Etching of SiO Sub 2 Film by Synchrotron Radiation in Hydrogen and Its Application to Low-Temperature Surface Cleaning PDF Download
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Author: Yasuo Nara Publisher: ISBN: Category : Languages : en Pages : 4
Book Description
In order to grow silicon films with good crystal quality, it is important to remove oxygen and carbon contaminants on the surface and to obtain clean substrate surface immediately before growth. In conventional surface cleaning process, silicon substrate is heated up to about 1000 deg C and the surface contaminants are evaporated or gas-etched from the substrate surface. However, such high temperature treatment causes the redistribution of impurity atoms in the substrates and it makes difficult to fabricate fine structures. Recently, synchrotron radiation (SR) stimulated evaporation of SiO2 film and its application to surface cleaning at 650 deg C have been reported, and the usefulness of SR induced reactions for low-temperature process is being recognized. In this paper, we report on new SiO2 etching technique by the irradiation of SR in H2 atmosphere and on the application of this process to the pretreatment of Si film deposition. It is revealed that the addition of H2 gas during SR exposure is effective to increase the SiO2 etching rate and to reduce the carbon contamination on the Si substrate at low-temperature of 500 deg C.
Author: Yasuo Nara Publisher: ISBN: Category : Languages : en Pages : 4
Book Description
In order to grow silicon films with good crystal quality, it is important to remove oxygen and carbon contaminants on the surface and to obtain clean substrate surface immediately before growth. In conventional surface cleaning process, silicon substrate is heated up to about 1000 deg C and the surface contaminants are evaporated or gas-etched from the substrate surface. However, such high temperature treatment causes the redistribution of impurity atoms in the substrates and it makes difficult to fabricate fine structures. Recently, synchrotron radiation (SR) stimulated evaporation of SiO2 film and its application to surface cleaning at 650 deg C have been reported, and the usefulness of SR induced reactions for low-temperature process is being recognized. In this paper, we report on new SiO2 etching technique by the irradiation of SR in H2 atmosphere and on the application of this process to the pretreatment of Si film deposition. It is revealed that the addition of H2 gas during SR exposure is effective to increase the SiO2 etching rate and to reduce the carbon contamination on the Si substrate at low-temperature of 500 deg C.
Author: Joshua David Barclay Publisher: ISBN: Category : Deuterium oxide Languages : en Pages : 52
Book Description
An environmentally friendly, and contamination free process for etching and cleaning semiconductors is critical to future of the IC industry. Under the right conditions, water has the ability to meet these requirements. Water becomes more reactive as a function of temperature in part because the number of hydronium and hydroxyl ions increase. As water approaches its boiling point, the concentration of these species increases over seven times their concentrations at room temperature. At 150 °C, when the liquid state is maintained, these concentrations increase 15 times over room temperature. Due to its enhanced reactivity, high temperature water (HTW) has been studied as an etch and clean of thermally grown SiO2, Si3N4, and low-k films. High temperature deuterium oxide (HT-D2O) behaves similarly to HTW; however, it dissociates an order of magnitude less than HTW resulting in an equivalent reduction in reactive species. This allowed for the effects of reactive specie concentration on etch rate to be studied, providing valuable insight into how HTW compares to other high temperature wet etching processes such as hot phosphoric acid (HPA). Characterization was conducted using Fourier transform infrared spectroscopy (FTIR) to determine chemical changes due to etching, spectroscopic ellipsometry to determine film thickness, profilometry to measure thickness change across the samples, scanning electron microscopy (SEM), contact angle to measure changes in wetting behavior, and UV-Vis spectroscopy to measure dissolved silica in post etch water. HTW has demonstrated the ability to effective etch both SiO2 and Si3N4, HT-D2O also showed similar etch rates of Si3N4 indicating that a threshold reactive specie concentration is needed to maximize etch rate at a given temperature and additional reactive species do not further increase the etch rate. Because HTW has no hazardous byproducts, high temperature water could become a more environmentally friendly etchant of SiO2 and Si3N4 thin films.
Author: Yasuo Nara
Author: Yasuo Nara
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Author: Joshua David Barclay
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Author: Shuangying Yu
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