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Effect of Microstructure of Aluminum Alloys on the Electromigration-limited Reliability of VLSI Interconnects

Effect of Microstructure of Aluminum Alloys on the Electromigration-limited Reliability of VLSI Interconnects PDF Author: Jaeshin Cho
Publisher:
ISBN:
Category :
Languages : en
Pages : 444

Book Description


Effect of Microstructure of Aluminum Alloys on the Electromigration-limited Reliability of VLSI Interconnects

Effect of Microstructure of Aluminum Alloys on the Electromigration-limited Reliability of VLSI Interconnects PDF Author: Jaeshin Cho
Publisher:
ISBN:
Category :
Languages : en
Pages : 444

Book Description


Effect of Microstructure of Aluminum Alloys on the Electromigration-limited Reliability of VLSI Interconnects

Effect of Microstructure of Aluminum Alloys on the Electromigration-limited Reliability of VLSI Interconnects PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
By Jaeshin Cho.

The Microstructural Mechanism of Electromigration Failure in Narrow Interconnects of A1 Alloys

The Microstructural Mechanism of Electromigration Failure in Narrow Interconnects of A1 Alloys PDF Author: Choongun Kim
Publisher:
ISBN:
Category :
Languages : en
Pages : 464

Book Description


Stress-induced Phenomena in Metallization

Stress-induced Phenomena in Metallization PDF Author: Paul Totta
Publisher: American Institute of Physics
ISBN:
Category : Science
Languages : en
Pages : 328

Book Description
The aim of this text of stress-induced phenomena in metallization is to assess the current understanding of the problems, to discuss the implications for the reliability of future devices, and to identify needs and directions for future research.

Materials Reliability in Microelectronics V: Volume 391

Materials Reliability in Microelectronics V: Volume 391 PDF Author: Anthony S. Oates
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 552

Book Description
This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.

Metals Abstracts

Metals Abstracts PDF Author:
Publisher:
ISBN:
Category : Metallurgy
Languages : en
Pages : 1584

Book Description


American Doctoral Dissertations

American Doctoral Dissertations PDF Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 768

Book Description


RLE Progress Report

RLE Progress Report PDF Author: Massachusetts Institute of Technology. Research Laboratory of Electronics
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 448

Book Description


Alloys Index

Alloys Index PDF Author:
Publisher:
ISBN:
Category : Alloys
Languages : en
Pages : 950

Book Description


Fundamentals of Electromigration-Aware Integrated Circuit Design

Fundamentals of Electromigration-Aware Integrated Circuit Design PDF Author: Jens Lienig
Publisher: Springer
ISBN: 3319735586
Category : Technology & Engineering
Languages : en
Pages : 171

Book Description
The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.