Electronic Transport in Dirac Materials:graphene and a Topological Insulator(Bi2Se3) PDF Download

Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Electronic Transport in Dirac Materials:graphene and a Topological Insulator(Bi2Se3) PDF full book. Access full book title Electronic Transport in Dirac Materials:graphene and a Topological Insulator(Bi2Se3) by Sungjae Cho. Download full books in PDF and EPUB format.

Electronic Transport in Dirac Materials:graphene and a Topological Insulator(Bi2Se3)

Electronic Transport in Dirac Materials:graphene and a Topological Insulator(Bi2Se3) PDF Author: Sungjae Cho
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description


Electronic Transport in Dirac Materials:graphene and a Topological Insulator(Bi2Se3)

Electronic Transport in Dirac Materials:graphene and a Topological Insulator(Bi2Se3) PDF Author: Sungjae Cho
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description


Dirac Matter

Dirac Matter PDF Author: Bertrand Duplantier
Publisher: Birkhäuser
ISBN: 3319325361
Category : Science
Languages : en
Pages : 139

Book Description
This fifteenth volume of the Poincare Seminar Series, Dirac Matter, describes the surprising resurgence, as a low-energy effective theory of conducting electrons in many condensed matter systems, including graphene and topological insulators, of the famous equation originally invented by P.A.M. Dirac for relativistic quantum mechanics. In five highly pedagogical articles, as befits their origin in lectures to a broad scientific audience, this book explains why Dirac matters. Highlights include the detailed "Graphene and Relativistic Quantum Physics", written by the experimental pioneer, Philip Kim, and devoted to graphene, a form of carbon crystallized in a two-dimensional hexagonal lattice, from its discovery in 2004-2005 by the future Nobel prize winners Kostya Novoselov and Andre Geim to the so-called relativistic quantum Hall effect; the review entitled "Dirac Fermions in Condensed Matter and Beyond", written by two prominent theoreticians, Mark Goerbig and Gilles Montambaux, who consider many other materials than graphene, collectively known as "Dirac matter", and offer a thorough description of the merging transition of Dirac cones that occurs in the energy spectrum, in various experiments involving stretching of the microscopic hexagonal lattice; the third contribution, entitled "Quantum Transport in Graphene: Impurity Scattering as a Probe of the Dirac Spectrum", given by Hélène Bouchiat, a leading experimentalist in mesoscopic physics, with Sophie Guéron and Chuan Li, shows how measuring electrical transport, in particular magneto-transport in real graphene devices - contaminated by impurities and hence exhibiting a diffusive regime - allows one to deeply probe the Dirac nature of electrons. The last two contributions focus on topological insulators; in the authoritative "Experimental Signatures of Topological Insulators", Laurent Lévy reviews recent experimental progress in the physics of mercury-telluride samples under strain, which demonstrates that the surface of a three-dimensional topological insulator hosts a two-dimensional massless Dirac metal; the illuminating final contribution by David Carpentier, entitled "Topology of Bands in Solids: From Insulators to Dirac Matter", provides a geometric description of Bloch wave functions in terms of Berry phases and parallel transport, and of their topological classification in terms of invariants such as Chern numbers, and ends with a perspective on three-dimensional semi-metals as described by the Weyl equation. This book will be of broad general interest to physicists, mathematicians, and historians of science.

2D Dirac Materials

2D Dirac Materials PDF Author: Desalegne Bekuretsion Teweldebrhan
Publisher:
ISBN: 9781124772226
Category : Electron beams
Languages : en
Pages : 120

Book Description
Silicon has been reaching physical limits as the semiconductor industry moves to smaller device feature sizes, increased integration densities and faster operation speeds. There is a strong need to engineer alternative materials, which can become foundation of new computational paradigms or lead to other applications such as efficient solid-state energy conversion. Recently discovered Dirac materials, which are characterized by the liner electron dispersion, are examples of such alternative materials. In this dissertation, I investigate two representatives of Dirac materials - graphene and topological insulators. Specifically, I focus on the (i) effects of electron beam irradiation on graphene properties and (ii) electronic and thermal characteristics of exfoliated films of Bi [subscript 2] Te [subscript 3] -family of topological insulators. I carried out Raman investigation of changes in graphene crystal lattice induced by the low and medium energy electron-beam irradiation (5.20 keV). It was found that radiation exposures result in appearance of the disorder D band around 1345 cm [superscript -1]. The dependence of the ratio of the intensities of D and G peaks, I(D)/I(G), on the irradiation dose is non-monotonic suggesting graphene.s transformation to polycrystalline and then to disordered state. By controlling the irradiation dose one can change the carrier mobility and increase the resistance at the minimum conduction point. The obtained results may lead to new methods of defect engineering of graphene properties. They also have important implications for fabrication of graphene nanodevices, which involve electron beams. Bismuth telluride and related compounds are the best thermoelectric materials known today. Recently, it was determined that they reveal the topological insulator properties. We succeeded in the first "graphene-like" exfoliation of large-area crystalline films and ribbons of Bi [subscript 2] Te [subscript 3] with the thickness going down to a single quintuple. The presence of van der Waals gaps allowed us to disassemble Bi [subscript 2] Te [subscript 3] crystal into the five mono-atomic sheets consisting of Te [superscript (1)] -Bi-Te [superscript (2)] -Bi-Te [superscript (1)]. The exfoliated films had extremely low thermal conductivity and electrical resistance in the range required for thermoelectric applications. The obtained results may pave the way for producing Bi [subscript 2] Te [subscript 3] films and stacked superlattices with strong quantum confinement of charge carriers and predominantly surface transport, and allow one to obtain theoretically predicted order-of-magnitude higher thermoelectric figure-of-merit.

Reshaping of Dirac Cones in Topological Insulators and Graphene

Reshaping of Dirac Cones in Topological Insulators and Graphene PDF Author: Álvaro Díaz Fernández
Publisher: Springer Nature
ISBN: 3030615553
Category : Science
Languages : en
Pages : 183

Book Description
Dirac cones are ubiquitous to non-trivial quantum matter and are expected to boost and reshape the field of modern electronics. Particularly relevant examples where these cones arise are topological insulators and graphene. From a fundamental perspective, this thesis proposes schemes towards modifying basic properties of these cones in the aforementioned materials. The thesis begins with a brief historical introduction which is followed by an extensive chapter that endows the reader with the basic tools of symmetry and topology needed to understand the remaining text. The subsequent four chapters are devoted to the reshaping of Dirac cones by external fields and delta doping. At all times, the ideas discussed in the second chapter are always a guiding principle to understand the phenomena discussed in those four chapters. As a result, the thesis is cohesive and represents a major advance in our understanding of the physics of Dirac materials.

Electronic Properties of Rhombohedral Graphite

Electronic Properties of Rhombohedral Graphite PDF Author: Servet Ozdemir
Publisher: Springer Nature
ISBN: 3030883078
Category : Science
Languages : en
Pages : 142

Book Description
This thesis presents the first systematic electron transport investigation of rhombohedral graphite (RG) films and thus lies at the interface of graphene physics, vdW heterostructure devices and topological matter. Electron transport investigation into the rhombohedral phase of graphite was limited to a few layers of graphene due to the competing hexagonal phase being more abundant. This work reports that in exfoliated natural graphite films, rhombohedral domains of up to 50 layers can be found. In the low energy limit, these domains behave as an N-layer generalisation of graphene. Moreover, being a potential alternative to twisted bilayer graphene systems, RG films show a spontaneous metal-insulator transition, with characteristic symmetry properties that could be described by mean-field theory where superconductivity is also predicted in these low energy bands. A nodal-line semimetal in the bulk limit, RG thin films are a 3D generalisation of the simplest topological insulator model: the Su-Schrieffer-Heeger chain. Similar to the more usual topological insulators, RG films exhibit parallel conduction of bulk states, which undergo three-dimensional quantum transport that reflects bulk topology.

Electron Transport and Plasmons in Dirac Materials and in Two-dimensional Materials

Electron Transport and Plasmons in Dirac Materials and in Two-dimensional Materials PDF Author: Jhih-Sheng Wu
Publisher:
ISBN:
Category :
Languages : en
Pages : 116

Book Description
Two-dimensional materials are one-atom-thick crystals, which are stable under ambient conditions. Heterostructures by stacking of two-dimensional (2D) crystals via the van der Waals force provide a versatile platform for investigation of emergent properties of composite materials. In this thesis, I studied three 2D materials, graphene, Bi$_2$Se$_3$ and hexagonal boron nitride (hBN), of which the first two materials host 2D Dirac fermions. The core of this thesis is to study the transport and optical properties of 2D Dirac fermions interacted with their three-dimensional (3D) environments. In Chapter 2, we consider electron transport of graphene, adsorbing clusters of charged impurities. We model the clusters as circular barriers. We calculate the differential, total, and transport cross-sections for scattering of two-dimensional massless Dirac electrons by a circular barrier. For scatterer of a small radius, the cross-sections are dominated by quantum effects such as resonant scattering that can be computed using the partial-wave series. Scattering by larger size barriers is better described within the classical picture of reflection and refraction of rays, which leads to phenomena of caustics, rainbow, and critical scattering. Refraction can be negative if the potential of the scatterer is repulsive, so that a $p$-$n$ junction forms at its boundary. Qualitative differences of this case from the $n$-$N$ doping case are examined. Quantum interference effects beyond the classical ray picture are also considered, such as normal and anomalous diffraction, and also whispering-gallery resonances. Implications of these results for transport and scanned-probe experiments in graphene and topological insulators are discussed. In Chapter 3, we consider how the Dirac plasmons of Bi$_2$Se$_3$ are coupled with its phonon polaritons. Layered topological insulators, for example, Bi$_2$Se$_3$ are optically hyperbolic materials in a range of THz frequencies. Such materials possess deeply subdiffractional, highly directional collective modes: hyperbolic phonon-polaritons. In thin crystals the dispersion of such modes is split into discrete subbands and is strongly influenced by electron surface states. If the surface states are doped, then hybrid collective modes result from coupling of the phonon-polaritons with surface plasmons. The strength of the hybridization can be controlled by an external gate that varies the chemical potential of the surface states. Momentum-dependence of the plasmon-phonon coupling leads to a polaritonic analog of the Goos-Hänchen effect. Directionality of the polaritonic rays and their tunable Goos-Hänchen shift are observable via THz nanoimaging.

Electronic Properties Of Dirac And Weyl Semimetals

Electronic Properties Of Dirac And Weyl Semimetals PDF Author: Eduard V Gorbar
Publisher: World Scientific
ISBN: 9811207364
Category : Science
Languages : en
Pages : 535

Book Description
The monograph reviews various aspects of electronic properties of Dirac and Weyl semimetals. After a brief discussion of 2D Dirac semimetals, a comprehensive review of 3D materials is given. The description starts from an overview of the topological properties and symmetries of Dirac and Weyl semimetals. In addition, several low-energy models of Dirac and Weyl quasiparticles are presented. The key ab initio approaches and material realizations are given. The monograph includes detailed discussions of the surface Fermi arcs, anomalous transport properties, and collective modes of Dirac and Weyl semimetals. Superconductivity in these materials is briefly addressed.

Electronic Transport in Topological Insulator Nanostructures

Electronic Transport in Topological Insulator Nanostructures PDF Author: Seung Sae Hong
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
Topological insulators are states of quantum matter with an insulating gap in the bulk and gapless surface states. The exotic spin nature of the surface electrons, resulting in topological protection from localization, suggests unconventional applications in electronics as well as fundamental scientific interests. While these exotic states have been investigated via surface-sensitive techniques intensively, electronic transport device, crucial to realize topological electronics, has lagged behind due to material challenges in candidate materials. Topological insulator nanostructure is an attractive candidate for device applications, as the size effect and boundary conditions offer a unique way to enhance / tailor the surface electron transport. In this dissertation, we first describe the design principle of topological insulator nanomaterials, with an emphasis on bismuth selenide. Two major material challenges, dominant bulk electron contribution and low surface mobility due to surface oxidation, are discussed and the solutions via nanomaterial synthesis are achieved. Elemental doping and core-shell heterostructures are developed to suppress bulk carriers and to achieve high surface electron mobility. The high electronic mobility allows us to observe Shubnikov-de Haas oscillations originated from the surface Dirac fermions. In addition to the material development, we also investigate transport properties from helical nature of the surface electrons. 1D modes of surface electrons in bismuth selenide nanowire Aharonov-Bohm interferometers is a unique electronic state providing an opportunity to reveal helical spin nature and topological protection via transport. The helical 1D mode, directly observed near the Dirac point under half magnetic flux quantum, is robust against disorder but fragile against a magnetic field breaking time-reversal-symmetry. The newly discovered 1D helical mode is expected to open a new direction to study topological electronics, as well as future applications.

Strong and Weak Topology Probed by Surface Science

Strong and Weak Topology Probed by Surface Science PDF Author: Christian Pauly
Publisher: Springer
ISBN: 3658118113
Category : Science
Languages : en
Pages : 172

Book Description
Christian Pauly demonstrates the strong topological properties of the technologically relevant phase change materials Sb2Te3 and Ge2Sb2Te5 by using two powerful techniques for mapping the surface electronic structure: scanning tunneling spectroscopy (STS) and angle-resolved photoemission spectroscopy (ARPES). In the case of a phase change material, this opens up the possibility of switching between an insulating amorphous and a conducting topological phase on nanosecond-time scales. Moreover, the author presents first experimental results of a weak topological insulator, namely on the bismuth-based graphene-like sheet system Bi14Rh3I9, revealing a topologically protected one-dimensional edge channel as its fingerprint. The edge state is as narrow as 0.8 nm, making it extremely attractive to device physics. Those strong and weak topological insulators are a new phase of quantum matter giving rise to robust boundary states which are protected from backscattering and localization.

Introduction to Graphene-Based Nanomaterials

Introduction to Graphene-Based Nanomaterials PDF Author: Luis E. F. Foa Torres
Publisher: Cambridge University Press
ISBN: 1108476996
Category : Science
Languages : en
Pages : 479

Book Description
An introduction to the electrical and transport properties of graphene and other two-dimensional nanomaterials.