Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices PDF Download

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ISBN:
Category :
Languages : en
Pages : 12

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Author: K. N. Bhat
Publisher: Alpha Science Int'l Ltd.
ISBN: 9788173195679
Category : Science
Languages : en
Pages : 1310

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Contributed papers of the workshop held at IIT, Madras, in 2003.

Author: Robert Perret
Publisher: John Wiley & Sons
ISBN: 1118623207
Category : Technology & Engineering
Languages : en
Pages : 381

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This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.

Author: Michele Riccio
Publisher: Trans Tech Publications Ltd
ISBN: 3036412034
Category : Science
Languages : en
Pages : 1096

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Selected peer-reviewed extended articles based on abstracts presented at the 20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023) Aggregated Book

Author: Govindhan Dhanaraj
Publisher: Springer Science & Business Media
ISBN: 3540747613
Category : Science
Languages : en
Pages : 1823

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Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.

Author:
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 908

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Author: Krzysztof (Kris) Iniewski
Publisher: Springer Nature
ISBN: 3030764613
Category : Technology & Engineering
Languages : en
Pages : 357

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This book offers readers an overview of some of the most recent advances in the field of advanced materials used for gamma and X-ray imaging. Coverage includes both technology and applications, with an in-depth review of the research topics from leading specialists in the field. Emphasis is on high-Z materials like CdTe, CZT and GaAs, as well as perovskite crystals, since they offer the best implementation possibilities for direct conversion X-ray detectors. Authors discuss material challenges, detector operation physics and technology and readout integrated circuits required to detect signals processes by high-Z sensors.

Author: Stephen Edward Saddow
Publisher: MDPI
ISBN: 3039360108
Category : Technology & Engineering
Languages : en
Pages : 170

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MEMS devices are found in many of today’s electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense.

Author: K. Byrappa
Publisher: Springer Science & Business Media
ISBN: 9783540003670
Category : Science
Languages : en
Pages : 618

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Crystals are the unacknowledged pillars of modern technology. The modern technological developments depend greatly on the availability of suitable single crystals, whether it is for lasers, semiconductors, magnetic devices, optical devices, superconductors, telecommunication, etc. In spite of great technological advancements in the recent years, we are still in the early stage with respect to the growth of several important crystals such as diamond, silicon carbide, PZT, gallium nitride, and so on. Unless the science of growing these crystals is understood precisely, it is impossible to grow them as large single crystals to be applied in modern industry. This book deals with almost all the modern crystal growth techniques that have been adopted, including appropriate case studies. Since there has been no other book published to cover the subject after the Handbook of Crystal Growth, Eds. DTJ Hurle, published during 1993-1995, this book will fill the existing gap for its readers. The book begins with "Growth Histories of Mineral Crystals" by the most senior expert in this field, Professor Ichiro Sunagawa. The next chapter reviews recent developments in the theory of crystal growth, which is equally important before moving on to actual techniques. After the first two fundamental chapters, the book covers other topics like the recent progress in quartz growth, diamond growth, silicon carbide single crystals, PZT crystals, nonlinear optical crystals, solid state laser crystals, gemstones, high melting oxides like lithium niobates, hydroxyapatite, GaAs by molecular beam epitaxy, superconducting crystals, morphology control, and more. For the first time, the crystal growth modeling has been discussed in detail with reference to PZT and SiC crystals.

Author: Roland Madar
Publisher: Trans Tech Publications Ltd
ISBN: 3035706298
Category : Technology & Engineering
Languages : en
Pages : 1666

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Book Description
ICSCRM 2003 Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003