Author: Md. Tashfin Zayed HossainPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Electrical Characteristics of Gallium Nitride and Silicon Based Metal-oxide-semiconductor (MOS) Capacitors
Author: Md. Tashfin Zayed HossainPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Gallium Nitride And Silicon Carbide Power Devices
Author: B Jayant BaligaPublisher: World Scientific Publishing Company
ISBN: 9813109424
Category : Technology & Engineering
Languages : en
Pages : 592
Book Description
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Bulk Gallium Nitride Based Electronic Devices
Author: Silicon Nitride for Microelectronic Applications
Author: J. T. MilekPublisher: Springer Science & Business Media
ISBN: 1461596092
Category : Technology & Engineering
Languages : en
Pages : 124
Book Description
This survey is concerned with the use of silicon nitride in the semi conductor and microelectronics industries. The Handbook of Electronic Materials, volume 3, comprises part 1 of this survey and includes preparation and properties information. This report was prepared by Hughes Aircraft Company, Culver City, California under Contract Number F336lS-70-C-1348. The work was admini stered under the direction of the Air Force Materials Laboratory, Air Force Systems Command, Wright-Patterson Air Force Base, Ohio, with Hr. B. Emrich, Project Engineer. The Electronic Properties Information Center (EPIC) is a designated Information Analysis Center of the Department of Defense, authorized to pro vide information to the entire DoD community. The purpose of the Center is to provide a highly competent source of information and data on the electronic, optical and magnetic properties of materials of value to the Department of Defense. Its major function is to evaluate, compile and publish the experi mental data from the world's unclassified literature concerned with the properties of materials. All materials relevant to the field of electronics are within the scope of EPIC: insulators, semiconductors, metals, super conductors, ferrites, ferroelectrics, ferromagnetics, electroluminescents, thermionic emitters and optical materials. The Center's scope includes information on over 100 basic properties of materials; information generally regarded as being in the area of devices and/or circuitry is excluded. v CONTENTS Foreword. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Diffusion Mask Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . '" 11 Glass-to-Metal Seals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Passivation Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Memory Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Capacitors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 Radiation Hardening Applications . . . . . . . . . . . . . . . •. . . . . . . . .
Power GaN Devices
Author: Matteo MeneghiniPublisher: Springer
ISBN: 3319431994
Category : Technology & Engineering
Languages : en
Pages : 383
Book Description
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Gallium Nitride and Silicon Carbide Power Technologies 7
Author: M. DudleyPublisher: The Electrochemical Society
ISBN: 1607688247
Category :
Languages : en
Pages : 297
Book Description
Wide Bandgap Semiconductor Power Devices
Author: B. Jayant BaligaPublisher: Woodhead Publishing
ISBN: 0081023073
Category : Technology & Engineering
Languages : en
Pages : 420
Book Description
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Scientific and Technical Aerospace Reports
Author: Effect of Nitrogen and Rapid Photothermal Processing on the Electrical Characteristics of Tantalum Pentoxide and Niobium Pentoxide Metal Oxide Silicon (MOS) Capacitors
Author: Jimmy PritchardGaN Transistors for Efficient Power Conversion
Author: Alex LidowPublisher: John Wiley & Sons
ISBN: 1119594421
Category : Science
Languages : en
Pages : 470
Book Description
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.