Author: Matthew W. DemingPublisher:
ISBN:
Category : Erbium
Languages : en
Pages : 170
Book Description
Epitaxial Growth of Silicon and Erbium Doped Silicon by Plasma Enhanced Chemical Vapor Deposition
Author: Matthew W. DemingPublisher:
ISBN:
Category : Erbium
Languages : en
Pages : 170
Book Description
Low Temperature Epitaxial Growth of Erbium Doped Silicon Films by Electron Cyclotron Resonance (ECR) Plasma Enhanced Chemical Vapor Deposition Using a Sublimed Metalorganic
Author: Jim L. RogersPublisher:
ISBN:
Category : Compound semiconductors
Languages : en
Pages : 198
Book Description
Plasma Enhanced Chemical Vapor Deposition of In-situ Doped Epitaxial Silicon from Silane at Low Temperatures
Author: James Hartfiel ComfortPublisher:
ISBN:
Category :
Languages : en
Pages : 352
Book Description
In situ B-doped Si epitaxial films grown by remote plasma-enhanced chemical vapor deposition
Author: Joel Thornton IrbyPublisher:
ISBN:
Category : Silicon
Languages : en
Pages : 118
Book Description
Epitaxial Silicon Technology
Author: B BaligaPublisher: Elsevier
ISBN: 0323155456
Category : Technology & Engineering
Languages : en
Pages : 337
Book Description
Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Low Temperature Epitaxial Growth of Rare Earth Doped Silicon and Silicon Germanium Alloys
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 36
Book Description
This document reports on the progress towards the growth of rare earth dope Si by low temperature plasma enhanced chemical vapor deposition (PECVD). The goal of this investigation is to develop a commercially compatible technique to deposit thick, high concentration, precipitation free, rare earth doped Si films. The low temperature growth technique used is plasma enhanced chemical vapor deposition with an electron cyclotron resonance(ECR) source. Low temperature processing is needed to avoid the formation of ErSi2 precipitates which are known to be optically inactive. Epitaxial Si films doped with varying concentrations of Er have been grown in this investigation at low substrate temperatures (
The Production of Epitaxial Silicon Wafers Via Plasma Enhanced Chemical Vapor Deposition
Author: David A. BrassChemical vapor deposition growth
Author: United States. Department of EnergyPublisher:
ISBN:
Category : Silicon
Languages : en
Pages : 260
Book Description
High Growth Rate Epitaxial Silicon and Silicon-germanium Alloys on Silicon by Plasma Enhanced Chemical Vapor Deposition (PECVD)
Author: Tien H. NguyenPublisher:
ISBN:
Category : Germanium alloys
Languages : en
Pages : 140
Book Description
From Physics to Devices: Light Emissions in Silicon
Author: Publisher: Academic Press
ISBN: 0080864465
Category : Technology & Engineering
Languages : en
Pages : 369
Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.