Effects of hydrogen termination on the low temperature growth mode Si on Si(100) by remote plasma enhanced chemical vapor deposition PDF Download

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Effects of hydrogen termination on the low temperature growth mode Si on Si(100) by remote plasma enhanced chemical vapor deposition

Effects of hydrogen termination on the low temperature growth mode Si on Si(100) by remote plasma enhanced chemical vapor deposition PDF Author: Bruce Bennett Doris
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 248

Book Description


Effects of hydrogen termination on the low temperature growth mode Si on Si(100) by remote plasma enhanced chemical vapor deposition

Effects of hydrogen termination on the low temperature growth mode Si on Si(100) by remote plasma enhanced chemical vapor deposition PDF Author: Bruce Bennett Doris
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 248

Book Description


Dissertation Abstracts International

Dissertation Abstracts International PDF Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 652

Book Description


Metals Abstracts

Metals Abstracts PDF Author:
Publisher:
ISBN:
Category : Metallurgy
Languages : en
Pages : 1628

Book Description


Electrical & Electronics Abstracts

Electrical & Electronics Abstracts PDF Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1904

Book Description


Ceramic Abstracts

Ceramic Abstracts PDF Author:
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 972

Book Description


Si Atomic Layer Epitaxy Using Remote Plasma Assisted Hydrogen Desorption and Disilane as a Precursor

Si Atomic Layer Epitaxy Using Remote Plasma Assisted Hydrogen Desorption and Disilane as a Precursor PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 3

Book Description
We have demonstrated silicon Atomic Layer Epitaxy(ALE) using ions from an rf-excited helium plasma glow discharge which held remote from the substrate in a Remote Plasma Enhanced Chemical Vapor Deposition (RPCVD) system to minimize surface damage. The starting surface was a combination of dihydride and monohydride termination. The ALE experiment cycle consisted of bombarding the substrate with He ions from the plasma for 1-3 min. to desorb it followed by dosing the surface with disilane in a range of partial pressures (10 (exp -7) Torr to 1.67 mTorr), temperatures (250 C-400 C) and times (20 sec to 3 min.) without plasma excitation to adsorb Si2H6 on the bare surface Si atoms created by the bombardment as to silyl(SiH3) species in a self-limiting manner which results in a hydrogen terminated surface. The maximum growth obtained was 0.44 monolayers per cycle for a 3 minute bombardment cycle. The growth per cycle decreases as the bombardment cycle time is decreased, indicating that the percentage of hydrogen removed decreases with the bombardment time.

Metals Abstracts Index

Metals Abstracts Index PDF Author:
Publisher:
ISBN:
Category : Metallurgy
Languages : en
Pages : 1622

Book Description


American Doctoral Dissertations

American Doctoral Dissertations PDF Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 806

Book Description


Physics Briefs

Physics Briefs PDF Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 820

Book Description


Japanese Journal of Applied Physics

Japanese Journal of Applied Physics PDF Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1198

Book Description