Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors PDF full book. Access full book title Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors by Mengqi Fu. Download full books in PDF and EPUB format.
Author: Mengqi Fu Publisher: Springer ISBN: 9811334447 Category : Science Languages : en Pages : 102
Book Description
This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Author: Mengqi Fu Publisher: Springer ISBN: 9811334447 Category : Science Languages : en Pages : 102
Book Description
This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Author: Alex Chi-Wei Tseng Publisher: ISBN: Category : Languages : en Pages : 0
Book Description
Chemical sensors based on field-effect transistors were fabricated from hundreds of aligned indium arsenide nanowires which show promise for high performance based on their high electron mobility and charge sensitivity. Sensing responses to analytes in vapour and solution phases were collected from these multi-wire devices via real-time current measurements and parameters extracted from electrical transport characterization. In the vapour phase, a linear response to acetic acid was observed in surface charge densities determined from a model for the sub-threshold behaviour. These responses distinguished between strongly chemisorptive bonding of acetic acid versus weaker bonding of methanol and 2-butanone. In the solution phase, near-Nernstian sensitivity to sodium ions of a crown ether functionalized, fluorosilicone membrane was determined from the threshold voltage and hysteresis in transport characteristics. A Nernst-Planck-Poisson model was investigated to interpret the electro-diffusive processes but did not accurately capture the electric field dependence. Suggestions to address the shortcomings are given.
Author: Rohit Dhiman Publisher: CRC Press ISBN: 1000778061 Category : Technology & Engineering Languages : en Pages : 255
Book Description
The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits. Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.
Author: Guozhen Shen Publisher: Springer ISBN: 9811323674 Category : Technology & Engineering Languages : en Pages : 393
Book Description
This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.
Author: Efstathios I. Meletis Publisher: Trans Tech Publications Ltd ISBN: 3036414886 Category : Science Languages : en Pages : 161
Book Description
This volume of the "Journal of Nano Research" includes peer-reviewed articles reflecting the practical research results in the synthesis and properties analysis of nanomaterials and nanoparticles for various engineering goals - photocatalytic applications, micro- and optoelectronics, photovoltaic and electrochemical use in solar cells and energy storage devices, for applications in biomedicine, creating protective coatings, etc. The presented articles collection will be helpful to specialists from many branches of engineering whose activity is related to nanomaterials and nanotechnologies.
Author: Harish Narendar Publisher: ISBN: Category : Languages : en Pages : 113
Book Description
As device dimensions continue to shrink into the nanometer length regime, conventional complementary metal-oxide semiconductor (CMOS) technology will approach its fundamental physical limits. Further miniaturization based on conventional scaling appears neither technically nor economically feasible. New strategies, including the use of novel materials and one-dimensional device concepts, innovative device architectures, and smart integration schemes need to be explored. They are crucial to extending current capabilities and maintaining momentum beyond the end of the technology roadmap. Semiconducting nanowires are an attractive and viable option for channel structures. By virtue of their potential one-dimensionality, such nanoscale structures introduce quantum confinement effects, thus enabling new functionalities and device concepts. In this thesis we study performance limits of Indium Arsenide nanowire Field Effect Transistors (InAs NWFETs) in a Gate All Around (GAA) structure and examine its upper limits of performance. InAs in particular is an attractive candidate for NW-based electronic devices because of its very high electron mobility at room temperature of 30,000 cm2/Vs in comparison to silicon's mobility of 1480 cm2/Vs. The device simulations were carried out using MultiGate Nanowire (Nanowire MG) simulator made available at NanoHUB (www.nanohub.org) by Network for Computational Nanotechnology (NCN). The InAs NWFET was simulated for variations in channel diameter, channel length, oxide thickness and the corresponding Id -- Vg characteristics were analyzed. Short Channel Effects (SCEs) namely Drain Induced Barrier Lowering (DIBL) and threshold voltage roll off were studied. Sub-threshold slope and ON/OFF current variations were analyzed for variations in device dimensions. Finally the device characteristics of Silicon Nanowire Field Effect Transistors (Si NWFETs) were simulated for the same variations in channel diameter, channel length and oxide thickness and a comparative study of the device performance between InAs NWFET and Si NWFET was carried out to assess the effect of varying the channel material system. It was concluded that Silicon NWFET showed higher immunity towards threshold voltage roll off with scaling in channel length and exhibited better sub-threshold slopes for the same device structure in comparison to the InAs NWFET. Also it was observed that Silicon NWFET operated with lower leakage currents compared to InAs NWFET. Overall it was concluded that SiNWFET exhibited higher immunity towards short channel effects while InAs NWFET showed higher drive currents in the order of 0.10x10^(−3) A/ [mu] m compared to 8.4x10^(−6) A/ [mu] m which would translate to higher switching speeds.
Author: Jianye Li Publisher: Bentham Science Publishers ISBN: 1608050521 Category : Technology & Engineering Languages : en Pages : 186
Book Description
"Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"
Author: Jean-Pierre Colinge Publisher: Cambridge University Press ISBN: 1316558622 Category : Technology & Engineering Languages : en Pages : 269
Book Description
From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in academia and industry.
Author: Kulkarni, Shrikaant Publisher: IGI Global ISBN: Category : Technology & Engineering Languages : en Pages : 462
Book Description
As the global community confronts challenges in energy, environment, health, agriculture, industry, and construction, the significance of sustainable materials becomes paramount. The looming specter of resource depletion necessitates a paradigm shift, urging researchers and engineers to anticipate future needs and forge materials that align with evolving requirements. Next Generation Materials for Sustainable Engineering underscores the urgency of conserving resources and provides a blueprint for achieving this through judicious and sustainable use. From polymers to alloys, nanocomposites to biomaterials, this book traverses the expansive landscape of materials, deciphering their structures and properties with an eye toward sustainability. The relentless pursuit of innovation in synthesis protocols takes center stage, unveiling pathways to creating novel materials. The chapters dedicated to specific material applications, such as spintronics, nanowires, phase change materials, and nanocomposites, offer a detailed panorama of the latest advancements. This book bridges the gap between theoretical understanding and practical applications by exploring materials for renewable energy, electronic devices, artificial photosynthesis, lithium-sulfur batteries, supercapacitors, and biomedical applications. The book serves as a beacon for academicians, researchers, and material scientists, guiding them through state-of-the-art developments, emerging trends, and challenges in material science and engineering.
Author: Publisher: Elsevier ISBN: 0128133546 Category : Science Languages : en Pages : 476
Book Description
Nanoelectronics: Devices, Circuits and Systems explores current and emerging trends in the field of nanoelectronics, from both a devices-to-circuits and circuits-to-systems perspective. It covers a wide spectrum and detailed discussion on the field of nanoelectronic devices, circuits and systems. This book presents an in-depth analysis and description of electron transport phenomenon at nanoscale dimensions. Both qualitative and analytical approaches are taken to explore the devices, circuit functionalities and their system applications at deep submicron and nanoscale levels. Recent devices, including FinFET, Tunnel FET, and emerging materials, including graphene, and its applications are discussed. In addition, a chapter on advanced VLSI interconnects gives clear insight to the importance of these nano-transmission lines in determining the overall IC performance. The importance of integration of optics with electronics is elucidated in the optoelectronics and photonic integrated circuit sections of this book. This book provides valuable resource materials for scientists and electrical engineers who want to learn more about nanoscale electronic materials and how they are used. Shows how electronic transport works at the nanoscale level Demonstrates how nanotechnology can help engineers create more effective circuits and systems Assesses the most commonly used nanoelectronic devices, explaining which is best for different situations
Author: Mengqi Fu
Author: Mengqi Fu
Author: Alex Chi-Wei Tseng
Author: Rohit Dhiman
Author: Guozhen Shen
Author: Efstathios I. Meletis
Author: Harish Narendar
Author: Jianye Li
Author: Jean-Pierre Colinge
Author: Kulkarni, Shrikaant
Author: