Author: Jeremy Alfred Theil
Publisher:
ISBN:
Category :
Languages : en
Pages : 478
Book Description
Effects of Deposition Parameters on Thin Film Properties of Si-based Electronic Materials Deposited by Remote Plasma-enhanced Chemical Vapor Deposition
Plasma Deposition of Amorphous Silicon-Based Materials
Author: Pio Capezzuto
Publisher: Elsevier
ISBN: 0080539106
Category : Science
Languages : en
Pages : 339
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Publisher: Elsevier
ISBN: 0080539106
Category : Science
Languages : en
Pages : 339
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Plasma Deposition of Amorphous Silicon-based Materials
Author: Giovanni Bruno
Publisher:
ISBN: 9780121379407
Category : Science
Languages : en
Pages : 324
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Publisher:
ISBN: 9780121379407
Category : Science
Languages : en
Pages : 324
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 842
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 842
Book Description
Handbook of Thin Film Deposition Techniques Principles, Methods, Equipment and Applications, Second Editon
Author: Krishna Seshan
Publisher: CRC Press
ISBN: 1482269686
Category : Science
Languages : en
Pages : 72
Book Description
The Handbook of Thin Film Deposition Techniques: Principles, Methods, Equipment and Applications, Second Edition explores the technology behind the spectacular growth in the silicon semiconductor industry and the continued trend in miniaturization over the last 20 years. This growth has been fueled in large part by improved thin film deposition tec
Publisher: CRC Press
ISBN: 1482269686
Category : Science
Languages : en
Pages : 72
Book Description
The Handbook of Thin Film Deposition Techniques: Principles, Methods, Equipment and Applications, Second Edition explores the technology behind the spectacular growth in the silicon semiconductor industry and the continued trend in miniaturization over the last 20 years. This growth has been fueled in large part by improved thin film deposition tec
Characteristics of Silicon Nitride Deposited by VHF (162 MHz)-plasma Enhanced Chemical Vapor Deposition Using a Multi-tile Push–pull Plasma Source
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Abstract: To prevent moisture and oxygen permeation into flexible organic electronic devices formed on substrates, the deposition of an inorganic diffusion barrier material such as SiN x is important for thin film encapsulation. In this study, by a very high frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push–pull plasma source, SiN x layers were deposited with a gas mixture of NH3 /SiH4 with/without N2 and the characteristics of the plasma and the deposited SiN x film as the thin film barrier were investigated. Compared to a lower frequency (60 MHz) plasma, the VHF (162 MHz) multi-tile push–pull plasma showed a lower electron temperature, a higher vibrational temperature, and higher N2 dissociation for an N2 plasma. When a SiN x layer was deposited with a mixture of NH3 /SiH4 with N2 at a low temperature of 100 °C, a stoichiometric amorphous Si3 N4 layer with very low Si–H bonding could be deposited. The 300 nm thick SiN x film exhibited a low water vapor transmission rate of 1.18 × 10 −4 g (m 2 · d) −1, in addition to an optical transmittance of higher than 90%.
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Abstract: To prevent moisture and oxygen permeation into flexible organic electronic devices formed on substrates, the deposition of an inorganic diffusion barrier material such as SiN x is important for thin film encapsulation. In this study, by a very high frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push–pull plasma source, SiN x layers were deposited with a gas mixture of NH3 /SiH4 with/without N2 and the characteristics of the plasma and the deposited SiN x film as the thin film barrier were investigated. Compared to a lower frequency (60 MHz) plasma, the VHF (162 MHz) multi-tile push–pull plasma showed a lower electron temperature, a higher vibrational temperature, and higher N2 dissociation for an N2 plasma. When a SiN x layer was deposited with a mixture of NH3 /SiH4 with N2 at a low temperature of 100 °C, a stoichiometric amorphous Si3 N4 layer with very low Si–H bonding could be deposited. The 300 nm thick SiN x film exhibited a low water vapor transmission rate of 1.18 × 10 −4 g (m 2 · d) −1, in addition to an optical transmittance of higher than 90%.
Handbook of Thin-film Deposition Processes and Techniques
Author: Klaus K. Schuegraf
Publisher: William Andrew
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 440
Book Description
The most recent developments and techniques in thin film deposition for high technology applications are described by 23 authorities in the field.
Publisher: William Andrew
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 440
Book Description
The most recent developments and techniques in thin film deposition for high technology applications are described by 23 authorities in the field.
Plasma Enhanced Chemical Vapor Deposition of Silicon Based Thin Film Materials
Author: Ashfaqul Islam Chowdhury
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 374
Book Description
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 374
Book Description
Handbook of Thin Film Deposition
Author: Krishna Seshan
Publisher: William Andrew
ISBN: 1437778747
Category : Technology & Engineering
Languages : en
Pages : 411
Book Description
The Handbook of Thin Film Deposition is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, new materials for memory applications and methods for thin film optical processes. In a major restructuring, this edition of the handbook lays the foundations with an up-to-date treatment of lithography, contamination and yield management, and reliability of thin films. The established physical and chemical deposition processes and technologies are then covered, the last section of the book being devoted to more recent technological developments such as microelectromechanical systems, photovoltaic applications, digital cameras, CCD arrays, and optical thin films. A practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance and applications Covers core processes and applications in the semiconductor industry and new developments in the photovoltaic and optical thin film industries The new edition takes covers the transition taking place in the semiconductor world from Al/SiO2 to copper interconnects with low-k dielectrics Written by acknowledged industry experts from key companies in the semiconductor industry including Intel and IBM Foreword by Gordon E. Moore, co-founder of Intel and formulator of the renowned ‘Moore’s Law’ relating to the technology development cycle in the semiconductor industry
Publisher: William Andrew
ISBN: 1437778747
Category : Technology & Engineering
Languages : en
Pages : 411
Book Description
The Handbook of Thin Film Deposition is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, new materials for memory applications and methods for thin film optical processes. In a major restructuring, this edition of the handbook lays the foundations with an up-to-date treatment of lithography, contamination and yield management, and reliability of thin films. The established physical and chemical deposition processes and technologies are then covered, the last section of the book being devoted to more recent technological developments such as microelectromechanical systems, photovoltaic applications, digital cameras, CCD arrays, and optical thin films. A practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance and applications Covers core processes and applications in the semiconductor industry and new developments in the photovoltaic and optical thin film industries The new edition takes covers the transition taking place in the semiconductor world from Al/SiO2 to copper interconnects with low-k dielectrics Written by acknowledged industry experts from key companies in the semiconductor industry including Intel and IBM Foreword by Gordon E. Moore, co-founder of Intel and formulator of the renowned ‘Moore’s Law’ relating to the technology development cycle in the semiconductor industry
Chemical Vapor Deposition
Author: S Neralla
Publisher: BoD – Books on Demand
ISBN: 9535125729
Category : Science
Languages : en
Pages : 292
Book Description
This book provides an overview of chemical vapor deposition (CVD) methods and recent advances in developing novel materials for application in various fields. CVD has now evolved into the most widely used technique for growth of thin films in electronics industry. Several books on CVD methods have emerged in the past, and thus the scope of this book goes beyond providing fundamentals of the CVD process. Some of the chapters included highlight current limitations in the CVD methods and offer alternatives in developing coatings through overcoming these limitations.
Publisher: BoD – Books on Demand
ISBN: 9535125729
Category : Science
Languages : en
Pages : 292
Book Description
This book provides an overview of chemical vapor deposition (CVD) methods and recent advances in developing novel materials for application in various fields. CVD has now evolved into the most widely used technique for growth of thin films in electronics industry. Several books on CVD methods have emerged in the past, and thus the scope of this book goes beyond providing fundamentals of the CVD process. Some of the chapters included highlight current limitations in the CVD methods and offer alternatives in developing coatings through overcoming these limitations.