Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download VLSI Design and Test PDF full book. Access full book title VLSI Design and Test by S. Rajaram. Download full books in PDF and EPUB format.
Author: S. Rajaram Publisher: Springer ISBN: 9811359504 Category : Computers Languages : en Pages : 728
Book Description
This book constitutes the refereed proceedings of the 22st International Symposium on VLSI Design and Test, VDAT 2018, held in Madurai, India, in June 2018. The 39 full papers and 11 short papers presented together with 8 poster papers were carefully reviewed and selected from 231 submissions. The papers are organized in topical sections named: digital design; analog and mixed signal design; hardware security; micro bio-fluidics; VLSI testing; analog circuits and devices; network-on-chip; memory; quantum computing and NoC; sensors and interfaces.
Author: Suman Lata Tripathi Publisher: CRC Press ISBN: 1000330095 Category : Technology & Engineering Languages : en Pages : 435
Book Description
The increasing demand in home and industry for electronic devices has encouraged designers and researchers to investigate new devices and circuits using new materials that can perform several tasks efficiently with low IC (integrated circuit) area and low power consumption. Furthermore, the increasing demand for portable devices intensifies the search to design sensor elements, an efficient storage cell, and large-capacity memory elements. Electrical and Electronic Devices, Circuits and Materials: Design and Applications will assist the development of basic concepts and fundamentals behind devices, circuits, materials, and systems. This book will allow its readers to develop their understanding of new materials to improve device performance with even smaller dimensions and lower costs. Additionally, this book covers major challenges in MEMS (micro-electromechanical system)-based device and thin-film fabrication and characterization, including their applications in different fields such as sensors, actuators, and biomedical engineering. Key Features: Assists researchers working on devices and circuits to correlate their work with other requirements of advanced electronic systems. Offers guidance for application-oriented electrical and electronic device and circuit design for future energy-efficient systems. Encourages awareness of the international standards for electrical and electronic device and circuit design. Organized into 23 chapters, Electrical and Electronic Devices, Circuits and Materials: Design and Applications will create a foundation to generate new electrical and electronic devices and their applications. It will be of vital significance for students and researchers seeking to establish the key parameters for future work.
Author: S. Rajaram Publisher: Springer ISBN: 9811359504 Category : Computers Languages : en Pages : 728
Book Description
This book constitutes the refereed proceedings of the 22st International Symposium on VLSI Design and Test, VDAT 2018, held in Madurai, India, in June 2018. The 39 full papers and 11 short papers presented together with 8 poster papers were carefully reviewed and selected from 231 submissions. The papers are organized in topical sections named: digital design; analog and mixed signal design; hardware security; micro bio-fluidics; VLSI testing; analog circuits and devices; network-on-chip; memory; quantum computing and NoC; sensors and interfaces.
Author: Trupti Ranjan Lenka Publisher: Springer Nature ISBN: 9811923086 Category : Technology & Engineering Languages : en Pages : 519
Book Description
This book presents select proceedings of the International Conference on Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS-2022). The book includes cutting-edge research papers in the emerging fields of micro and nanoelectronics devices, circuits, and systems from experts working in these fields over the last decade. The book is a unique collection of chapters from different areas with a common theme and is immensely useful to academic researchers and practitioners in the industry who work in this field.
Author: Uttam Singisetti Publisher: World Scientific ISBN: 9811216495 Category : Technology & Engineering Languages : en Pages : 258
Book Description
'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Author: D. Nirmal Publisher: CRC Press ISBN: 0429862539 Category : Science Languages : en Pages : 430
Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Rino Micheloni Publisher: Springer ISBN: 331951735X Category : Technology & Engineering Languages : en Pages : 177
Book Description
This book introduces simulation tools and strategies for complex systems of solid-state-drives (SSDs) which consist of a flash multi-core microcontroller plus NAND flash memories. It provides a broad overview of the most popular simulation tools, with special focus on open source solutions. VSSIM, NANDFlashSim and DiskSim are benchmarked against performances of real SSDs under different traffic workloads. PROs and CONs of each simulator are analyzed, and it is clearly indicated which kind of answers each of them can give and at a what price. It is explained, that speed and precision do not go hand in hand, and it is important to understand when to simulate what, and with which tool. Being able to simulate SSD’s performances is mandatory to meet time-to-market, together with product cost and quality. Over the last few years the authors developed an advanced simulator named “SSDExplorer” which has been used to evaluate multiple phenomena with great accuracy, from QoS (Quality Of Service) to Read Retry, from LDPC Soft Information to power, from Flash aging to FTL. SSD simulators are also addressed in a broader context in this book, i.e. the analysis of what happens when SSDs are connected to the OS (Operating System) and to the end-user application (for example, a database search). The authors walk the reader through the full simulation flow of a real system-level by combining SSD Explorer with the QEMU virtual platform. The reader will be impressed by the level of know-how and the combination of models that such simulations are asking for.
Author: Patrick Fay Publisher: Springer ISBN: 3030202089 Category : Technology & Engineering Languages : en Pages : 308
Book Description
This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.
Author: Brinda Bhowmick Publisher: Cambridge Scholars Publishing ISBN: 1527507041 Category : Technology & Engineering Languages : en Pages : 136
Book Description
This book covers the physical principles, modelling, fabrication and applications of Tunnel Field Effect Transistors (TFETs) and Fin Field Effect Transistors (FinFETs). This is intended to act as a reference for undergraduate, postgraduate and research scholars belonging to backgrounds of Applied Physics, Electrical and Electronics Engineering and Material Science. Of paramount importance is the need to understand the simulation aspects of these devices, the validity of mathematical models, basics on fabrication and details of applications of these nanoscale devices. The presentation of the book assumes that the reader has fundamental concepts of semiconductor device physics and electronic circuits. A course such as the one this book is intended to accompany and motivate both students and scholars to get involved in the research on TFETs and FinFETs. Further, this book can act as a reference for device engineers and scientists who need to get updated information on device and technological developments.
Author: Steven Voldman Publisher: BoD – Books on Demand ISBN: 1789848962 Category : Science Languages : en Pages : 104
Book Description
As we enter the nanoelectronics era, electrostatic discharge (ESD) phenomena is an important issue for everything from micro-electronics to nanostructures. This book provides insight into the operation and design of micro-gaps and nanogenerators with chapters on low capacitance ESD design in advanced technologies, electrical breakdown in micro-gaps, nanogenerators from ESD, and theoretical prediction and optimization of triboelectric nanogenerators. The information contained herein will prove useful for for engineers and scientists that have an interest in ESD physics and design.
Author: S. Rajaram
Author: Suman Lata Tripathi
Author: S. Rajaram
Author: Trupti Ranjan Lenka
Author: Uttam Singisetti
Author: D. Nirmal
Author: Rino Micheloni
Author: Patrick Fay
Author: Brinda Bhowmick
Author: Steven Voldman
Author: V. V. S. S. S. Chakravarthy