Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
The objective of this project were the understanding of heteroepitaxial growth of SiGe/Si, dislocation control for highly mismatched layers, and the application of such heterostructure to high speed microelectronics and optoelectronics. A new technique of dislocation control, using a low temperature Si buffer layer, has been identified. SiGe/Si heterostructure FETs have been fabricated, using this technique. Heterostructure bipolar transistors have been utilized to realize the first SiGe based integrated photoreceivers. The electro-optic coefficients in SiGe/Si quantum wells have also been measured. Modulators, whose operation principle is based on the small conduction band offset, in this heterostructure, has been demonstrated theoretically and experimentally, for the first time. Theoretical work, involving a charge control study of the interfacial effects in p-MOSFETs.
Epitaxia1 Growth and Characterization of Si(1-x)Ge(x) Materials and Devices
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
The objective of this project were the understanding of heteroepitaxial growth of SiGe/Si, dislocation control for highly mismatched layers, and the application of such heterostructure to high speed microelectronics and optoelectronics. A new technique of dislocation control, using a low temperature Si buffer layer, has been identified. SiGe/Si heterostructure FETs have been fabricated, using this technique. Heterostructure bipolar transistors have been utilized to realize the first SiGe based integrated photoreceivers. The electro-optic coefficients in SiGe/Si quantum wells have also been measured. Modulators, whose operation principle is based on the small conduction band offset, in this heterostructure, has been demonstrated theoretically and experimentally, for the first time. Theoretical work, involving a charge control study of the interfacial effects in p-MOSFETs.
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
The objective of this project were the understanding of heteroepitaxial growth of SiGe/Si, dislocation control for highly mismatched layers, and the application of such heterostructure to high speed microelectronics and optoelectronics. A new technique of dislocation control, using a low temperature Si buffer layer, has been identified. SiGe/Si heterostructure FETs have been fabricated, using this technique. Heterostructure bipolar transistors have been utilized to realize the first SiGe based integrated photoreceivers. The electro-optic coefficients in SiGe/Si quantum wells have also been measured. Modulators, whose operation principle is based on the small conduction band offset, in this heterostructure, has been demonstrated theoretically and experimentally, for the first time. Theoretical work, involving a charge control study of the interfacial effects in p-MOSFETs.
Epitaxial Growth and Characterization of Si(1-x)Ge(x) Materials and Devices
Author: Pallab Bhattacharya
Publisher:
ISBN:
Category :
Languages : en
Pages : 38
Book Description
The objectives of this project were the understanding of heteroepitaxial growth of SiGe/Si, dislocation control for highly mismatched layers, and the application of such heterostructures to high speed microelectronics and optoelectronics. A new technique of dislocation control, using a low-temperature Si buffer layer, has been identified. SiGe/Si heterostructure FETs have been fabricated, using this technique. Heterostructure bipolar transistors have been utilized to realize the first SiGe-based integrated photoreceivers. The electro-optic coefficients in SiGe/Si quantum wells have also been measured. Modulators, whose operation principle is based on the small conduction band offset, in this heterostructure, has been demonstrated theoretically and experimentally, for the first time. Theoretical work, involving a charge control study of the interfacial effects in p-MOSFETs.
Publisher:
ISBN:
Category :
Languages : en
Pages : 38
Book Description
The objectives of this project were the understanding of heteroepitaxial growth of SiGe/Si, dislocation control for highly mismatched layers, and the application of such heterostructures to high speed microelectronics and optoelectronics. A new technique of dislocation control, using a low-temperature Si buffer layer, has been identified. SiGe/Si heterostructure FETs have been fabricated, using this technique. Heterostructure bipolar transistors have been utilized to realize the first SiGe-based integrated photoreceivers. The electro-optic coefficients in SiGe/Si quantum wells have also been measured. Modulators, whose operation principle is based on the small conduction band offset, in this heterostructure, has been demonstrated theoretically and experimentally, for the first time. Theoretical work, involving a charge control study of the interfacial effects in p-MOSFETs.
Fundamentals of III-V Semiconductor MOSFETs
Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Graphene
Author: C. N. R. Rao
Publisher: John Wiley & Sons
ISBN: 3527651144
Category : Science
Languages : en
Pages : 459
Book Description
Since its discovery in 2004, graphene has been a great sensation due to its unique structure and unusual properties, and it has only taken 6 years for a Noble Prize to be awarded for the field of graphene research. This monograph gives a well-balanced overview on all areas of scientific interest surrounding this fascinating nanocarbon. In one handy volume it offers comprehensive coverage of the topic, including chemical, materials science, nanoscience, physics, engineering, life science, and potential applications. Other graphene-like, inorganic layered materials are also discussed. Edited by two highly honored scientists, this is an invaluable companion for inorganic, organic, and physical chemists, materials scientists, and physicists. From the Contents: * Synthesis, Characterization, and Selected Properties of Graphene * Understanding Graphene via Raman Scattering * Physics of Quanta and Quantum Fields in Graphene * Graphene and Graphene-Oxide-Based Materials for Electrochemical Energy Systems * Heterogeneous Catalysis by Metal Nanoparticles supported on Graphene * Graphenes in Supramolecular Gels and in Biological Systems and many more
Publisher: John Wiley & Sons
ISBN: 3527651144
Category : Science
Languages : en
Pages : 459
Book Description
Since its discovery in 2004, graphene has been a great sensation due to its unique structure and unusual properties, and it has only taken 6 years for a Noble Prize to be awarded for the field of graphene research. This monograph gives a well-balanced overview on all areas of scientific interest surrounding this fascinating nanocarbon. In one handy volume it offers comprehensive coverage of the topic, including chemical, materials science, nanoscience, physics, engineering, life science, and potential applications. Other graphene-like, inorganic layered materials are also discussed. Edited by two highly honored scientists, this is an invaluable companion for inorganic, organic, and physical chemists, materials scientists, and physicists. From the Contents: * Synthesis, Characterization, and Selected Properties of Graphene * Understanding Graphene via Raman Scattering * Physics of Quanta and Quantum Fields in Graphene * Graphene and Graphene-Oxide-Based Materials for Electrochemical Energy Systems * Heterogeneous Catalysis by Metal Nanoparticles supported on Graphene * Graphenes in Supramolecular Gels and in Biological Systems and many more
Silicon Based Thin Film Solar Cells
Author: Roberto Murri
Publisher: Bentham Science Publishers
ISBN: 160805456X
Category : Technology & Engineering
Languages : en
Pages : 524
Book Description
Silicon Based Thin Film Solar Cells explains concepts related to technologies for silicon (Si) based photovoltaic applications. Topics in this book focus on ‘new concept’ solar cells. These kinds of cells can make photovoltaic power production an economically viable option in comparison to the bulk crystalline semiconductor technology industry. A transition from bulk crystalline Si solar cells toward thin-film technologies reduces usage of active material and introduces new concepts based on nanotechnologies. Despite its importance, the scientific development and understanding of new solar cells is not very advanced, and educational resources for specialized engineers and scientists are required. This textbook presents the fundamental scientific aspects of Si thin films growth technology, together with a clear understanding of the properties of the material and how this is employed in new generation photovoltaic solar cells. The textbook is a valuable resource for graduate students working on their theses, young researchers and all people approaching problems and fundamental aspects of advanced photovoltaic conversion.
Publisher: Bentham Science Publishers
ISBN: 160805456X
Category : Technology & Engineering
Languages : en
Pages : 524
Book Description
Silicon Based Thin Film Solar Cells explains concepts related to technologies for silicon (Si) based photovoltaic applications. Topics in this book focus on ‘new concept’ solar cells. These kinds of cells can make photovoltaic power production an economically viable option in comparison to the bulk crystalline semiconductor technology industry. A transition from bulk crystalline Si solar cells toward thin-film technologies reduces usage of active material and introduces new concepts based on nanotechnologies. Despite its importance, the scientific development and understanding of new solar cells is not very advanced, and educational resources for specialized engineers and scientists are required. This textbook presents the fundamental scientific aspects of Si thin films growth technology, together with a clear understanding of the properties of the material and how this is employed in new generation photovoltaic solar cells. The textbook is a valuable resource for graduate students working on their theses, young researchers and all people approaching problems and fundamental aspects of advanced photovoltaic conversion.
Quantum Dot Heterostructures
Author: Dieter Bimberg
Publisher: John Wiley & Sons
ISBN: 9780471973881
Category : Science
Languages : en
Pages : 350
Book Description
Da die Nachfrage nach immer schnelleren und kleineren Halbleiterbauelementen stetig wächst, sind Quanten-Dots und -Pyramiden rasant in den Mittelpunkt der Halbleiterforschung gerückt. Dieses Buch vermittelt einen umfassenden Überblick über den aktuellen Forschungsstand auf diesem Gebiet. Behandelt werden u.a. Fragen, wie Strukturen aufgebaut, wie sie charakterisiert werden und wie sie die Leistungsfähigkeit der Bauelemente bestimmen. (11/98)
Publisher: John Wiley & Sons
ISBN: 9780471973881
Category : Science
Languages : en
Pages : 350
Book Description
Da die Nachfrage nach immer schnelleren und kleineren Halbleiterbauelementen stetig wächst, sind Quanten-Dots und -Pyramiden rasant in den Mittelpunkt der Halbleiterforschung gerückt. Dieses Buch vermittelt einen umfassenden Überblick über den aktuellen Forschungsstand auf diesem Gebiet. Behandelt werden u.a. Fragen, wie Strukturen aufgebaut, wie sie charakterisiert werden und wie sie die Leistungsfähigkeit der Bauelemente bestimmen. (11/98)
The Physics Of Quantum Well Infrared Photodetectors
Author: Kwong-kit Choi
Publisher: World Scientific
ISBN: 9814498173
Category : Science
Languages : en
Pages : 434
Book Description
In the past, infrared imaging has been used exclusively for military applications. In fact, it can also be useful in a wide range of scientific and commercial applications. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost. Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors. With the new technology, these impedances can be eliminated and a new era of infrared imaging is in sight. This book is designed to give a systematic description on the underlying physics of the new detectors and other issues related to infrared imaging.
Publisher: World Scientific
ISBN: 9814498173
Category : Science
Languages : en
Pages : 434
Book Description
In the past, infrared imaging has been used exclusively for military applications. In fact, it can also be useful in a wide range of scientific and commercial applications. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost. Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors. With the new technology, these impedances can be eliminated and a new era of infrared imaging is in sight. This book is designed to give a systematic description on the underlying physics of the new detectors and other issues related to infrared imaging.
Molecular Beam Epitaxy
Author: Marian A. Herman
Publisher: Springer Science & Business Media
ISBN: 3642970982
Category : Technology & Engineering
Languages : en
Pages : 394
Book Description
This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
Publisher: Springer Science & Business Media
ISBN: 3642970982
Category : Technology & Engineering
Languages : en
Pages : 394
Book Description
This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
An Introduction to Composite Materials
Author: D. Hull
Publisher: Cambridge University Press
ISBN: 1107393183
Category : Technology & Engineering
Languages : en
Pages : 334
Book Description
This edition has been greatly enlarged and updated to provide both scientists and engineers with a clear and comprehensive understanding of composite materials. In describing both theoretical and practical aspects of their production, properties and usage, the book crosses the borders of many disciplines. Topics covered include: fibres, matrices, laminates and interfaces; elastic deformation, stress and strain, strength, fatigue crack propagation and creep resistance; toughness and thermal properties; fatigue and deterioration under environmental conditions; fabrication and applications. Coverage has been increased to include polymeric, metallic and ceramic matrices and reinforcement in the form of long fibres, short fibres and particles. Designed primarily as a teaching text for final-year undergraduates in materials science and engineering, this book will also interest undergraduates and postgraduates in chemistry, physics, and mechanical engineering. In addition, it will be an excellent source book for academic and technological researchers on materials.
Publisher: Cambridge University Press
ISBN: 1107393183
Category : Technology & Engineering
Languages : en
Pages : 334
Book Description
This edition has been greatly enlarged and updated to provide both scientists and engineers with a clear and comprehensive understanding of composite materials. In describing both theoretical and practical aspects of their production, properties and usage, the book crosses the borders of many disciplines. Topics covered include: fibres, matrices, laminates and interfaces; elastic deformation, stress and strain, strength, fatigue crack propagation and creep resistance; toughness and thermal properties; fatigue and deterioration under environmental conditions; fabrication and applications. Coverage has been increased to include polymeric, metallic and ceramic matrices and reinforcement in the form of long fibres, short fibres and particles. Designed primarily as a teaching text for final-year undergraduates in materials science and engineering, this book will also interest undergraduates and postgraduates in chemistry, physics, and mechanical engineering. In addition, it will be an excellent source book for academic and technological researchers on materials.
The Technology and Physics of Molecular Beam Epitaxy
Author: E.H.C. Parker
Publisher: Springer
ISBN: 9781489953667
Category : Science
Languages : en
Pages : 686
Book Description
Publisher: Springer
ISBN: 9781489953667
Category : Science
Languages : en
Pages : 686
Book Description