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Author: Golla Eranna Publisher: CRC Press ISBN: 1482232812 Category : Science Languages : en Pages : 432
Book Description
Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.
Author: Golla Eranna Publisher: CRC Press ISBN: 1482232812 Category : Science Languages : en Pages : 432
Book Description
Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.
Author: Ahmed Belasri Publisher: Springer Nature ISBN: 9811554447 Category : Technology & Engineering Languages : en Pages : 659
Book Description
This book highlights peer reviewed articles from the 1st International Conference on Renewable Energy and Energy Conversion, ICREEC 2019, held at Oran in Algeria. It presents recent advances, brings together researchers and professionals in the area and presents a platform to exchange ideas and establish opportunities for a sustainable future. Topics covered in this proceedings, but not limited to, are photovoltaic systems, bioenergy, laser and plasma technology, fluid and flow for energy, software for energy and impact of energy on the environment.
Author: John Wilfred Orton Publisher: ISBN: 0199695822 Category : Science Languages : en Pages : 529
Book Description
The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early 'home-made' variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called 'low-dimensional structures' (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Author: Christophe Jean Delerue Publisher: Springer Science & Business Media ISBN: 3662089033 Category : Technology & Engineering Languages : en Pages : 313
Book Description
Provides the theoretical background needed by physicists, engineers and students to simulate nano-devices, semiconductor quantum dots and molecular devices. It presents in a unified way the theoretical concepts, the more recent semi-empirical and ab initio methods, and their application to experiments. The topics include quantum confinement, dielectric and optical properties, non-radiative processes, defects and impurities, and quantum transport. This guidebook not only provides newcomers with an accessible overview (requiring only basic knowledge of quantum mechanics and solid-state physics) but also provides active researchers with practical simulation tools.
Author: Aziz Belmiloudi Publisher: BoD – Books on Demand ISBN: 9533072261 Category : Science Languages : en Pages : 670
Book Description
Over the past few decades there has been a prolific increase in research and development in area of heat transfer, heat exchangers and their associated technologies. This book is a collection of current research in the above mentioned areas and discusses experimental, theoretical and calculation approaches and industrial utilizations with modern ideas and methods to study heat transfer for single and multiphase systems. The topics considered include various basic concepts of heat transfer, the fundamental modes of heat transfer (namely conduction, convection and radiation), thermophysical properties, condensation, boiling, freezing, innovative experiments, measurement analysis, theoretical models and simulations, with many real-world problems and important modern applications. The book is divided in four sections : "Heat Transfer in Micro Systems", "Boiling, Freezing and Condensation Heat Transfer", "Heat Transfer and its Assessment", "Heat Transfer Calculations", and each section discusses a wide variety of techniques, methods and applications in accordance with the subjects. The combination of theoretical and experimental investigations with many important practical applications of current interest will make this book of interest to researchers, scientists, engineers and graduate students, who make use of experimental and theoretical investigations, assessment and enhancement techniques in this multidisciplinary field as well as to researchers in mathematical modelling, computer simulations and information sciences, who make use of experimental and theoretical investigations as a means of critical assessment of models and results derived from advanced numerical simulations and improvement of the developed models and numerical methods.
Author: Jean Daillant Publisher: Springer Science & Business Media ISBN: 3540486968 Category : Science Languages : en Pages : 347
Book Description
The reflection of and neutrons from surfaces has existed as an x-rays exp- imental for almost it is in the last technique fifty Nevertheless, only years. decade that these methods have become as of enormously popular probes This the surfaces and interfaces. to be due to of several appears convergence of intense different circumstances. These include the more n- availability be measured orders tron and sources that can over (so reflectivity x-ray many of and the much weaker surface diffuse can now also be magnitude scattering of thin films and studied in some the detail); growing importance multil- basic the realization of the ers in both and technology research; important which in the of surfaces and and role roughness plays properties interfaces; the of statistical models to characterize the of finally development topology its and its characterization from on roughness, dependence growth processes The of and to surface scattering experiments. ability x-rays neutro4s study four five orders of in scale of surfaces over to magnitude length regardless their and also their to ability probe environment, temperature, pressure, etc. , makes these the choice for buried interfaces often probes preferred obtaining information about the microstructure of often in statistical a global surfaces, the local This is manner to complementary imaging microscopy techniques, of such studies in the literature witnessed the veritable by explosion published the last few Thus these lectures will useful for over a resource years.
Author: Jean-Marie Basset Publisher: John Wiley & Sons ISBN: 3527627103 Category : Science Languages : en Pages : 725
Book Description
Covering everything from the basics to recent applications, this monograph represents an advanced overview of the field. Edited by internationally acclaimed experts respected throughout the community, the book is clearly divided into sections on fundamental and applied surface organometallic chemistry. Backed by numerous examples from the recent literature, this is a key reference for all chemists.
Author: Juin Jei Liou Publisher: Springer Science & Business Media ISBN: 9780412146015 Category : Science Languages : en Pages : 372
Book Description
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Author: Golla Eranna
Author: Golla Eranna
Author: Ahmed Belasri
Author: John Wilfred Orton
Author: Christophe Jean Delerue
Author: J. A. Reissland
Author: Ramón Compañó
Author: Aziz Belmiloudi
Author: Jean Daillant
Author: Jean-Marie Basset
Author: Juin Jei Liou