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Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
The current transport mechanisms in metal-oxide-semiconductor (MOS) capacitors have been studied. The devices used in this study have characterized by current-voltage analyses. Physical parameter extractions and computer generated fit methods have been applied to experimental data. Two devices have been investigated: A relatively thick oxide (125 nm) and an ultra-thin oxide (3 nm) MOS structures. The voltage and temperature dependence of these devices have been explained by using present current transport models.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
The current transport mechanisms in metal-oxide-semiconductor (MOS) capacitors have been studied. The devices used in this study have characterized by current-voltage analyses. Physical parameter extractions and computer generated fit methods have been applied to experimental data. Two devices have been investigated: A relatively thick oxide (125 nm) and an ultra-thin oxide (3 nm) MOS structures. The voltage and temperature dependence of these devices have been explained by using present current transport models.
Author: Bernard Pichaud Publisher: Trans Tech Publications Ltd ISBN: 303813029X Category : Technology & Engineering Languages : en Pages : 830
Book Description
Volume is indexed by Thomson Reuters CPCI-S (WoS). This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at La Badine at the Giens peninsula south of France.
Author: Simon M. Sze Publisher: John Wiley & Sons ISBN: 1119618002 Category : Technology & Engineering Languages : en Pages : 944
Book Description
The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Author: Ming He Publisher: Springer Science & Business Media ISBN: 1461418127 Category : Technology & Engineering Languages : en Pages : 155
Book Description
Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.
Author: Aurélien Maréchal Publisher: ISBN: Category : Languages : en Pages : 0
Book Description
Over two decades of technological progresses in growth quality, doping control and device processing have led to the emergence of new potentialities for power electronic applications. As diamond represents the ultimate semiconductor owing to its superior physical properties, efforts have been conducted to develop various electronic devices, such as Schottky diodes, field effect transistors, bipolar transistor, p-i-n junctions...As a prerequisite to the development of new generation diamond power devices, on one side, is the development of simulation tools able to anticipate the device electrical properties as well as its architecture in order to take full advantage of the material physical properties. On the other hand, experimental study of the gate contact, the second building block of the transistor, is fundamental in order to develop high performance devices. In this regard, one can consider several open questions: (i) Are the simulation tools able to take into account the specificities of diamond to model electrical devices? (ii) Is the aluminum oxide suitable to develop a MOSFET gate contact? (iii) If so, is the oxide/diamond interface of good enough quality? (iv) Is the fabrication of a diamond MOSFET a technological issue?This PhD project, attend to answer these questions and pave the way towards the inversion mode MOSFET.Emphasize on the diamond physical properties will help to understand why this material is the ultimate WBG semiconductor. State of the art diamond devices will be presented focusing on field effect transistors. A complementary topic for the development of new generation diamond power device is the anticipation of device electrical properties and architecture through finite element base simulation software. Thus the need for reliable simulation tools will be presented.On one hand, the main models implemented in the simulation tools will be presented and emphasize on the diamond electrical properties will be given. For the simulation of diamond metal-oxide-semiconductor field effect transistor (MOSFET), the study of two building blocks is required: the p-n junction and the gate contact. The later ideal properties will be presented while the former will serve as a basis for the calibration of the physical parameters implemented in the finite element based software. Generation-recombination models influence on the simulated p-n junction electrical properties will be discussed. Finally, the simulation of the electrical properties of a diamond metal-oxide-semiconductor field effect transistor (MOSFET) will be shown.On the other hand, focus will be made on diamond metal-oxide-semiconductor capacitor (MOSCAP) fabrication and electrical characterization. Specifically, the interfacial band configuration of the Al2O3/oxygen-terminated diamond (O-diamond) has been investigated using X-ray photoelectron spectroscopy. The results allowed establishing the band diagram of the Al2O3/O-diamond heterostructure. Then, the electrical properties of the diamond MOSCAP will be shown. Specifically, investigation of the interface states density revealed the pinning of the Fermi level at the interface between the Al2O3 and the O-diamond. Moreover, the leakage currents through the Al2O3 layer will be discussed in terms of temperature dependent trap assisted tunneling of holes from the diamond layer to the top gate contact. Finally, the electrical characterization of the first diamond MOSFET, performed at the National Institute for Advanced Industrial Science and Technology (AIST) in Japan, will be presented. Even if this first attempt was unsuccessful, it is promising for the development of diamond MOSFET since the demonstration of the actual realization of the device is clearly established.
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Author: C. T. Sah
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Author: Allen Pang-I Ho
Author: Md. Tashfin Zayed Hossain
Author: Bernard Pichaud
Author: Simon M. Sze
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Author: Ming He
Author: Aurélien Maréchal