Donor Neutralization in GaAs After Plasma Silicon Nitride Deposition PDF Download
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Author: Karen L. Seaward Publisher: ISBN: Category : Metal oxide semiconductors, Complementary Languages : en Pages : 15
Book Description
Abstract: "Loss of conductance has been observed in Si-doped GaAs after plasma silicon nitride deposition in a 2.45 GHz ECR reactor and in a 30 kHz parallel-plate reactor, but not in a 13.56 MHz parallel-plate reactor. Based on the temperature at which conductance is restored in test structures subjected to a variety of plasmas, observation of atomic hydrogen in the plasmas by optical emission, and SIMS measurement of hydrogen in the test structures, the loss of conductance appears to be from formation of the hydrogen-silicon complex. The extent of neutralization correlates with an abundance of atomic hydrogen in the plasmas and the nitride deposition rate. When the deposition rate is high, the GaAs surface is protected quickly and donor neutralization is minimized."
Author: Karen L. Seaward Publisher: ISBN: Category : Metal oxide semiconductors, Complementary Languages : en Pages : 15
Book Description
Abstract: "Loss of conductance has been observed in Si-doped GaAs after plasma silicon nitride deposition in a 2.45 GHz ECR reactor and in a 30 kHz parallel-plate reactor, but not in a 13.56 MHz parallel-plate reactor. Based on the temperature at which conductance is restored in test structures subjected to a variety of plasmas, observation of atomic hydrogen in the plasmas by optical emission, and SIMS measurement of hydrogen in the test structures, the loss of conductance appears to be from formation of the hydrogen-silicon complex. The extent of neutralization correlates with an abundance of atomic hydrogen in the plasmas and the nitride deposition rate. When the deposition rate is high, the GaAs surface is protected quickly and donor neutralization is minimized."
Author: Y.I. Nissim Publisher: Elsevier ISBN: 0444596933 Category : Technology & Engineering Languages : en Pages : 173
Book Description
Single chamber processing has attracted the attention of a number of researchers as well as industries as an alternative processing "philosophy" to complement or even replace the stringent environment of micro- and optoelectronics device fabrication. Up till now single chamber processing has been an elusive manufacturing objective throughout the history of integrated circuit technology. With the emergence of integrated processing tools in recent years, significant segments for continuous fabrication processes have been successfully realised and their potential has already innovated the industry. The 14 papers in this volume cover topics such as: The background of this approach and up-dated status; Design and concepts of relevant cluster tools equipment; Specific process modules such as deposition chambers (CVD, RTCVD, UVCVD, ...) annealing or etching reactors; and Standardization efforts. The work will provide both a stimulus for future research in this field, as well as useful reference material on the new technology trends in microelectronic device manufacturing technology.
Author: S. J. Pearton Publisher: ISBN: Category : Technology & Engineering Languages : en Pages : 560
Book Description
State-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces.
Author: Yves I. Nissim Publisher: North Holland ISBN: Category : Science Languages : en Pages : 328
Book Description
These proceedings focus on the technology application driving forces for multichamber approaches to semiconductor process sequences, otherwise called cluster tools or integrated processing and present research results upon which these manufacturing technologies are built.
Author: Karen L. Seaward
Author: Karen L. Seaward
Author: Marlann Marinho Patterson
Author: Y.I. Nissim
Author: 
Author: S. J. Pearton
Author: British Library. Document Supply Centre
Author: 
Author: Yves I. Nissim
Author: 
Author: Materials Research Society. Meeting