Author: Lynn C. CalhounPublisher:
ISBN:
Category :
Languages : en
Pages : 252
Book Description
Doping of Zinc Selenide During Molecular Beam Epitaxial Growth Using Atomic Phosphorus Derived from a Novel Dual Solid-source/gas Source Radio-frequency Cracker Unit
Author: Lynn C. CalhounGrowth and Doping of Zinc Selenide Using Alternative Gaseous Source Epitaxial Techniques
Author: Easen HoN- and P- Type Doping of ZnSe Using Gas Source Molecular Beam Epitaxy
Author: P. A. FisherAtomic Layer Deposition for Semiconductors
Author: Cheol Seong HwangPublisher: Springer Science & Business Media
ISBN: 146148054X
Category : Science
Languages : en
Pages : 266
Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Molecular Beam Epitaxial Growth of Homoepitaxial Zinc Selenide
Author: Minhyon JeonIn Situ, Real-time Determination of Optimum Growth Conditions Using Cathodoluminescence for the Molecular Beam Epitaxial Growth of Nitrogen-doped P-type Zinc Selenide
Author: Lynn C. CalhounUltra-high B Doping During Si1̳-̳x̳Gex̳(001) Gas-source Molecular-beam Epitaxy
Author: Glenn Aaron GlassGrowth of Highly Doped P-type ZnTe Films by Pulsed Laser Ablation in Molecular Nitrogen
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 6
Book Description
Highly p-doped ZnTe films have been grown on semi-insulating GaAs (001) substrates by pulsed-laser ablation (PLA) of a stoichiometric ZnTe target in a high-purity N2 ambient without the use of any assisting (DC or AC) plasma source. Free hole concentrations in the mid-1019 cm−3 to> 102° cm−3 range were obtained for a range of nitrogen pressures The maximum hole concentration equals the highest hole doping reported to date for any wide band gap II-VI compound. The highest hole mobilities were attained for nitrogen pressures of 50--100 mTorr ((approximately)6.5-13 Pa). Unlike recent experiments in which atomic nitrogen beams, extracted from RF and DC plasma sources, were used to produce p-type doping during molecular beam epitaxy deposition, spectroscopic measurements carried out during PLA of ZnTe in N2 do not reveal the presence of atomic nitrogen. This suggests that the high hole concentrations in laser ablated ZnTe are produced by a new and different mechanism, possibly energetic beam-induced reactions with excited molecular nitrogen adsorbed on the growing film surface, or transient formation of Zn-N complexes in the energetic ablation plume. This appears to be the first time that any wide band gap (Eg> 2 eV) II-VI compound (or other) semiconductor has been impurity-doped from the gas phase by laser ablation. In combination with the recent discovery that epitaxial ZnSe{sub l-x}S(subscript x) films and heterostructures with continuously variable composition can be grown by ablation from a single target of fixed composition, these results appear to open the way to explore PLA growth and doping of compound semiconductors as a possible alternative to molecular beam epitaxy.
Focussed Ion Beam Doping During Molecular Beam Epitaxial Growth
Author: James Hedley ThompsonHyperabrupt Doping Profiles in Silicon by Molecular Beam Epitaxy Using Solid Phase Epitaxial Regrowth
Author: Dwight Christopher StreitPublisher:
ISBN:
Category :
Languages : en
Pages : 442
Book Description