Author: C. CalandraPublisher:
ISBN:
Category :
Languages : en
Pages : 94
Book Description
Electronic Properties of Silicon-transition Metal Interface Compounds
Author: C. CalandraSurface Science Reports
Author: Electronic Properties of Semiconductor Interfaces
Author: Winfried MönchPublisher: Springer Science & Business Media
ISBN: 3662069458
Category : Technology & Engineering
Languages : en
Pages : 269
Book Description
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
The Electronic Properties of Semiconductors, Semiconductor-simple Metal Interfaces, and Transition Metal Alloys
Author: Jeffrey Steven NelsonPublisher:
ISBN:
Category :
Languages : en
Pages : 200
Book Description
The electronic properties of semiconductors, semiconductor-simple metal interfaces, and transition metal alloys
Author: Jeffrey S. NelsonElectronic Properties of Transition Metal Doped Silicon Clusters
Author: Theoretical Studies of the Electronic Properties of Transition Metals and Transition Metal Compounds
Author: Joseph Francis AlwardPublisher:
ISBN:
Category :
Languages : en
Pages : 260
Book Description
Transition Metal Impurities in Semiconductors
Author: K. A. KikoinPublisher: World Scientific
ISBN: 9789810218836
Category : Technology & Engineering
Languages : en
Pages : 368
Book Description
This book discusses the theory of the electron states of transition metal impurities in semiconductors in connection with the general theory of isoelectronic impurities. It contains brief descriptions of the experimental data available for transition metal impurities belonging to iron, palladium and platinum groups and for rare-earth impurities in elemental semiconductors (III-IV, II-VI and IV-VI compounds) and in several oxide compounds (Ti2, BaTiO3, SrTiO3). Also included are applications of the theory to the optical, electrical and resonance properties of semiconductors doped by the transition metal impurities.The book presents a theory unifying previously proposed ligand-field and band descriptions of transition metal impurities. It describes the theory in the context of the general theory of neutral impurities in semiconductors and demonstrates the capabilities of this description to explain the basic experimental properties of semiconductors doped by transition metal impurities. A detailed discussion of various experimental results and their theoretical interpretation is carried out.This book comprises three parts. The first two parts consider several exactly solvable models and describe numerical techniques. All the models and simulations constitute a general pattern describing transition metal and rare-earth impurities in semiconductors. The final part uses this theory in order to address various experimentally observed properties of these systems.
Silicides: Fundamentals & Applications
Author: Francois D'heurlePublisher: World Scientific
ISBN: 9814492183
Category : Science
Languages : en
Pages : 390
Book Description
Silicides were introduced into the technology of electronic devices some thirty years ago; since then, they have been continuously used to form both ohmic and rectifying contacts to silicon. Silicides are also important for other applications (thermoelectric devices and structural applications, such as jet engines), but it is not easy to find an updated reference containing both their basic properties, either chemical or physical, and the latest applications.The 16th Course of the International School of Solid State Physics, held in Erice (Italy) in the late spring of 1999, was intended to break artificial barriers between disciplines, and to gather people concerned with the properties and applications of silicides, regardless of the formal fields to which they belong, or of the practical goals they pursue. This book is therefore concerned with theory as well as applications, metallurgy as well as physics, and materials science as well as microelectronics.
Semiconductor Physics
Author: Karl W. BöerPublisher: Springer Nature
ISBN: 3031182863
Category : Technology & Engineering
Languages : en
Pages : 1408
Book Description
This handbook gives a complete and detailed survey of the field of semiconductor physics. It addresses every fundamental principle, the most important research topics and results, as well as conventional and emerging new areas of application. Additionally it provides all essential reference material on crystalline bulk, low-dimensional, and amorphous semiconductors, including valuable data on their optical, transport, and dynamic properties. This updated and extended second edition includes essential coverage of rapidly advancing areas in semiconductor physics, such as topological insulators, quantum optics, magnetic nanostructures and spintronic systems. Richly illustrated and authored by a duo of internationally acclaimed experts in solar energy and semiconductor physics, this handbook delivers in-depth treatment of the field, reflecting a combined experience spanning several decades as both researchers and educators. Offering a unique perspective on many issues, Semiconductor Physics is an invaluable reference for physicists, materials scientists and engineers throughout academia and industry.