Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Excitons in van der Waals heterostructures - a theoretical study
Author: Excitons in Van Der Waals Heterostructures
Author: Simone LatiniExploring excitons in van der waals heterostructures and theie potential for lasing
Author: Van der Waals Heterostructures
Author: Zheng ZhangPublisher: John Wiley & Sons
ISBN: 3527349502
Category : Technology & Engineering
Languages : en
Pages : 340
Book Description
Van der Waals Heterostructures A comprehensive resource systematically detailing the developments and applications of van der Waals heterostructures and devices Van der Waals Heterostructures is essential reading to understand the developments made in van der Waals heterostructures and devices in all aspects, from basic synthesis to physical analysis and heterostructures assembling to devices applications, including demonstrated applications of van der Waals heterostructure on electronics, optoelectronics, and energy conversion, such as solar energy, hydrogen energy, batteries, catalysts, biotechnology, and more. This book starts from an in-depth introduction of van der Waals interactions in layered materials and the forming of mixed-dimensional heterostructures via van der Waals force. It then comprehensively summarizes the synthetic methods, devices building processes and physical mechanism of 2D van der Waals heterostructures, and devices including 2D-2D electronics, 2D-2D optoelectronics, and mixed dimensional van der Waals heterostructures. In Van der Waals Heterostructures, readers can expect to find specific information on: The current library of 2D semiconductors and the current synthesis and performances of 2D semiconductors Controllable synthesis and assemble van der Waals heterostructures, physics of the van der Waals interface, and multi-field coupling effects 2D-2D electronics, 2D-2D optoelectronics, mixed dimensional van der Waals heterostructures, and van der Waals heterostructure applications on energy conversion Insight into future perspectives of the van der Waals heterostructures and devices with the detailed effective role of 2D materials for integrated electrical and electronic equipment
2D Materials
Author: Phaedon AvourisPublisher: Cambridge University Press
ISBN: 1316738132
Category : Technology & Engineering
Languages : en
Pages : 521
Book Description
Learn about the most recent advances in 2D materials with this comprehensive and accessible text. Providing all the necessary materials science and physics background, leading experts discuss the fundamental properties of a wide range of 2D materials, and their potential applications in electronic, optoelectronic and photonic devices. Several important classes of materials are covered, from more established ones such as graphene, hexagonal boron nitride, and transition metal dichalcogenides, to new and emerging materials such as black phosphorus, silicene, and germanene. Readers will gain an in-depth understanding of the electronic structure and optical, thermal, mechanical, vibrational, spin and plasmonic properties of each material, as well as the different techniques that can be used for their synthesis. Presenting a unified perspective on 2D materials, this is an excellent resource for graduate students, researchers and practitioners working in nanotechnology, nanoelectronics, nanophotonics, condensed matter physics, and chemistry.
Interlayer Excitons and Polaritons in Atomically Thin Van Der Waals Heterostructures
Author: Charalambos LoucaPublisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
This note is part of Quality testing.
Interlayer Excitons in Twisted Van Der Waals Heterostructures
Author: Junho ChoiPublisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Van der Waals (vdW) heterostructures represent a promising material platform with rich electronic and optical properties highly tunable via a wide selection of layer materials, electric doping, strain, and twist angle. Monolayers of transition metal dichalcogenide (TMD) semiconductors commonly show strong light-matter coupling and direct bandgaps from the infrared to the visible spectral range, making them promising candidates for various optoelectronic applications. Vertically stacking different TMD monolayers allows one to create TMD heterostructures with rich and tunable correlated electronic phases and optical properties. Among different methods to tune the properties of vdW heterostructures, the twist angle is the most unique parameter. In this dissertation, we investigated the twist angle dependent optical properties of interlayer excitons in TMD heterostructures. First, we studied the twist-angle dependent interlayer exciton lifetimes in MoSe2/WSe2 heterostructures. We found that the multiple resonances of interlayer excitons subject to strong confinement in the moiré potential. Their properties are consistent with the interpretation that these resonances are ground- and excited state excitons. Our experiments further revealed that the recombination dynamics of interlayer excitons depends strongly on the twist angle. For example, their lifetimes change from ~ 1 ns to hundreds of ns when the twist angle is increased from 1 to 3.5°. In collaboration with a theoretical group, we explored two mechanisms for this drastic dependence. First, a relative rotation between the two layers in real space translates to a rotation in the momentum space. As the twist angle is increased, the interlayer exciton transitions change from direct- to indirect transitions in the momentum spacing, leading to a longer lifetime. Second, the presence of moiré potential also has a significant impact on the lifetime, reducing its angle dependence by relaxing the requirement of momentum conservation. Next, we investigated the influence of moiré potential on interlayer exciton diffusion in MoSe2/WSe2 heterostructures. The interlayer exciton diffusion offers a unique channel of energy and information transport in TMD heterostructures. While early studies focused on how mobile excitons are in TMD heterostructures, we find that interlayer exciton diffusion is impeded in the presence of the moiré potential by comparing two types of samples: those prepared by mechanical exfoliation and those grown with chemical vapor deposition. We investigated multiple mechanically stacked samples with accurately controlled twist-angles. We showed that the interlayer exciton diffusion does not depend on the size of the moiré supercell in a simple and monotonic manner. These experiments provide an important and complementary view of the diffusion properties of interlayer excitons from those reported in the literature
Excitons in Transition Metal Dichalcogenide Van Waals Heterostructures
Author: Erica CalmanPublisher:
ISBN:
Category :
Languages : en
Pages : 53
Book Description
Excitons are quasi-partciles consisting of an electro-statically bound electron and hole which have long been observed in semiconducting and insulating materials. A spatially indirect exciton (IX) is an exciton in which the electron and the hole are spatially separated. This is achieved through the use of a static electric field and engineered semiconductor heterosteructures. Indirect excitons interact with one another and can effeciently re-radiate, so they provide a means for light to interact with light in solid media, and can thus be used for ecient optical signal processing. However, the most common material for studying indirect excitons (GaAs) cannot support excitons at temperatures above ~ 100 K. This limitation, due to hermal fluctuations having enough energy to cause exciton dissocation prevents the creation of practical devices for excitonic signal processing. This dissertation demonstrates an increase in the binding energy and thus operating temperature of indirect excitons by utelizing van der Waals transition metal dichalcogenide heterostructures. These atomically thin materials have binding energies on the order of 0:5 eV which support excitons at 300 K.
Quantum Theory of the Optical and Electronic Properties of Semiconductors
Author: Hartmut HaugPublisher: World Scientific
ISBN: 9789810218645
Category : Science
Languages : en
Pages : 496
Book Description
This textbook presents the basic elements needed to understand and engage in research in semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. The fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, optical Stark effect, semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects are covered. The material is presented in sufficient detail for graduate students and researchers who have a general background in quantum mechanics.
The Physics of Semiconductors
Author: Marius GrundmannPublisher: Springer Nature
ISBN: 3030515699
Category : Technology & Engineering
Languages : en
Pages : 905
Book Description
The 4th edition of this highly successful textbook features copious material for a complete upper-level undergraduate or graduate course, guiding readers to the point where they can choose a specialized topic and begin supervised research. The textbook provides an integrated approach beginning from the essential principles of solid-state and semiconductor physics to their use in various classic and modern semiconductor devices for applications in electronics and photonics. The text highlights many practical aspects of semiconductors: alloys, strain, heterostructures, nanostructures, amorphous semiconductors, and noise, which are essential aspects of modern semiconductor research but often omitted in other textbooks. This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. The text derives explicit formulas for many results to facilitate a better understanding of the topics. Having evolved from a highly regarded two-semester course on the topic, The Physics of Semiconductors requires little or no prior knowledge of solid-state physics. More than 2100 references guide the reader to historic and current literature including original papers, review articles and topical books, providing a go-to point of reference for experienced researchers as well.