Epitaxial Growth and Doping of Indium Gallium Arsenide and Gallium Arsenide with Carbon Tetrachloride and Silane Using Metalorganic Chemical Vapor Deposition PDF Download

Author: Brian T. Hemmelman
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 310

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Author: Donald T. Hawkins
Publisher: Springer
ISBN:
Category : Reference
Languages : en
Pages : 762

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Book Description

Author: Vilnis Guntis Kreismanis
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 352

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Book Description

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Book Description
The rates of decomposition of carbon tetrachloride (CCl4), triethylgallium (TEGa) and tertiarybutylarsine (TBAs), and the rate of GaAs film growth, were measured as a function of the process conditions during organometallic vapor phase epitaxy. In addition, the reaction of CC14 with the GaAs(001) surface was monitored in ultrahigh vacuum using infrared spectroscopy, temperature programmed desorption, and scanning tunneling microscopy. These experiments have revealed that CC14 adsorbs onto Ga sites, and decomposes by transferring chlorine ligands to other Ga atoms on the surface. Chlorine and gallium desorb from the surface as GaCl, while the carbon incorporates into the lattice. Triethylgallium is consumed by two competing reactions; GaAs film growth, and GaCl etching. Depending on the V/III and IV/III ratios and temperature, the etch rate can be high enough to prevent any GaAs deposition.

Author: Kam Tai Chan
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 450

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Author: Michael J. Begarney
Publisher:
ISBN:
Category : Chemical engineering
Languages : en
Pages : 3

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Author:
Publisher:
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Category : Chemistry
Languages : en
Pages : 2002

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Author: Dietrich W. Vook
Publisher:
ISBN:
Category :
Languages : en
Pages : 212

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Author: Hyukju Jay Moon
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 134

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Author: Shirley S. Chu
Publisher:
ISBN:
Category :
Languages : en
Pages : 30

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Book Description
The objective of this project is to investigate the epitaxial growth of device quality III-V semiconductor films by the free electron laser-induced epitaxial growth technique at low temperatures. Efforts during the past year has been focused to the homo- and heteroepitaxial growth and characterization of gallium arsenide (GaAs) films on GaAs and silicon (Si) substrates by laser-induced metalorganic chemical vapor deposition (LIMOCVD). ArF excimer laser (193 nm) was used before the free electron laser is available. The reaction between trimethylgallium and arsine in hydrogen under reduced pressure was used for the epitaxial growth of GaAs. Homoepitaxial GaAs films deposited by LIMOCVD at 425 - 500 C are similar to conventional homoepitaxial GaAs films (at 700 C) in properties. Heteroepitaxial GaAs films on Si substrates of (100) orientation have been deposited at 500 C by LIMOCVD with emphasis on the cleanliness of the substrate surface. Transmission electron microscopy and Raman spectra indicated that the heteroepitaxial GaAs films are presumably of a (111) orientation and that their crystalline perfection is superior to those deposited by other techniques. Keywords: Epitaxial growth; Chemical vapor deposition; Excimer; Homoepitaxial growth; Heteroepitaxial growth; Dislocation; Doping concentration.