Epitaxial Growth of Silicon on Poly-crystalline Si Seed Layer at Low Temperature by Using Hot Wire Chemical Vapor Deposition PDF Download
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Author: Manal Abdullah Aldawsari Publisher: ISBN: 9781321697520 Category : Chemical vapor deposition Languages : en Pages : 232
Book Description
Crystallinity quality is a significant factor toward confirming the epitaxial layer. Raman scattering, X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), and Transmission Electron Microscope (TEM) were used to determine the crystallinity. Epitaxial growth of Si at 500 °C was obtained even with a low vacuum of 1x10-3 torr.
Author: Manal Abdullah Aldawsari Publisher: ISBN: 9781321697520 Category : Chemical vapor deposition Languages : en Pages : 232
Book Description
Crystallinity quality is a significant factor toward confirming the epitaxial layer. Raman scattering, X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), and Transmission Electron Microscope (TEM) were used to determine the crystallinity. Epitaxial growth of Si at 500 °C was obtained even with a low vacuum of 1x10-3 torr.
Author: Ashok K. Vaseashta Publisher: Springer Science & Business Media ISBN: 1402035624 Category : Technology & Engineering Languages : en Pages : 432
Book Description
The principal aim of this NATO Advanced Study Institute (ASI) "Nanostructured and Advanced Materials for Applications in Sensor, Optoelectronic and Photovoltaic Technology" was to present a contemporary overview of the field of nanostructured and advanced electronic materials. Nanotechnology is an emerging scientific field receiving significant worldwide attention. On a nanometer scale, materials or structures may possess new and unique physical properties. Some of these are now known to the scientific community, but there may well be many properties not yet known to us, rendering it as a fascinating area of research and a suitable subject for a NATO ASI. Yet another aspect of the field is the possibility for creating meta-stable phases with unconventional properties and the ultra-miniaturization of current devices, sensors, and machines. Such nanotechnological and related advanced materials have an extremely wide range of potential applications, viz. nanoscale electronics, sensors, optoelectronics, photonics, nano-biological systems, na- medicine, energy storage systems, etc. This is a wide-ranging subject area and therefore requires the formation of multi-disciplinary teams of physicists, chemists, materials scientists, engineers, molecular biologists, pharmacologists, and others to work together on the synthesis and processing of materials and structures, the understanding of their physical properties, the design and fabrication of devices, etc. Hence, in formulating our ASI, we adopted an int- disciplinary approach, bringing together recognised experts in the various fields while retaining a level of treatment accessible to those active in specific individual areas of research and development.
Author: B Baliga Publisher: Elsevier ISBN: 0323155456 Category : Technology & Engineering Languages : en Pages : 337
Book Description
Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Author: Angèle Reinders Publisher: John Wiley & Sons ISBN: 1118927478 Category : Technology & Engineering Languages : en Pages : 754
Book Description
Solar PV is now the third most important renewable energy source, after hydro and wind power, in terms of global installed capacity. Bringing together the expertise of international PV specialists Photovoltaic Solar Energy: From Fundamentals to Applications provides a comprehensive and up-to-date account of existing PV technologies in conjunction with an assessment of technological developments. Key features: Written by leading specialists active in concurrent developments in material sciences, solar cell research and application-driven R&D. Provides a basic knowledge base in light, photons and solar irradiance and basic functional principles of PV. Covers characterization techniques, economics and applications of PV such as silicon, thin-film and hybrid solar cells. Presents a compendium of PV technologies including: crystalline silicon technologies; chalcogenide thin film solar cells; thin-film silicon based PV technologies; organic PV and III-Vs; PV concentrator technologies; space technologies and economics, life-cycle and user aspects of PV technologies. Each chapter presents basic principles and formulas as well as major technological developments in a contemporary context with a look at future developments in this rapidly changing field of science and engineering. Ideal for industrial engineers and scientists beginning careers in PV as well as graduate students undertaking PV research and high-level undergraduate students.
Author: Manal Abdullah Aldawsari
Author: Manal Abdullah Aldawsari
Author: Jack H. Thiesen
Author: Sigurd Wagner
Author: Ashok K. Vaseashta
Author: B Baliga
Author: Torsten Bistritschan
Author: Jack H. Thiesen
Author: Angèle Reinders
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