Author: Vivian AlbertsPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 628
Book Description
Epitaxial Growth of GaAs on Si
Author: Vivian AlbertsPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 628
Book Description
Epitaxial Growth of Si(Ge) Materials on Si and GaAs by Low Temperature PECVD: Towards Tandem Devices
Author: Romain CariouLaser-assisted Molecular Beam Epitaxial Growth of GaAs on Si (100)
Author: F. J. GrunthanerMaterial and Device Studies of Heteroepitaxial GaAs Films on Si Substrates by Molecular Beam Epitaxy
Author: Henry Po-Heng LeeThe Residual Strain in GaAs Epitaxial Layers Grown in Si Substrates by Molecular Beam Epitaxy
Author: Hyunchul SohnMolecular Beam Epitaxial Growth and Material Properties of GaAs and AlGaAs on Si(100).
Author: W. I. WangLow Temperature Epitaxial Growth of Semiconductors
Author: Takashi HariuPublisher: World Scientific
ISBN: 9789971508395
Category : Technology & Engineering
Languages : en
Pages : 356
Book Description
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems
Author: Julie TournetPublisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 144
Book Description
The growth of Aluminum (Al) on semiconductors and dielectrics is a cornerstone in the quest for scalable quantum computing systems. Indeed the electrical properties of Al make it an exceptional candidate for the realization of superconducting resonators, pivotal tools for understanding and operating superconducting qubits. Such resonators have been fabricated recently on Sapphire substrates, using molecular beam epitaxy (MBE), and displayed quality factors above a million. Complementary studies of these resonators have demonstrated that the metal-substrate interface was the primary source of decoherence and losses, highlighting the importance of pristine interfaces (free of contaminants), and high quality epitaxial growth in order to minimize the native defects level. In this work we investigate different substrate materials in order to yield equivalent or higher quality factor resonators. Gallium Arsenide (GaAs) and Silicon (Si) were selected for their good dielectric properties, well-established processing techniques and a potential on-chip integration. After thermal substrate annealing, and in some cases deposition of a buffer structure, Al was grown on both substrates at low temperature, using MBE. In view of the extreme sensitivity of the resulting Al crystal orientation to the initial surface conditions, different starting surface reconstructions were investigated. Growth evolution was studied with reflection high energy electron diffraction simultaneously at several azimuths during deposition on rotating substrates. The substrate temperature, the system background pressure and possible sources of contamination were monitored carefully to ensure the reproducibility of the results. Resulting layers were subsequently characterized with X-ray diffraction (XRD) to confirm their epitaxial nature and crystallographic orientation. Finally, atomic force microscopy was used to assess the layers morphology. Different growth modes were observed depending on the material: Al grew in a Stranski-Krastanov mode on GaAs(001) surfaces, in a Frank-van-der-Merwe mode on Si(111) surfaces and in a Volmer-Weber mode on Si(001) surfaces. All yielded crystalline structures. Targeting atomically smooth single crystalline materials, best results were obtained for Al(110) deposited on GaAs(001)-(2x4) substrates with surfaces showing RMS roughness of 0.552nm. While the epitaxy on Si(111)-(``1x1") led to single-crystalline Al(111) layers with a RMS roughness of only 0.487nm, a detailed XRD study indicated a possible misalignment of the crystallites that could induce defects in the material. Similarly, epitaxy on Si(111)-(7x7) substrates yielded Al(111) layers of a RMS roughness of 0.519nm that, however, appeared rougher under the Nomarski microscope, likely due to the surface preparation prior to Al deposition. The deposition on Si(001)-(2x1) substrates led to bi-crystals of Al(110) of higher RMS roughness (0.719nm). Finally, the growth on GaAs(001)-(4x4) reconstruction led to polycrystalline materials with mixed Al(100), Al(110) and Al(111) of RMS roughness 1.20nm. Moreover, the composition of the layers grown on the GaAs(001)-(4x4) reconstruction was inconsistent across multiple growths.
Fabrication of Reduced Dislocation Density GaAs on Si by Stoichiometric Low-temperature Epitaxial Growth
Author: Patrick Jonathan TaylorPublisher:
ISBN:
Category :
Languages : en
Pages : 322
Book Description
Silicon Epitaxy
Author: Publisher: Elsevier
ISBN: 0080541003
Category : Science
Languages : en
Pages : 514
Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.