Dose Rate Effects on Damage Formation in Ion-implanted Gallium Arsenide PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages : 14
Book Description
The residual damage in GaAs was measured by ion channeling following implantation of either 100 keV 3°Si at temperatures of 300K or 77K, or 360 keV 12°Sn at 300K. For room-temperature Si implants and fluences between 1 and 10 × 1014 Si/cm2, the amount of damage created was strongly dependent upon the ion current density, which was varied between 0.05 and 12 [mu]A/cm2. Two different stages of damage growth were identified by an abrupt increase in the damage growth rate as a function of fluence, and the threshold fluence for the onset of the second stage was found to be dependent on the dose rate. The dose rate effect on damage was substantially weaker for 12°Sn+ implants and was negligible for Si implants at 77K. The damage was found to be most sensitive to the average current density, demonstrating that the defects which are the precursors to the residual dose-rate dependent damage have active lifetimes of at least 3 × 10−4 s. The dose rate effect and its variation with ion mass and temperature are discussed in the context of homogeneous nucleation and growth of damage during ion irradiation.
Author: Publisher: ISBN: Category : Languages : en Pages : 14
Book Description
The residual damage in GaAs was measured by ion channeling following implantation of either 100 keV 3°Si at temperatures of 300K or 77K, or 360 keV 12°Sn at 300K. For room-temperature Si implants and fluences between 1 and 10 × 1014 Si/cm2, the amount of damage created was strongly dependent upon the ion current density, which was varied between 0.05 and 12 [mu]A/cm2. Two different stages of damage growth were identified by an abrupt increase in the damage growth rate as a function of fluence, and the threshold fluence for the onset of the second stage was found to be dependent on the dose rate. The dose rate effect on damage was substantially weaker for 12°Sn+ implants and was negligible for Si implants at 77K. The damage was found to be most sensitive to the average current density, demonstrating that the defects which are the precursors to the residual dose-rate dependent damage have active lifetimes of at least 3 × 10−4 s. The dose rate effect and its variation with ion mass and temperature are discussed in the context of homogeneous nucleation and growth of damage during ion irradiation.
Author: Publisher: Academic Press ISBN: 0080864430 Category : Technology & Engineering Languages : en Pages : 335
Book Description
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Author: S. Coffa Publisher: Newnes ISBN: 044459972X Category : Science Languages : en Pages : 1031
Book Description
The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Author: Publisher: ISBN: Category : Languages : en Pages : 27
Book Description
In references 1 and 2 the principal investigator and his collaborators have documented that a surprisingly large improvement in the electrical properties of silicon and sulfur implanted GaAs are realized if the implantations are carried out at low dose-rates. This work is the subject of a Navy Patent application (case 72,812). It seems likely that these phenomena are related to a dose-rate dependent damage accumulation mechanism in GaAs that has recently been reported on by a group at Oak Ridge National Laboratories. While the dose-rate effects can now be expected there is no understanding as to exactly why they occur nor can they be accurately predicted. This study seeks to shed light on these issues by performing spectroscopic measurements on silicon implanted GaAs samples and correlating these results with the implantation parameters and electrical properties of the samples.
Author: J. S. Williams Publisher: Academic Press ISBN: 1483220648 Category : Technology & Engineering Languages : en Pages : 432
Book Description
Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
Transmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEM - Ion Accelerator Facility at Argonne National Laboratory. The ion bombardments (50 keV Ar and Kr) and the microscopy have been carried out at temperatures ranging from 30 to 300°K. Ion fluences ranged from 2 x 1011 to 5 x 1013 ions cm−2. Direct-impact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30°K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 250°K. Post-implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears. 14 refs., 3 figs., 1 tab.
Author: Samuel C. Ling Publisher: ISBN: Category : Languages : en Pages : 15
Book Description
Radiation damage and low temperature (200 degrees-600 degrees C) annealing behavior of 120 keV silicon and selenium ion implants into gallium arsenide have been investigated by Rutherford Backscattering-Channeling and Transmission Electron Microscopy techniques. Lattice location studies of Si implants after high temperature annealing (850 degrees and 950 degrees C) have been conducted using Proton Induced X-Ray Emission method. (Author).
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Author: Mario N. Armenise