Electron-beam, X-ray, and Ion-beam Technology PDF Download

Author: Arnold W. Yanof
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 404

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Author: Douglas J. Resnick
Publisher: SPIE-International Society for Optical Engineering
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 364

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Author: Miklos Szilagyi
Publisher: Springer Science & Business Media
ISBN: 1461309239
Category : Technology & Engineering
Languages : en
Pages : 550

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The field of electron and ion optics is based on the analogy between geometrical light optics and the motion of charged particles in electromagnetic fields. The spectacular development of the electron microscope clearly shows the possibilities of image formation by charged particles of wavelength much shorter than that of visible light. As new applications such as particle accelerators, cathode ray tubes, mass and energy spectrometers, microwave tubes, scanning-type analytical instruments, heavy beam technologies, etc. emerged, the scope of particle beam optics has been exten ded to the formation of fine probes. The goal is to concentrate as many particles as possible in as small a volume as possible. Fabrication of microcircuits is a good example of the growing importance of this field. The current trend is towards increased circuit complexity and pattern density. Because of the diffraction limitation of processes using optical photons and the technological difficulties connected with x-ray processes, charged particle beams are becoming popular. With them it is possible to write directly on a wafer under computer control, without using a mask. Focused ion beams offer especially great possibilities in the submicron region. Therefore, electron and ion beam technologies will most probably playa very important role in the next twenty years or so.

Author: Phillip D. Blais
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 294

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Author: Alfred Wagner
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 152

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Author: Ishaq Ahmad
Publisher: BoD – Books on Demand
ISBN: 178923414X
Category : Science
Languages : en
Pages : 190

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Ion beam of various energies is a standard research tool in many areas of science, from basic physics to diverse areas in space science and technology, device fabrications, materials science, environment science, and medical sciences. It is an advance and versatile tool to frequently discover applications across a broad range of disciplines and fields. Moreover, scientists are continuously improving the ion beam sources and accelerators to explore ion beam at the forefront of scientific endeavours. This book provides a glance view on MeV ion beam applications, focused ion beam generation and its applications as well as practical applications of ion implantation.

Author:
Publisher:
ISBN:
Category : Ion beam lithography
Languages : en
Pages : 508

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Author: Vivek Bakshi
Publisher: SPIE Press
ISBN: 0819469645
Category : Art
Languages : en
Pages : 704

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Editorial Review Dr. Bakshi has compiled a thorough, clear reference text covering the important fields of EUV lithography for high-volume manufacturing. This book has resulted from his many years of experience in EUVL development and from teaching this subject to future specialists. The book proceeds from an historical perspective of EUV lithography, through source technology, optics, projection system design, mask, resist, and patterning performance, to cost of ownership. Each section contains worked examples, a comprehensive review of challenges, and relevant citations for those who wish to further investigate the subject matter. Dr. Bakshi succeeds in presenting sometimes unfamiliar material in a very clear manner. This book is also valuable as a teaching tool. It has become an instant classic and far surpasses others in the EUVL field. --Dr. Akira Endo, Chief Development Manager, Gigaphoton Inc. Description Extreme ultraviolet lithography (EUVL) is the principal lithography technology aiming to manufacture computer chips beyond the current 193-nm-based optical lithography, and recent progress has been made on several fronts: EUV light sources, optics, optics metrology, contamination control, masks and mask handling, and resists. This comprehensive volume is comprised of contributions from the world's leading EUVL researchers and provides all of the critical information needed by practitioners and those wanting an introduction to the field. Interest in EUVL technology continues to increase, and this volume provides the foundation required for understanding and applying this exciting technology. About the editor of EUV Lithography Dr. Vivek Bakshi previously served as a senior member of the technical staff at SEMATECH; he is now president of EUV Litho, Inc., in Austin, Texas.

Author: Joseph Goldstein
Publisher: Springer Science & Business Media
ISBN: 1461332737
Category : Science
Languages : en
Pages : 679

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This book has evolved by processes of selection and expansion from its predecessor, Practical Scanning Electron Microscopy (PSEM), published by Plenum Press in 1975. The interaction of the authors with students at the Short Course on Scanning Electron Microscopy and X-Ray Microanalysis held annually at Lehigh University has helped greatly in developing this textbook. The material has been chosen to provide a student with a general introduction to the techniques of scanning electron microscopy and x-ray microanalysis suitable for application in such fields as biology, geology, solid state physics, and materials science. Following the format of PSEM, this book gives the student a basic knowledge of (1) the user-controlled functions of the electron optics of the scanning electron microscope and electron microprobe, (2) the characteristics of electron-beam-sample inter actions, (3) image formation and interpretation, (4) x-ray spectrometry, and (5) quantitative x-ray microanalysis. Each of these topics has been updated and in most cases expanded over the material presented in PSEM in order to give the reader sufficient coverage to understand these topics and apply the information in the laboratory. Throughout the text, we have attempted to emphasize practical aspects of the techniques, describing those instru ment parameters which the microscopist can and must manipulate to obtain optimum information from the specimen. Certain areas in particular have been expanded in response to their increasing importance in the SEM field. Thus energy-dispersive x-ray spectrometry, which has undergone a tremendous surge in growth, is treated in substantial detail.

Author: Phillip D. Blais
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 280

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