Author: Publisher:
ISBN:
Category : Dielectrics
Languages : en
Pages : 592
Book Description
Epitaxial Oxide Thin Films and Heterostructures
Epitaxial Oxide Thin Films
Author: Epitaxial Oxide Thin Films and Heterostructures: Volume 341
Author: David K. ForkPublisher: Mrs Proceedings
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 432
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Epitaxial Oxide Thin Films II: Volume 401
Author: James S. SpeckPublisher:
ISBN:
Category : Science
Languages : en
Pages : 588
Book Description
Our understanding and control of epitaxial oxide heterostructures has progressed along multiple frontiers including magnetic, dielectric, ferroelectric, and superconducting oxide materials. This has resulted in both independent rediscovery and the successful borrowing of ideas from ceramic science, solid-state physics, and semiconductor epitaxy. A new field of materials science has emerged which aims at the use of the intrinsic properties of various oxide materials in single-crystal thin-film form. Exploiting the potential of these materials, however, will only be possible if many fundamental and engineering questions can be answered. This book represents continued progress toward fulfilling that promise. Technical information on epitaxial oxide thin films from industry, academia and government laboratories is presented. Topics include: dielectrics; ferroelectrics; optics; superconductors; magnetics; magnetoresistance.
Scintillator and Phosphor Materials: Volume 348
Author: Marvin J. WeberPublisher:
ISBN:
Category : Science
Languages : en
Pages : 548
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Thin Film Ferroelectric Materials and Devices
Author: R. RameshPublisher: Springer Science & Business Media
ISBN: 146156185X
Category : Technology & Engineering
Languages : en
Pages : 250
Book Description
The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early eighties saw the advent of new materials processing approaches, such as sol-gel processing, that enabled researchers to fabricate sub-micron thin films of ferroelectric materials on a silicon substrate. These pioneering developments signaled the onsetofa revival in the areaofferroelectric thin films, especially ferroelectric nonvolatile memories. Research and development effort in ferroelectric materials and devices has now hit a feverish pitch, Many university laboratories, national laboratories and advanced R&D laboratories oflarge IC manufacturers are deeply involved in the pursuit of ferroelectric device technologies. Many companies worldwide are investing considerable manpower and resources into ferroelectric technologies. Some have already announced products ranging from embedded memories in micro controllers, low density stand-alone memories, microwave circuit elements, andrf identification tags. There is now considerable optimism that ferroelectric devices andproducts will occupy a significant market-share in the new millennium.
Advanced Metallization for Devices and Circuits--science, Technology, and Manufacturability
Author: S. P. MurarkaPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 794
Book Description
Microwave Processing of Materials
Author: Materials and Processes for Environmental Protection
Author: Materials Research Society. Meeting Symposium D.Publisher:
ISBN:
Category : Diamond thin films
Languages : en
Pages : 792
Book Description
Of Panel Discussion: "Substrate Issues for Wide Bandgap Semiconductors" / Max N. Yoder, Peter K. Bachmann, Hiroyuki Matsunami and Hadis Morkoc -- Tight-Binding Study of the {211} [Sigma] = 3 Grain Boundary in Cubic Silicon-Carbide / M. Kohyama and R. Yamamoto -- Electronic Structures of [beta]-SiC(001) Surfaces and Al/[beta]-SiC(001) Interface / Xiao Hu, Hong Yan and Fumio S. Ohuchi -- Computer Simulation of Si and C Atoms on SiC Surfaces / C. C. Matthai, G. J. Moran and I. Morrison -- Dynamics at a Step on the Diamond (111) Surface / Brian N. Davidson and Warren E. Pickett -- Interaction of Hyperthermal Hydrogen with the Diamond Surface / David Haggerty, Christos Bandis and Bradford B. Pate -- Exposure of Diamond to Atomic Hydrogen: Secondary Electron Emission and Conductivity Effects / D. P. Malta, J. B. Posthill, T. P. Humphreys, R. E. Thomas, G. G. Fountain, R. A. Rudder, G. C. Hudson, M. J. Mantini and R. J. Markunas -- Surface Fermi Level Position of Diamond Treated with Plasma / Takashi Sugino, Yoshifumi Sakamoto, Atsuhiko Furukawa and Junji Shirafuji -- Surface Preparation of Single Crystal C(001) Substrates for Homoepitaxial Diamond Growth / T. P. Humphreys, J. B. Posthill, D. P. Malta, R. E. Thomas, R. A. Rudder, G. C. Hudson and R. J. Markunas -- Theoretical Studies of C(100) Surface Reconstruction and Reaction with CH[subscript 2] / Z. Jing and J. L. Whitten -- Surface Studies Relevant to the Initial Stages of Diamond Nucleation / J. M. Lannon, Jr., J. S. Gold and C. D. Stinespring.
Compound Semiconductor Epitaxy: Volume 340
Author: Charles W. TuPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 640
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.