Author: Alexander Lidow
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 190
Book Description
Encapsulation and Annealing of Ion Implanted Selenium in GaAs
Author: Alexander Lidow
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 190
Book Description
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 190
Book Description
Scientific and Technical Aerospace Reports
Si Silicon
Author: Eberhard F. Krimmel
Publisher: Springer Science & Business Media
ISBN: 3662099012
Category : Technology & Engineering
Languages : en
Pages : 417
Book Description
This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.
Publisher: Springer Science & Business Media
ISBN: 3662099012
Category : Technology & Engineering
Languages : en
Pages : 417
Book Description
This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.
An Experimental Study of Capless Annealing of Ion Implanted Gallium-arsenide
Author: Gary Lynn Harris
Publisher:
ISBN:
Category : Ion implantation
Languages : en
Pages : 314
Book Description
Publisher:
ISBN:
Category : Ion implantation
Languages : en
Pages : 314
Book Description
Review
The GEC Journal of Research
Nuclear Science Abstracts
Report on Research at AFCRL.
Author: Air Force Cambridge Research Laboratories (U.S.)
Publisher:
ISBN:
Category : Geophysics
Languages : en
Pages : 336
Book Description
Publisher:
ISBN:
Category : Geophysics
Languages : en
Pages : 336
Book Description
Microscopy of Semiconducting Materials 1983, Third Oxford Conference on Microscopy of Semiconducting Materials, St Catherines College, March 1983
Author: Cullis
Publisher: CRC Press
ISBN: 9780854981588
Category : Technology & Engineering
Languages : en
Pages : 552
Book Description
Publisher: CRC Press
ISBN: 9780854981588
Category : Technology & Engineering
Languages : en
Pages : 552
Book Description
Microscopy of Semiconducting Materials 1983, Third Oxford Conference on Microscopy of Semiconducting Materials, St Catherines College, March 1983
Author: A.G. Cullis
Publisher: CRC Press
ISBN: 1000156974
Category : Science
Languages : en
Pages : 552
Book Description
This volume contains invited and contributed papers at the conference on Microscopy of Semiconducting Materials which took place on 21–23 March 1983 in St Cathernine's College, Oxford. The conference was the third in the series devoted to advances in microscopical studies of semiconductors.
Publisher: CRC Press
ISBN: 1000156974
Category : Science
Languages : en
Pages : 552
Book Description
This volume contains invited and contributed papers at the conference on Microscopy of Semiconducting Materials which took place on 21–23 March 1983 in St Cathernine's College, Oxford. The conference was the third in the series devoted to advances in microscopical studies of semiconductors.