Author: Glyn MacPhersonPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Distribution and Control of Misfit Dislocations in Indium Gallium Arsenide Layers Grown on Gallium Arsenide Substrates
Author: Glyn MacPhersonControl of Semiconductor Interfaces
Author: I. OhdomariPublisher: Elsevier
ISBN: 1483290484
Category : Science
Languages : en
Pages : 600
Book Description
This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization. A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.
Defect Control in Semiconductors
Author: K. SuminoPublisher: Elsevier
ISBN: 0444600647
Category : Technology & Engineering
Languages : en
Pages : 817
Book Description
Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
JJAP
Author: Electrical & Electronics Abstracts
Author: Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304
Book Description
Characterization of Dislocations in Indium Gallium Arsenide Substrates Using Potassium Hydroxide Etching
Author: Michele D. HardyPublisher:
ISBN:
Category : Compound semiconductors
Languages : en
Pages : 118
Book Description
Chemical Abstracts
Author: Thin films of gallium arsenide on low-cost substrates
Author: Rockwell International. Electronics Research CenterPublisher:
ISBN:
Category :
Languages : en
Pages : 132
Book Description
Mechanisms of Impurity Redistribution in Gallium Arsenide Substrates and Molecular Beam Epitaxially Grown Layers
Author: Susan C. PalmateerPublisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 570
Book Description
Author: