Equipment Model for the Low Pressure Chemical Vapor Deposition of Polysilicon PDF Download
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Author: George Henry Prueger Publisher: ISBN: Category : Languages : en Pages : 178
Book Description
An equipment model has been developed for the low pressure chemical vapor deposition (LPCVD) of polycrystalline silicon in a horizontal tube furnace. The model predicts the wafer-to-wafer deposition rate down the length of the tube. Inputs to the model include: silane flow rates from three injectors, injector locations, locations of and temperatures at three thermocouples, operating pressure, the number of wafers, wafer diameter, the location of the wafer load, and other physical dimensions of the furnace such as tube length and inner diameter. The model is intended to aid the process engineer in the operation of equipment, including the selection of optimum process parameters and process control based on measured deposition thickness. The model is also flexible enough to aid in the design of new equipment. The one dimensional finite difference model encompasses the convective and diffusive fluxes of silane and hydrogen in the annular space between the wafer load and tube walls. The reaction of silane is modeled with full account taken of the generation and transport of hydrogen. Kinetic and injection parameters in the model were calibrated using a series of nine statistically designed experiments which varied four parameters over three levels. The model accurately predicts the axial deposition profile over the full range of experimentation and demonstrates good extrapolation beyond the range of experimental calibration. The model was used to predict a set of process parameters that would result in the least variation of deposition rate down the tube. Keywords: Semiconductors.
Author: George Henry Prueger Publisher: ISBN: Category : Languages : en Pages : 178
Book Description
An equipment model has been developed for the low pressure chemical vapor deposition (LPCVD) of polycrystalline silicon in a horizontal tube furnace. The model predicts the wafer-to-wafer deposition rate down the length of the tube. Inputs to the model include: silane flow rates from three injectors, injector locations, locations of and temperatures at three thermocouples, operating pressure, the number of wafers, wafer diameter, the location of the wafer load, and other physical dimensions of the furnace such as tube length and inner diameter. The model is intended to aid the process engineer in the operation of equipment, including the selection of optimum process parameters and process control based on measured deposition thickness. The model is also flexible enough to aid in the design of new equipment. The one dimensional finite difference model encompasses the convective and diffusive fluxes of silane and hydrogen in the annular space between the wafer load and tube walls. The reaction of silane is modeled with full account taken of the generation and transport of hydrogen. Kinetic and injection parameters in the model were calibrated using a series of nine statistically designed experiments which varied four parameters over three levels. The model accurately predicts the axial deposition profile over the full range of experimentation and demonstrates good extrapolation beyond the range of experimental calibration. The model was used to predict a set of process parameters that would result in the least variation of deposition rate down the tube. Keywords: Semiconductors.
Author: Publisher: Academic Press ISBN: 008057582X Category : Technology & Engineering Languages : en Pages : 447
Book Description
Materials processing and manufacturing are fields of growing importance whereby transport phenomena play a central role in many of the applications. This volume is one of the first collections of contributions on thesubject. The five papers cover a wide variety of applications
Author: Ted Kamins Publisher: Springer Science & Business Media ISBN: 1461555779 Category : Technology & Engineering Languages : en Pages : 391
Book Description
Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries.
Author: George Henry Prueger
Author: George Henry Prueger
Author: Gary L. Allman
Author: Jianwen Zhu
Author: Sabine Le Marquis
Author: Hemlock Semiconductor Corporation
Author: 
Author: 
Author: Ted Kamins
Author: Vaughn E. Akins
Author: