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Book Description
CE TRAVAIL A PORTE SUR LA CROISSANCE EPITAXIALE DES NITRURES D'ELEMENTS III GAN, ALN, ET INN, EN UTILISANT L'EPITAXIE PAR JETS MOLECULAIRES ASSISTEE PAR PLASMA D'AZOTE. NOUS AVONS OPTIMISE LES PREMIERS STADES DE LA CROISSANCE DE GAN OU ALN SUR SUBSTRAT AL#2O#3 (0001). LE PROCESSUS UTILISE CONSISTE A NITRURER LA SURFACE DU SUBSTRAT A L'AIDE DU PLASMA D'AZOTE, AFIN DE LA TRANSFORMER EN ALN, PUIS A FAIRE CROITRE UNE COUCHE TAMPON D'ALN OU DE GAN A BASSE TEMPERATURE, AVANT DE REPRENDRE LA CROISSANCE DE GAN OU ALN A HAUTE TEMPERATURE (680 A 750C). NOUS AVONS EN PARTICULIER ETUDIE LES PROPRIETES D'UNE COUCHE DE GAN EN FONCTION DE LA TEMPERATURE A LAQUELLE EST REALISEE L'ETAPE DE NITRURATION. LORSQUE LES CONDITIONS DE DEMARRAGE DE LA CROISSANCE SONT OPTIMISEES, NOUS AVONS PU OBSERVER DES OSCILLATIONS DE RHEED PENDANT LA CROISSANCE DE LA COUCHE DE GAN. NOUS AVONS ETUDIE L'EFFET DU RAPPORT V/III SUR LA MORPHOLOGIE DE SURFACE ET LES PROPRIETES OPTIQUES ET STRUCTURALES DE CETTE COUCHE. NOUS AVONS PROPOSE L'UTILISATION DE L'INDIUM EN TANT QUE SURFACTANT POUR AMELIORER CES PROPRIETES. NOUS AVONS ENSUITE ABORDE LA REALISATION DE SUPERRESEAUX GAN/ALN DONT NOUS AVONS OPTIMISE LES INTERFACES. LES MECANISMES DE RELAXATION DES CONTRAINTES DE ALN SUR GAN ET GAN SUR ALN ONT ETE ETUDIES. NOUS AVONS EGALEMENT ELABORE LES ALLIAGES ALGAN ET INGAN, COMME BARRIERES QUANTIQUES DANS LES HETEROSTRUCTURES. NOUS AVONS MONTRE QUE LA RELAXATION ELASTIQUE DES CONTRAINTES DE GAN EN EPITAXIE SUR ALN DONNE LIEU A LA FORMATION D'ILOTS DE TAILLES NANOMETRIQUES, QUI SE COMPORTENT COMME DES BOITES QUANTIQUES. LEUR DENSITE ET LEUR TAILLE DEPENDENT DE LA TEMPERATURE DE CROISSANCE, ET DES CONDITIONS DE MURISSEMENT APRES CROISSANCE. LES PROPRIETES OPTIQUES DE CES ILOTS SONT GOUVERNEES A LA FOIS PAR LES EFFETS DE CONFINEMENT QUANTIQUE ET PAR LE FORT CHAMP PIEZO-ELECTRIQUE INDUIT PAR LA CONTRAINTE DANS LES ILOTS.
Book Description
CE TRAVAIL A PORTE SUR LA CROISSANCE EPITAXIALE DES NITRURES D'ELEMENTS III GAN, ALN, ET INN, EN UTILISANT L'EPITAXIE PAR JETS MOLECULAIRES ASSISTEE PAR PLASMA D'AZOTE. NOUS AVONS OPTIMISE LES PREMIERS STADES DE LA CROISSANCE DE GAN OU ALN SUR SUBSTRAT AL#2O#3 (0001). LE PROCESSUS UTILISE CONSISTE A NITRURER LA SURFACE DU SUBSTRAT A L'AIDE DU PLASMA D'AZOTE, AFIN DE LA TRANSFORMER EN ALN, PUIS A FAIRE CROITRE UNE COUCHE TAMPON D'ALN OU DE GAN A BASSE TEMPERATURE, AVANT DE REPRENDRE LA CROISSANCE DE GAN OU ALN A HAUTE TEMPERATURE (680 A 750C). NOUS AVONS EN PARTICULIER ETUDIE LES PROPRIETES D'UNE COUCHE DE GAN EN FONCTION DE LA TEMPERATURE A LAQUELLE EST REALISEE L'ETAPE DE NITRURATION. LORSQUE LES CONDITIONS DE DEMARRAGE DE LA CROISSANCE SONT OPTIMISEES, NOUS AVONS PU OBSERVER DES OSCILLATIONS DE RHEED PENDANT LA CROISSANCE DE LA COUCHE DE GAN. NOUS AVONS ETUDIE L'EFFET DU RAPPORT V/III SUR LA MORPHOLOGIE DE SURFACE ET LES PROPRIETES OPTIQUES ET STRUCTURALES DE CETTE COUCHE. NOUS AVONS PROPOSE L'UTILISATION DE L'INDIUM EN TANT QUE SURFACTANT POUR AMELIORER CES PROPRIETES. NOUS AVONS ENSUITE ABORDE LA REALISATION DE SUPERRESEAUX GAN/ALN DONT NOUS AVONS OPTIMISE LES INTERFACES. LES MECANISMES DE RELAXATION DES CONTRAINTES DE ALN SUR GAN ET GAN SUR ALN ONT ETE ETUDIES. NOUS AVONS EGALEMENT ELABORE LES ALLIAGES ALGAN ET INGAN, COMME BARRIERES QUANTIQUES DANS LES HETEROSTRUCTURES. NOUS AVONS MONTRE QUE LA RELAXATION ELASTIQUE DES CONTRAINTES DE GAN EN EPITAXIE SUR ALN DONNE LIEU A LA FORMATION D'ILOTS DE TAILLES NANOMETRIQUES, QUI SE COMPORTENT COMME DES BOITES QUANTIQUES. LEUR DENSITE ET LEUR TAILLE DEPENDENT DE LA TEMPERATURE DE CROISSANCE, ET DES CONDITIONS DE MURISSEMENT APRES CROISSANCE. LES PROPRIETES OPTIQUES DE CES ILOTS SONT GOUVERNEES A LA FOIS PAR LES EFFETS DE CONFINEMENT QUANTIQUE ET PAR LE FORT CHAMP PIEZO-ELECTRIQUE INDUIT PAR LA CONTRAINTE DANS LES ILOTS.
Author: Dnyaneshwar Patil Publisher: BoD – Books on Demand ISBN: 9535105493 Category : Technology & Engineering Languages : en Pages : 392
Book Description
This book represents a unique collection of the latest developments in the rapidly developing world of semiconductor laser diode technology and applications. An international group of distinguished contributors have covered particular aspects and the book includes optimization of semiconductor laser diode parameters for fascinating applications. This collection of chapters will be of considerable interest to engineers, scientists, technologists and physicists working in research and development in the field of semiconductor laser diode, as well as to young researchers who are at the beginning of their career.
Author: Ahmed Belasri Publisher: Springer Nature ISBN: 9811554447 Category : Technology & Engineering Languages : en Pages : 659
Book Description
This book highlights peer reviewed articles from the 1st International Conference on Renewable Energy and Energy Conversion, ICREEC 2019, held at Oran in Algeria. It presents recent advances, brings together researchers and professionals in the area and presents a platform to exchange ideas and establish opportunities for a sustainable future. Topics covered in this proceedings, but not limited to, are photovoltaic systems, bioenergy, laser and plasma technology, fluid and flow for energy, software for energy and impact of energy on the environment.
Author: John Wilfred Orton Publisher: ISBN: 0199695822 Category : Science Languages : en Pages : 529
Book Description
The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early 'home-made' variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called 'low-dimensional structures' (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Author: M.O. Manasreh Publisher: Elsevier ISBN: 0080534449 Category : Science Languages : en Pages : 463
Book Description
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Author: Paolo Mele Publisher: ISBN: 9781536160864 Category : Zinc oxide thin films Languages : en Pages : 0
Book Description
Zinc oxide (ZnO) is an n-type semiconductor with versatile applications such as optical devices in ultraviolet region, piezoelectric transducers, transparent electrode for solar cells and gas sensors. This book "ZnO Thin Films: Properties, Performance and Applications" gives a deep insight in the intriguing science of zinc oxide thin films. It is devoted to cover the most recent advances and reviews the state of the art of ZnO thin films applications involving energy harvesting, microelectronics, magnetic devices, photocatalysis, photovoltaics, optics, thermoelectricity, piezoelectricity, electrochemistry, temperature sensing. It serves as a fundamental information source on the techniques and methodologies involved in zinc oxide thin films growth, characterization, post-deposition plasma treatments and device processing. This book will be invaluable to the experts to consolidate their knowledge and provide insight and inspiration to beginners wishing to learn about zinc oxide thin films.
Author: Andrea Bianchi Publisher: Hart Publishing ISBN: 9781849461375 Category : Law Languages : en Pages : 407
Book Description
This book carefully and thoroughly analyses the legal questions raised by the phenomenon of terrorism, and past and recent efforts to fight it, from the perspective of international humanitarian law (IHL). The objective is to substantially contribute to a better understanding of the issues surrounding the content and applicability of IHL as it applies to terrorism as well as to analyse and contextualise the current debates on these controversial and critically important questions. While due heed is paid to doctrinal debates, particular emphasis is placed on the practice of social actors, particularly, although not exclusively, States. The analysis of their actual conduct as well as their expectations about the interpretation and application of the law is crucial to establishing an interpretive consensus on when and how IHL is relevant to regulate acts of terrorism. The approach of the book is analytical and discursive, rather than prescriptive. Thus the reader will find the relevant rules of IHL and other legal regimes as regards terrorism, but also the debates over their application, the contradictions in State practice and the impact these may have upon IHL's evolution and implementation. The aim is to provide legal practitioners, as well as those in military, political and academic circles, with a useful reference point. Hopefully the book will also prove useful to other readers who will find its content and easy-to-read style an encouragement to getting acquainted with a topical subject, traditionally thought to be reserved for legal specialists. This book was cited with approval by the US Court of Appeals in Salim Ahmed Hamdan v United States of America, 16th October 2012
Author: FREDERIC.. WIDMANN
Author: FREDERIC.. WIDMANN
Author: Dnyaneshwar Patil
Author: Ahmed Belasri
Author: John Wilfred Orton
Author: M.O. Manasreh
Author: Paolo Mele
Author: Andrea Bianchi
Author: Universidade de Coimbra
Author: Lizhi Fang
Author: Leon Mead