Author: Brian M. KeyesPublisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 128
Book Description
Electrical Transport Properties of Amorphous Silicon-germanium-boron Alloys Prepared by Rf Magnetron Sputtering
Author: Brian M. KeyesPublisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 128
Book Description
Properties of Amorphous Silicon
Author: Publisher: INSPEC
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 688
Book Description
Solar Energy Update
Author: Metals Abstracts
Author: Physics Briefs
Author: Electrical & Electronics Abstracts
Author: Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1948
Book Description
Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 14
Book Description
This report describes the first year of a continuing research study to understand how recombination, trapping, and band-mobility modification affecting the electronic properties of amorphous semiconductors can be measured, characterized, and described by an appropriate spectrum of defect states, and how light-induced defects in a-Si:H and native defects in a-SiGe:H affect transport properties in these materials. The objective was to determine how the Staebler-Wronski defects affect the electronic processes in a-Si:H and a-SiGe:H films. To do this, electroluminescence (EL) and forward bias current in p-i-n devices (i-layer thickness> 2?m) were studied both experimentally and theoretically before and after light soaking. A simple picture was developed to compare forward bias current to the EL signal. The result was unexpected: the product of the final current times the rise time was not constant before and after light soaking as expected from the concept of gain band width, but instead changed radically. The rise time tx increased by more than one order of magnitude while the final current I{sub f} did not change significantly with light soaking. On the other hand the I{sub f}tx product did hold close to a constant when only the applied voltage changed.
Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys. Annual Subcontract Report, 1 February 1991--31 January 1992
Author: The Transactions of the Institute of Electronics and Communications Engineers of Japan
Author: Denshi Tsūshin GakkaiPublisher:
ISBN:
Category : Computer science
Languages : en
Pages : 994
Book Description
Author: