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The RF and Microwave Handbook

The RF and Microwave Handbook PDF Author: Mike Golio
Publisher: CRC Press
ISBN: 1420036769
Category : Technology & Engineering
Languages : en
Pages : 1377

Book Description
The recent shift in focus from defense and government work to commercial wireless efforts has caused the job of the typical microwave engineer to change dramatically. The modern microwave and RF engineer is expected to know customer expectations, market trends, manufacturing technologies, and factory models to a degree that is unprecedented in the

The RF and Microwave Handbook

The RF and Microwave Handbook PDF Author: Mike Golio
Publisher: CRC Press
ISBN: 1420036769
Category : Technology & Engineering
Languages : en
Pages : 1377

Book Description
The recent shift in focus from defense and government work to commercial wireless efforts has caused the job of the typical microwave engineer to change dramatically. The modern microwave and RF engineer is expected to know customer expectations, market trends, manufacturing technologies, and factory models to a degree that is unprecedented in the

Applications Technology Satellite -6 [ATS 6].

Applications Technology Satellite -6 [ATS 6]. PDF Author:
Publisher:
ISBN:
Category : Artificial satellites in education
Languages : en
Pages : 12

Book Description


Time Domain Electromagnetics

Time Domain Electromagnetics PDF Author: Cynthia M. Furse
Publisher: IOP ebooks
ISBN: 9780750323987
Category :
Languages : en
Pages : 0

Book Description
This book, aimed at researchers, practitioners and advanced students will bring the concepts of time and frequency domain reflectometry together, helping the reader develop a detailed understanding not only of each method, but of the relationships between them, and how they can each be used to their best advantage.

Microwave and RF Design, Volume 5

Microwave and RF Design, Volume 5 PDF Author: Michael Steer
Publisher: NC State University
ISBN: 9781469656984
Category :
Languages : en
Pages : 236

Book Description
Microwave and RF Design: Amplifiers and Oscillators presents the design of amplifiers and oscillators in a way that enables state-of-the-art designs to be realized. Detailed strategies and case studies are presented. Design of competitive microwave amplifiers and oscillators is particularly challenging as many trade-offs are required in design, and the design decisions cannot be reduced to a formulaic flow. The emphasis is on developing design skills. This book is suitable as both an undergraduate and graduate textbook, as well as a career-long reference book. Key Features * The fifth volume of a comprehensive series on microwave and RF design * Open access ebook editions are hosted by NC State University Libraries at https://repository.lib.ncsu.edu/handle/1840.20/36776 * 9 worked examples * An average of 23 exercises per chapter * Answers to selected exercises * 6 extensive case studies following the design of competitive amplifiers and oscillators with world leading performance * Volume 5 of a five volume series on microwave and RF design, all available as open access ebooks * A companion book, Fundamentals of Microwave and RF Design, is suitable as a comprehensive undergraduate textbook on microwave engineering

The Secret Shofar of Barcelona

The Secret Shofar of Barcelona PDF Author: Jacqueline Dembar Greene
Publisher: Kar-Ben Publishing ™
ISBN: 1512496308
Category : Juvenile Fiction
Languages : en
Pages : 60

Book Description
Symphony conductor Don Fernando longs to hear the sounds of the shofar. Like other conversos during the Spanish Inquisition, he has to hide his Jewish religion and pretend to follow the teachings of the church. But when he is asked to perform a concert celebrating the new world, he and his son Rafael devise a clever plan to usher in the Jewish New Year in plain sight of the Spanish nobility.

Masters Theses in the Pure and Applied Sciences

Masters Theses in the Pure and Applied Sciences PDF Author: W. H. Shafer
Publisher: Springer
ISBN: 9780306409912
Category : Science
Languages : en
Pages : 297

Book Description
Masters Theses in the Pure and Applied Sciences was first conceived, published, and dis seminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the ac tivity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volume were handled by an international publishing. house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 25 (thesis year 1980) a total of 10,308 theses titles from 27 Canadian and 214 United States universities. We are sure that this broader base for theses titles reported will greatly enhance the value of this important annual reference work. While Volume 25 reports theses submitted in 1980, on occasion, certain universities do report theses submitted in previous years but not reported at the time.

Astrophysics

Astrophysics PDF Author: Nathaniel Carleton
Publisher:
ISBN:
Category : Astronomical photometry
Languages : en
Pages : 587

Book Description


An Indium-phosphide Double-heterojunction Bipolar Transistor Technology for 80 Gb/s Integrated Circuits

An Indium-phosphide Double-heterojunction Bipolar Transistor Technology for 80 Gb/s Integrated Circuits PDF Author: Iwan Schnyder
Publisher:
ISBN: 9783866280007
Category : Bipolar transistors
Languages : en
Pages : 267

Book Description


Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz

Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz PDF Author: Ksenia Nosaeva
Publisher: Cuvillier Verlag
ISBN: 3736982879
Category : Technology & Engineering
Languages : en
Pages : 155

Book Description
This work describes the improvement in thermal management of InP double heterojunction bipolar transistors (DHBTs) fabricated with a transferred-substrate process. The availability of nanocrystalline CVD diamond-on-silicon (Si) handle substrates makes it possible to introduce a 10 µm diamond layer into the InP HBT MMIC stack with BCB-embedded transistors, passive elements and metal interconnects using an adhesive wafer-to-wafer bond process with subsequent removal of the Si host-substrate. Vertical thermal via connections through the diamond and BCB were created by applying inductively coupled plasma etching with oxygen plasma and electroplating. Electrical characterization of transistors after diamond transfer showed no degradation in RF characteristics and an improvement in DC behavior. A reduction in thermal resistance by 74% from 4.2 K/mW to 1.1 K/mW was observed, which to the author’s knowledge is the lowest thermal resistance for 1-finger InP HBTs with 0.8×5 µm2 emitter area. Significant reduction of thermal resistance of multi-finger devices was achieved: from 4.1 K/mW down to 0.7 K/mW for 2-finger HBTs and from 1.53 K/mW down to the recordly small 0.54 K/mW for 3-finger devices. Based on the developed diamond heat spreader technology, the designed medium-power amplifier delivers a maximum output power of 20 dBm representing the improvement of 4 dBm. Moreover, stable operation of a high-power amplifier with maximum output power of 23 dBm was reached.

Charge-Based MOS Transistor Modeling

Charge-Based MOS Transistor Modeling PDF Author: Christian C. Enz
Publisher: John Wiley & Sons
ISBN: 0470855452
Category : Technology & Engineering
Languages : en
Pages : 328

Book Description
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.