Author: Bruce Bennett Doris
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 248
Book Description
Effects of hydrogen termination on the low temperature growth mode Si on Si(100) by remote plasma enhanced chemical vapor deposition
Author: Bruce Bennett Doris
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 248
Book Description
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 248
Book Description
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 652
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 652
Book Description
Metals Abstracts
Electrical & Electronics Abstracts
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1904
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1904
Book Description
Ceramic Abstracts
Si Atomic Layer Epitaxy Using Remote Plasma Assisted Hydrogen Desorption and Disilane as a Precursor
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 3
Book Description
We have demonstrated silicon Atomic Layer Epitaxy(ALE) using ions from an rf-excited helium plasma glow discharge which held remote from the substrate in a Remote Plasma Enhanced Chemical Vapor Deposition (RPCVD) system to minimize surface damage. The starting surface was a combination of dihydride and monohydride termination. The ALE experiment cycle consisted of bombarding the substrate with He ions from the plasma for 1-3 min. to desorb it followed by dosing the surface with disilane in a range of partial pressures (10 (exp -7) Torr to 1.67 mTorr), temperatures (250 C-400 C) and times (20 sec to 3 min.) without plasma excitation to adsorb Si2H6 on the bare surface Si atoms created by the bombardment as to silyl(SiH3) species in a self-limiting manner which results in a hydrogen terminated surface. The maximum growth obtained was 0.44 monolayers per cycle for a 3 minute bombardment cycle. The growth per cycle decreases as the bombardment cycle time is decreased, indicating that the percentage of hydrogen removed decreases with the bombardment time.
Publisher:
ISBN:
Category :
Languages : en
Pages : 3
Book Description
We have demonstrated silicon Atomic Layer Epitaxy(ALE) using ions from an rf-excited helium plasma glow discharge which held remote from the substrate in a Remote Plasma Enhanced Chemical Vapor Deposition (RPCVD) system to minimize surface damage. The starting surface was a combination of dihydride and monohydride termination. The ALE experiment cycle consisted of bombarding the substrate with He ions from the plasma for 1-3 min. to desorb it followed by dosing the surface with disilane in a range of partial pressures (10 (exp -7) Torr to 1.67 mTorr), temperatures (250 C-400 C) and times (20 sec to 3 min.) without plasma excitation to adsorb Si2H6 on the bare surface Si atoms created by the bombardment as to silyl(SiH3) species in a self-limiting manner which results in a hydrogen terminated surface. The maximum growth obtained was 0.44 monolayers per cycle for a 3 minute bombardment cycle. The growth per cycle decreases as the bombardment cycle time is decreased, indicating that the percentage of hydrogen removed decreases with the bombardment time.
Metals Abstracts Index
American Doctoral Dissertations
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 806
Book Description
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 806
Book Description