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Author: Bed Nidhi Pantha Publisher: ISBN: Category : Languages : en Pages :
Book Description
III-nitride nanostructures and devices were synthesized by metal organic chemical vapor deposition (MOCVD) for their applications in various photonic, optoelectronic, and energy devices such as deep ultraviolet (DUV) photodetectors, solar cells, visible emitters, thermometric (TE) power generators, etc. Structural and optical properties in thicker AlN epilayers were found to be better than those in thinner AlN epilayers. Full-width at half maxima (FWHM) of x-ray diffraction (XRD) rocking curves as small as 63 and 437 arcsec were measured at (002) and (102) reflections, respectively in a thick AlN epilayer (4 mm). The dark current of the fabricated AlN detectors decreases drastically as AlN epilayer thickness increases. DUV photoluminescence (PL) spectroscopy and x-ray diffraction (XRD) measurements were employed to study the effect of biaxial stress in AlN epilayers grown on different substrates. Stress-induced band gap shift of 45 meV/GPa was obtained in AlN epilayers. The potential of InGaN alloys as TE materials for thermopower generation has been investigated. It was found that as In content increases, thermal conductivity decreases and power factor increases, which leads to an increase in the TE figure of merit (ZT). The value of ZT was found to be 0.08 at 300 K and reached 0.23 at 450 K for In0.36Ga0.64N alloy, which is comparable to that of SiGe based alloys. Single phase In[subscript]xGa1[subscript]xN alloys inside the theoretically predicted miscibility gap region (x = 0.4 to 0.7) were successfully synthesized. A single peak of XRD [W-20] scans of the (002) plane in InGaN alloys confirms that there is no phase separation. Electrical properties and surface morphologies were found to be reasonably good. It was found that growth rate should be high enough (>400 nm/hr) to achieve high quality and single phase In[subscript]xGa1[subscript]xN alloys in this miscibility gap region. Mg-doped In[subscript]xGa1−[subscript]xN alloys were synthesized and characterized by Hall-effect and PL measurements for their application as visible emitters. P-type conductivity was measured up to x = 0.35 with accepter activation energy as low as 43 meV, which is about 4 times lower than that of Mg-doped p-type GaN. Resistivity as low as 0.4 [omega]-cm with a free hole concentration as high as 5x1018 cm-3 was measured in Mg-doped In0.22Ga0.--N. PL intensity decreased ~3 orders in magnitude when x increased from 0 to 0.22 in Mg-doped In[subscript]xGa1−[subscript]xN alloys.
Author: Bed Nidhi Pantha Publisher: ISBN: Category : Languages : en Pages :
Book Description
III-nitride nanostructures and devices were synthesized by metal organic chemical vapor deposition (MOCVD) for their applications in various photonic, optoelectronic, and energy devices such as deep ultraviolet (DUV) photodetectors, solar cells, visible emitters, thermometric (TE) power generators, etc. Structural and optical properties in thicker AlN epilayers were found to be better than those in thinner AlN epilayers. Full-width at half maxima (FWHM) of x-ray diffraction (XRD) rocking curves as small as 63 and 437 arcsec were measured at (002) and (102) reflections, respectively in a thick AlN epilayer (4 mm). The dark current of the fabricated AlN detectors decreases drastically as AlN epilayer thickness increases. DUV photoluminescence (PL) spectroscopy and x-ray diffraction (XRD) measurements were employed to study the effect of biaxial stress in AlN epilayers grown on different substrates. Stress-induced band gap shift of 45 meV/GPa was obtained in AlN epilayers. The potential of InGaN alloys as TE materials for thermopower generation has been investigated. It was found that as In content increases, thermal conductivity decreases and power factor increases, which leads to an increase in the TE figure of merit (ZT). The value of ZT was found to be 0.08 at 300 K and reached 0.23 at 450 K for In0.36Ga0.64N alloy, which is comparable to that of SiGe based alloys. Single phase In[subscript]xGa1[subscript]xN alloys inside the theoretically predicted miscibility gap region (x = 0.4 to 0.7) were successfully synthesized. A single peak of XRD [W-20] scans of the (002) plane in InGaN alloys confirms that there is no phase separation. Electrical properties and surface morphologies were found to be reasonably good. It was found that growth rate should be high enough (>400 nm/hr) to achieve high quality and single phase In[subscript]xGa1[subscript]xN alloys in this miscibility gap region. Mg-doped In[subscript]xGa1−[subscript]xN alloys were synthesized and characterized by Hall-effect and PL measurements for their application as visible emitters. P-type conductivity was measured up to x = 0.35 with accepter activation energy as low as 43 meV, which is about 4 times lower than that of Mg-doped p-type GaN. Resistivity as low as 0.4 [omega]-cm with a free hole concentration as high as 5x1018 cm-3 was measured in Mg-doped In0.22Ga0.--N. PL intensity decreased ~3 orders in magnitude when x increased from 0 to 0.22 in Mg-doped In[subscript]xGa1−[subscript]xN alloys.
Author: Zhe Chuan Feng Publisher: World Scientific ISBN: 1786343207 Category : Science Languages : en Pages : 424
Book Description
Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications.The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura 'for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources'. Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps.Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009.
Author: Zhe Chuan Feng Publisher: World Scientific ISBN: 1908979941 Category : Technology & Engineering Languages : en Pages : 442
Book Description
III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a
Author: Takashi Matsuoka Publisher: Springer ISBN: 9783030095420 Category : Technology & Engineering Languages : en Pages : 223
Book Description
This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.
Author: Mohamed Henini Publisher: Elsevier ISBN: 0080455999 Category : Technology & Engineering Languages : en Pages : 648
Book Description
- This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. - It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics - Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field - Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community
Author: Roksana Tonny Rashid Publisher: ISBN: Category : Languages : en Pages :
Book Description
"Green photonics, i.e., photonic devices and systems that can operate at high efficiency and with reduced energy consumption and minimum environmental impact, holds the key to address the energy and environmental challenges we face. III-nitride semiconductors have unique properties that can be exploited to realize next generation green photonic devices and systems. Their energy bandgap can cover nearly the entire solar spectrum, making them an ideal material for LEDs and lasers operating in the blue, green and red, and for solar energy harvesting. However, conventional III-nitride epilayers have some fundamental issues. It is very difficult to incorporate high indium composition. As a result, the performance of GaN-based green LEDs is much worse than those operating in the blue spectrum, leading to the so-called “green gap” in photonics. On the same circumstances, there has been no demonstration of efficient photovoltaic devices using GaN-based materials. The realization of these devices and systems with high efficiency will address some of the grand challenges we face, including energy generation, reliability, distribution and utilization. Therefore, it is essential to develop novel III-nitride semiconductor materials to realize green photonic devices and systems.In this thesis, we have investigated the molecular beam epitaxial (MBE) growth and fundamental structural, electrical and optical properties of InGaN/GaN heterostructures for applications in green light emitters and artificial photosynthesis. With the use of selective area epitaxy (SAG), InGaN/AlGaN core–shell dot-in-nanowire arrays have been grown with precisely controlled size, spacing, and morphology. We have demonstrated, for the first time, all epitaxial surface-emitting green laser diodes, which can exhibit a very low threshold current density ~400 A/cm2 at room temperature. We have further explored the potential of GaN-based nanocrystals for the development of artificial photosynthesis devices for the conversion of CO2 to syngas, a combination of CO and H2 and one of the prominent future solar fuels. We have investigated the design and performance of photoelectrochemical and photochemical cells for syngas production. A new benchmark record of 1.88% efficiency for syngas generation has been achieved by integrating Au/Pt co-catalyst particles on GaN nanowire arrays in a photoelectrochemical cell. In order to utilize the abundant visible solar spectrum, we have designed a multi-band InGaN/GaN nanowire heterostructure, which is decorated with the unique Au/CrOx core/shell nanostructures. The engineered InGaN/GaN heterostructures can exhibit a energy conversion efficiency of ~0.91% in a simple, one-step photochemical cell. This thesis establishes the use of III-nitride nanocrystals for energy efficient green light emitters and solar fuel production"--
Author: M Razeghi Publisher: Elsevier ISBN: 9780080444260 Category : Science Languages : en Pages : 602
Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author: Zhe Chuan Feng Publisher: World Scientific ISBN: 1848162235 Category : Technology & Engineering Languages : en Pages : 477
Book Description
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Author: Bernard Gil Publisher: Semiconductor Science and Tech ISBN: 0199681724 Category : Science Languages : en Pages : 661
Book Description
All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.
Author: Bed Nidhi Pantha
Author: Bed Nidhi Pantha
Author: Zhe Chuan Feng
Author: Zhe Chuan Feng
Author: Takashi Matsuoka
Author: 
Author: Mohamed Henini
Author: Roksana Tonny Rashid
Author: M Razeghi
Author: Zhe Chuan Feng
Author: Bernard Gil