Author: Max John Helix
Publisher:
ISBN:
Category :
Languages : en
Pages : 172
Book Description
Low temperature photoluminescence and Auger electron spectroscopy (AES) are used to study SIO2 and Si3N4 as encapsulants for high temperature annealing of GaAs. These encapsulants are used in the fabrication of planar diodes in GaAs, and the resulting electrical and optical properties of the devices are examined. Silicon dioxide or silicon oxy-nitride layers allow the outdiffusion of Ga when they are used to encapsulate GaAs during high temperature annealing. .In contrast, silicon nitride layers which are essentially free of oxygen can be used to anneal GaAs with negligible Ga outdiffusion. A versatile rf plasma deposition system capable of depositing high quality Si3N4 films at low temperatures is described. In this system, reacting gases are introduced into the reaction chamber separately, and great care is taken to reduce residual oxygen in the system. Composition (ration of silicon to nitrogen), index of refraction, etch rate, and deposition rate are reported for films deposited under various conditions. Electrical characterization of the Si3N4 films is also presented.
Encapsulation Studies and Planar Device Fabrication in Gallium Arsenide
Author: Max John Helix
Publisher:
ISBN:
Category :
Languages : en
Pages : 172
Book Description
Low temperature photoluminescence and Auger electron spectroscopy (AES) are used to study SIO2 and Si3N4 as encapsulants for high temperature annealing of GaAs. These encapsulants are used in the fabrication of planar diodes in GaAs, and the resulting electrical and optical properties of the devices are examined. Silicon dioxide or silicon oxy-nitride layers allow the outdiffusion of Ga when they are used to encapsulate GaAs during high temperature annealing. .In contrast, silicon nitride layers which are essentially free of oxygen can be used to anneal GaAs with negligible Ga outdiffusion. A versatile rf plasma deposition system capable of depositing high quality Si3N4 films at low temperatures is described. In this system, reacting gases are introduced into the reaction chamber separately, and great care is taken to reduce residual oxygen in the system. Composition (ration of silicon to nitrogen), index of refraction, etch rate, and deposition rate are reported for films deposited under various conditions. Electrical characterization of the Si3N4 films is also presented.
Publisher:
ISBN:
Category :
Languages : en
Pages : 172
Book Description
Low temperature photoluminescence and Auger electron spectroscopy (AES) are used to study SIO2 and Si3N4 as encapsulants for high temperature annealing of GaAs. These encapsulants are used in the fabrication of planar diodes in GaAs, and the resulting electrical and optical properties of the devices are examined. Silicon dioxide or silicon oxy-nitride layers allow the outdiffusion of Ga when they are used to encapsulate GaAs during high temperature annealing. .In contrast, silicon nitride layers which are essentially free of oxygen can be used to anneal GaAs with negligible Ga outdiffusion. A versatile rf plasma deposition system capable of depositing high quality Si3N4 films at low temperatures is described. In this system, reacting gases are introduced into the reaction chamber separately, and great care is taken to reduce residual oxygen in the system. Composition (ration of silicon to nitrogen), index of refraction, etch rate, and deposition rate are reported for films deposited under various conditions. Electrical characterization of the Si3N4 films is also presented.
Scientific and Technical Aerospace Reports
Fabrication and Performance of Gallium Arsenide Planar-doped Barrier Transistors
Author: Mark Alexander Hollis
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 548
Book Description
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 548
Book Description
The Summary of Engineering Research
Author: University of Illinois at Urbana-Champaign. Office of Engineering Publications
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 320
Book Description
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 320
Book Description
Technical Abstract Bulletin
Gallium Arsenide Technology
Author: David K. Ferry
Publisher: Sams Technical Publishing
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 504
Book Description
Publisher: Sams Technical Publishing
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 504
Book Description
Faculty Publications and Doctoral Dissertations
Author: University of Illinois at Urbana-Champaign
Publisher:
ISBN:
Category :
Languages : en
Pages : 1188
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 1188
Book Description
Gallium Arsenide Technology in Europe
Author: Joseph Mun
Publisher: Springer
ISBN:
Category : Computers
Languages : en
Pages : 408
Book Description
Publisher: Springer
ISBN:
Category : Computers
Languages : en
Pages : 408
Book Description