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Author: Publisher: ISBN: Category : Languages : en Pages : 13
Book Description
The objective of this program is to develop techniques for the vapor phase growth of high resistivity epitaxial layers of gallium arsenide on semi-insulating gallium arsenide substrates. A capability to grow such layers of high quality material with minimum structural defects and good surface quality for use as 'buffer' layers prior to the growth of active layers for such devices as FETS and TELDS will eliminate the device performance problems caused by poor and inconsistent substrate quality. (Author).
Author: Publisher: ISBN: Category : Languages : en Pages : 13
Book Description
The objective of this program is to develop techniques for the vapor phase growth of high resistivity epitaxial layers of gallium arsenide on semi-insulating gallium arsenide substrates. A capability to grow such layers of high quality material with minimum structural defects and good surface quality for use as 'buffer' layers prior to the growth of active layers for such devices as FETS and TELDS will eliminate the device performance problems caused by poor and inconsistent substrate quality. (Author).
Author: REES Publisher: Springer Science & Business Media ISBN: 1468491938 Category : Technology & Engineering Languages : en Pages : 366
Book Description
The study of deep levels in semiconductors has seen considerable growth in recent years. Many new techniques have become available for investigating both the electronic properties of deep levels and the chemical nature of the defects from which they arise. This increasing interest has been stimulated by the importance of the subject to device technology, in particular those microwave and opto-electronic devices made from GaAs, InP and their alloys. While previous conferences have covered specialist areas of deep level technology, the meeting described here was arranged to draw together workers from these separate fields of study. The following papers reflect the breadth of interests represented at the conference. For the sake of uniformity we have chosen the English alternative where an American expression has been used. We have also sought to improve grammar, sometimes without the approval of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.
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Author: Yongjo Park
Author: David Joseph Lawrence
Author: David William Woodard
Author: REES
Author: V. G. Keramidas
Author: Alison Schary
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Author: Vivian Alberts
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