting on research and development in optical science and engineering and the practical applications of known optical science, engineering, and technology.
Author: Piero Pianetta Publisher: Springer ISBN: 9781563969416 Category : Medical Languages : en Pages : 520
Book Description
This conference presents invited and contributed papers by international experts devoted to explosive phenomena in cosmic settings as diverse as stellar flares, X-ray bursts, jets, novae, supernovae, hypernovae, and gamma-ray bursts. The conference considered not only the origins of explosive behavior, but also information about the host systems that the explosive phenomena might yield. For example, X-ray bursts can be used to determine structural parameters of neutron stars, and specific types of supernovae can be used as standard candles to study the deceleration of the Hubble expansion.
Author: Libor Juha Publisher: SPIE-International Society for Optical Engineering ISBN: Category : Science Languages : en Pages : 246
Book Description
Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
Synchrotron-based reflectometry is an important technique for the precise determination of optical properties of reflective multilayer coatings for Extreme Ultraviolet Lithography (EUVL). Multilayer coatings enable normal incidence reflectances of more than 65% in the wavelength range between 11 and 15 nm. In order to achieve high resolution and throughput of EUVL systems, stringent requirements not only apply to their mechanical and optical layout, but also apply to the optical properties of the multilayer coatings. Therefore, multilayer deposition on near-normal incidence optical surfaces of projection optics, condenser optics and reflective masks requires suitable high-precision metrology. Most important, due to their small bandpass on the order of only 0.5 nm, all reflective multilayer coatings in EUVL systems must be wavelength-matched to within "0.05 nm. In some cases, a gradient of the coating thickness is necessary for wavelength matching at variable average angle of incidence in different locations on the optical surfaces. Furthermore, in order to preserve the geometrical figure of the optical substrates, reflective multilayer coatings need to be uniform to within 0.01 nm in their center wavelength. This requirement can only be fulfilled with suitable metrology, which provides a precision of a fraction of this value. In addition, for the detailed understanding and the further development of reflective multilayer coatings a precision in the determination of peak reflectances is desirable on the order of 0.1%. Substrates up to 200 mm in diameter and 15 kg in mass need to be accommodated. Above requirements are fulfilled at beamline 6.3.2 of the Advanced Light Source (ALS) in Berkeley. This beamline proved to be precise within 0.2% (ms) for reflectance and 0.002 nm (rms) for wavelength.
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