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Author: Pio Capezzuto Publisher: Elsevier ISBN: 0080539106 Category : Science Languages : en Pages : 339
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. - Focuses on the plasma chemistry of amorphous silicon-based materials - Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced - Features an international group of contributors - Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Author: Pio Capezzuto Publisher: Elsevier ISBN: 0080539106 Category : Science Languages : en Pages : 339
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. - Focuses on the plasma chemistry of amorphous silicon-based materials - Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced - Features an international group of contributors - Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Author: Loucas G. Christophorou Publisher: Elsevier ISBN: 1483191079 Category : Science Languages : en Pages : 702
Book Description
Gaseous Dielectrics V presents the proceedings of the Fifth International Symposium on Gaseous Dielectrics, held in Knoxville, Tennessee on May 3–7, 1987. This book discusses the effective coupling between basic and applied research and technology achieved in this area. Organized into 12 chapters, this book begins with an overview of the status of theoretical calculations of excitation and ionization coefficients for electrons. This text then provides an extensive investigation into different phases of discharge development in electronegative gases. Other chapters consider the use of sulfur hexafluoride as a dielectric medium in rail systems and gas circuit breakers. This book reviews as well the primary requirements for a successful gas analysis program, with emphasis on measurement and interpretation methods. The final chapter deals with the progress in dielectric quality assurance of gas insulated substations (GIS), which has resulted from improved scientific knowledge of significant phenomena. This book is a valuable resource for electrical and electronics engineers.
Author: Y. Nakamura Publisher: Elsevier ISBN: 0080532039 Category : Science Languages : en Pages : 581
Book Description
The study of dusty plasmas is now in a vigorous state of development. Dust and plasma coexist in a vast variety of cosmic environments and their research received a major boost in the early 80's with the Voyager spacecraft observations of peculiar features in the Saturnian ring system (e.g. the radial spokes) which could not be explained purely in gravitational terms. In addition, dust streams were measured by the Galileo spacecraft in the Jovian magnetosphere and charged dust in the earth's mesosphere was detected by a direct rocket experiment. Since then the area has greatly expanded with dedicated laboratory experiments verifying aspects of basic physics of charged dust grains in plasmas.These proceedings contain invited and poster papers which were presented by scientists active in the field from more than twenty countries. The material contains new aspects of collective interactions in dusty plasmas. For example, discoveries of dust-acoustic Mach cones, dust ion-acoustic shocks, great dust voids, vortex formation, dust crystallization under microgravity, coexistence of positive negative dust grains in the mesosphere and dust in tokamaks. The more theoretical and simulation studies focus on dynamical and structural properties and kinetic theories of strongly coupled dusty plasmas, as well as on self-organizations and structures, in addition to identifying forces (viz. wakefields, electrostatic and dipolar interactions etc.), which are responsible for charged dust grain attraction and phase transitions.The resulting book is a valuable, state-of-the-art review of the field of dusty plasma physics and will be welcomed by both researchers and graduate students who want to keep up to date in this rapidly growing field.
Author: Michael A. Lieberman Publisher: John Wiley & Sons ISBN: 1394245378 Category : Technology & Engineering Languages : en Pages : 837
Book Description
A new edition of this industry classic on the principles of plasma processing Plasma-based technology and materials processes have been central to the revolution of the last half-century in micro- and nano-electronics. From anisotropic plasma etching on microprocessors, memory, and analog chips, to plasma deposition for creating solar panels and flat-panel displays, plasma-based materials processes have reached huge areas of technology. As key technologies scale down in size from the nano- to the atomic level, further developments in plasma materials processing will only become more essential. Principles of Plasma Discharges and Materials Processing is the foundational introduction to the subject. It offers detailed information and procedures for designing plasma-based equipment and analyzing plasma-based processes, with an emphasis on the abiding fundamentals. Now fully updated to reflect the latest research and data, it promises to continue as an indispensable resource for graduate students and industry professionals in a myriad of technological fields. Readers of the third edition of Principles of Plasma Discharges and Materials Processing will also find: Extensive figures and tables to facilitate understanding A new chapter covering the recent development of processes involving high-pressure capacitive discharges New subsections on discharge and processing chemistry, physics, and diagnostics Principles of Plasma Discharges and Materials Processing is ideal for professionals and process engineers in the field of plasma-assisted materials processing with experience in the field of science or engineering. It is the premiere world-wide basic text for graduate courses in the field.
Author: E. Kasper Publisher: CRC Press ISBN: 1351093525 Category : Technology & Engineering Languages : en Pages : 411
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: John D. Cressler Publisher: CRC Press ISBN: 1420066862 Category : Technology & Engineering Languages : en Pages : 264
Book Description
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Author: P.F. Williams Publisher: Springer Science & Business Media ISBN: 9401158843 Category : Technology & Engineering Languages : en Pages : 610
Book Description
Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.
Author: Sergei Baranovski Publisher: John Wiley & Sons ISBN: 0470095059 Category : Technology & Engineering Languages : en Pages : 498
Book Description
The field of charge conduction in disordered materials is a rapidly evolving area owing to current and potential applications of these materials in various electronic devices This text aims to cover conduction in disordered solids from fundamental physical principles and theories, through practical material development with an emphasis on applications in all areas of electronic materials. International group of contributors Presents basic physical concepts developed in this field in recent years in a uniform manner Brings up-to-date, in a one-stop source, a key evolving area in the field of electronic materials
Author: Pio Capezzuto
Author: Pio Capezzuto
Author: 
Author: Loucas G. Christophorou
Author: Y. Nakamura
Author: Michael A. Lieberman
Author: E. Kasper
Author: John D. Cressler
Author: 
Author: P.F. Williams
Author: Sergei Baranovski