Electronic Properties of Semiconductor Superlattices, Amorphous Semiconductors, and Metal-semiconductor Interfaces PDF Download

Author: Lin Hung Yang
Publisher:
ISBN:
Category :
Languages : en
Pages : 166

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Author: Winfried Mönch
Publisher: Springer Science & Business Media
ISBN: 3662069458
Category : Technology & Engineering
Languages : en
Pages : 269

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Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Author: Kazuo Morigaki
Publisher: World Scientific
ISBN: 9789810213817
Category : Technology & Engineering
Languages : en
Pages : 440

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This is a useful textbook for graduate students in the fields of solid state physics and chemistry as well as electronic engineering. Presenting the fundamentals of amorphous semiconductors clearly, it will be essential reading for young scientists intending to develop new preparation techniques for more ideal amorphous semiconductors e.g. a-Si: H, to fabricate stable and efficient solar cells and thin film transistors and new artificial amorphous materials such as multilayers for quantum devices.A large portion is devoted to the latest developments of amorphous semiconductors including electronic properties of a-Si: H, nature of weak bonds and gap states in a-Si: H, mechanisms for light-induced defect creation in a-Si: H and chalcogenides, quantum phenomena in multilayer fi

Author: Kazuo Morigaki
Publisher: John Wiley & Sons
ISBN: 1118757920
Category : Technology & Engineering
Languages : en
Pages : 286

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Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. Developed from both a theoretical and experimental viewpoint Deals with, amongst others, preparation techniques, structural, optical and electronic properties, and light induced phenomena Explores different types of amorphous semiconductors including amorphous silicon, amorphous semiconducting oxides and chalcogenide glasses Applications include solar cells, thin film transistors, sensors, optical memory devices and flat screen devices including televisions

Author: C.Y. Fong
Publisher: Springer Science & Business Media
ISBN: 1468455532
Category : Science
Languages : en
Pages : 350

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A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el~ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.

Author: A. Stella
Publisher: Elsevier
ISBN: 1483290360
Category : Science
Languages : en
Pages : 496

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This book is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications. The papers deal with the interaction of theory, experiments and applications within the field, and the outstanding contributions are from both the academic and industrial worlds.

Author: Holger T. Grahn
Publisher: World Scientific
ISBN: 9789810220617
Category : Technology & Engineering
Languages : en
Pages : 270

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This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier-Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths.

Author: Winfried Monch
Publisher:
ISBN: 9783662069462
Category :
Languages : en
Pages : 280

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Author: Winfried Mönch
Publisher: Springer Science & Business Media
ISBN: 9400906579
Category : Science
Languages : en
Pages : 302

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Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-

Author: Tōkyō Daigaku. Institute for Solid State Physics
Publisher:
ISBN:
Category :
Languages : en
Pages :

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