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Author: Marvin L. Cohen Publisher: Springer Science & Business Media ISBN: 364297080X Category : Science Languages : en Pages : 273
Book Description
We began planning and writing this book in the late 1970s at the suggestion of Manuel Cardona and Helmut Lotsch. We also received considerable en couragement and stimulation from colleagues. Some said there was a need for instructional material in this area while others emphasized the utility of a research text. We tried to strike a compromise. The figures, tables, and references are included to enable researchers to obtain quickly essential information in this area of semiconductor research. For instructors and stu dents, we attempt to cover some basic ideas about electronic structure and semiconductor physics with applications to real, rather than model, solids. We wish to thank our colleagues and collaborators whose research re sults and ideas are presented here. Special thanks are due to Jim Phillips who influenced us both during our formative years and afterwards. We are grateful to Sari Yamagishi for her patience and skill with the typing and production of the manuscript. Finally, we acknowledge the great patience of Helmut Lotsch and Manuel Cardona. Berkeley, CA M.L. Cohen Minneapolis, MN, J.R. Chelikowsky March 1988 VII Contents 1. Introduction............................................... 1 2. Theoretical Concepts and Methods ..................... 4 2.1 The One-Electron Model and Band Structure............ 7 2.2 Properties of En(k) ...................................... 11 3. Pseudopotentials. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 . . . . . . . . . . . . 3.1 The Empirical Pseudopotential Method.................. 20 3.2 Self-Consistent and Ab Initio Pseudopotentials ........... 25 4. Response Functions and Density of States .............. 30 4.1 Charge Density and Bonding ................... . . . . . . . . . 38 .
Author: Mukesh Kumar Jain Publisher: World Scientific Publishing Company Incorporated ISBN: 9789810210748 Category : Technology & Engineering Languages : en Pages : 589
Book Description
Each of the 23 chapters of this book is a contribution in the form of a report, a review article or a full length research paper. The first few contributions present a description of the fundamental aspects of these alloys. The next few contributions are followed by a treatment of superlattices. The later contributions describe the more important devices which can be produced using these semiconductors. The book concludes with an examination of the properties of these alloys when they are in the form of thin films
Author: Lok C. Lew Yan Voon Publisher: Universal-Publishers ISBN: 0965856445 Category : Science Languages : en Pages : 263
Book Description
This study is a theoretical investigation of the electronic and optical properties of intrinsic semiconductors using the orthogonal empirical tight binding model. An analysis of the bulk properties of semiconductors with the zincblende, diamond and rocksalt structures has been carried out. We have extended the work of others to higher order in the interaction integrals and derived new parameter sets for certain semiconductors which better fit the experimental data over the Brillouin zone. The Hamiltonian of the heterostructures is built up layer by layer from the parameters of the bulk constituents. The second part of this work examines a number of applications of the theory. We present a new microscopic derivation of the intervalley deformation potentials within the tight binding representation and computes a number of conduction-band deformation potentials of bulk semiconductors. We have also studied the electronic states in heterostructures and have shown theoretically the possibility of having barrier localization of above-barrier states in a multivalley heterostructure using a multiband calculation. Another result is the proposal for a new "type-II" lasing mechanism in short-period GaAs/AlAs superlattices. As for our work on the optical properties, a new formalism, based on the generalized Feynman-Hellmann theorem, for computing interband optical matrix elements has been obtained and has been used to compute the linear and second-order nonlinear optical properties of a number of bulk semiconductors and semiconductor heterostructures. In agreement with the one-band elective mass calculations of other groups, our more elaborate calculations show that the intersubband oscillator strengths of quantum wells can be greatly enhanced over the bulk interband values.
Author: William Barford Publisher: OUP Oxford ISBN: 0191501700 Category : Science Languages : en Pages : 320
Book Description
Conjugated polymers have important technological applications, including solar cells and light emitting devices. They are also active components in many important biological processes. In recent years there have been significant advances in our understanding of these systems, owing to both improved experimental measurements and the development of advanced computational techniques. The aim of this book is to describe and explain the electronic and optical properties of conjugated polymers. It focuses on the three key roles of electron-electron interactions, electron-nuclear coupling, and disorder in determining the character of the electronic states, and it relates these properties to experimental observations in real systems. A number of important optical and electronic processes in conjugated polymers are also described. The second edition has a more extended discussion of excitons in conjugated polymers. There is also a new chapter on the static and dynamical localization of excitons.
Author: G. Martinez Publisher: Springer Science & Business Media ISBN: 9780792320586 Category : Science Languages : en Pages : 330
Book Description
It is widely recognized that an understanding of the optical pro perties of matter will give a great deal of important information re levant to the fundamental physical properties. This is especially true in semiconductor physics for which, due to the intrinsic low screening of these materials, the optical response is quite rich. Their spectra reflect indeed as well electronic as spin or phonon transitions. This is also in the semiconductor field that artificial structures have been recently developed, showing for the first time specific physical properties related to the low dimentionality of the electronic and vi bronic properties : with this respect the quantum and fractional quan tum Hall effects are among the most well known aspects. The associated reduced screening is also a clear manifestation of these aspects and as such favors new optical properties or at least significantly enhan ces some of them. For all these reasons, it appeared necessary to try to review in a global way what the optical investigation has brought today about the understanding of the physics of semiconductors. This volume collects the papers presented at the NATO Advanced study Inst i tut e on "Optical Properties of Semiconductors" held at the Ettore Majorana Centre, Erice, Sicily on March 9th to 20th, 1992. This school brought together 70 scientists active in research related to optical properties of semiconductors. There were 12 lecturers who pro vided the main contributions .
Author: Victor N Fleurov Publisher: World Scientific ISBN: 9814501603 Category : Science Languages : en Pages : 361
Book Description
This book discusses the theory of the electron states of transition metal impurities in semiconductors in connection with the general theory of isoelectronic impurities. It contains brief descriptions of the experimental data available for transition metal impurities belonging to iron, palladium and platinum groups and for rare-earth impurities in elemental semiconductors (III-IV, II-VI and IV-VI compounds) and in several oxide compounds (TiO2, BaTiO3, SrTiO3). Also included are applications of the theory to the optical, electrical and resonance properties of semiconductors doped by the transition metal impurities.The book presents a theory unifying previously proposed ligand-field and band descriptions of transition metal impurities. It describes the theory in the context of the general theory of neutral impurities in semiconductors and demonstrates the capabilities of this description to explain the basic experimental properties of semiconductors doped by transition metal impurities. A detailed discussion of various experimental results and their theoretical interpretation is carried out.This book comprises three parts. The first two parts consider several exactly solvable models and describe numerical techniques. All the models and simulations constitute a general pattern describing transition metal and rare-earth impurities in semiconductors. The final part uses this theory in order to address various experimentally observed properties of these systems.
Author: David L. Greenaway Publisher: Elsevier ISBN: 1483151867 Category : Science Languages : en Pages : 174
Book Description
Optical Properties and Band Structure of Semiconductors, Volume 1 presents the experimental studies of the fundamental energy band structure of semiconductors and insulators. This book provides detailed information of the available measurement methods and results for a large number of both cubic and non-cubic materials. Comprised of 10 chapters, this volume begins with an overview of the fundamental band structure of semiconductors. This text then discusses the instrumentation and methods available for the measurement of absorption coefficient, absolute reflection coefficient, and other optical properties of insulators and semiconductors primarily in their fundamental region. Other chapters consider the interband transitions in the one-electron approximation. The final chapter deals with the equivalence of the transverse and longitudinal dielectric constants in the frequency range under consideration. This book is a valuable resource for solid state physicists. Readers and researchers with interest in the electron and optical properties of semiconductors and insulators will also find this book useful.
Author: Walter A Harrison Publisher: World Scientific Publishing Company ISBN: 9813102209 Category : Science Languages : en Pages : 864
Book Description
This is a revised edition of the 1999 text on the electronic structure and properties of solids, similar in spirit to the well-known 1980 text Electronic Structure and the Properties of Solids. The revisions include an added chapter on glasses, and rewritten sections on spin-orbit coupling, magnetic alloys, and actinides. The text covers covalent semiconductors, ionic insulators, simple metals, and transition-metal and f-shell-metal systems. It focuses on the most important aspects of each system, making what approximations are necessary in order to proceed analytically and obtain formulae for the properties. Such back-of-the-envelope formulae, which display the dependence of any property on the parameters of the system, are characteristic of Harrison's approach to electronic structure, as is his simple presentation and his provision of all the needed parameters.In spite of the diversity of systems and materials, the approach is systematic and coherent, combining the tight-binding (or atomic) picture with the pseudopotential (or free-electron) picture. This provides parameters — the empty-core radii as well as the covalent energies — and conceptual bases for estimating the various properties of all these systems. Extensive tables of parameters and properties are included.The book has been written as a text, with problems at the end of each chapter, and others can readily be generated by asking for estimates of different properties, or different materials, than those treated in the text. In fact, the ease of generating interesting problems reflects the extraordinary utility and simplicity of the methods introduced. Developments since the 1980 publication have made the theory simpler and much more accurate, besides allowing much wider application.
Author: Walter A. Harrison Publisher: Courier Corporation ISBN: 0486141780 Category : Science Languages : en Pages : 610
Book Description
This text offers basic understanding of the electronic structure of covalent and ionic solids, simple metals, transition metals and their compounds; also explains how to calculate dielectric, conducting, bonding properties.
Author: Marvin L. Cohen
Author: Marvin L. Cohen
Author: Mukesh Kumar Jain
Author: Lok C. Lew Yan Voon
Author: William Barford
Author: G. Martinez
Author: Victor N Fleurov
Author: David L. Greenaway
Author: Walter A Harrison
Author: D. Birkedal
Author: Walter A. Harrison