Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Direct Growth of Metallic TiH2 Thin Films by Pulsed Laser Deposition
Author: Growth and Magnetism of Metallic Thin Films and Multilayers by Pulsed-laser Deposition
Author: Jian ShenPulsed Laser Deposition Growth of Heusler Half-metallic Thin Films
Author: Chrissy EmenyGrowth of Metal-nitride Thin Films by Pulsed Laser Deposition
Author: Ian Laurence FarrellPublisher:
ISBN:
Category : Thin films
Languages : en
Pages : 274
Book Description
Epitaxial Growth of Metal Fluoride Thin Films by Pulsed-laser Deposition
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
We have studied growth of GdLiF4 thin films for optical waveguide applications. Epitaxial, c-axis oriented GdLiF4 films wer grown from undoped GdLiF4 targets in an on-axis Pulsed-laser deposition geometry on (100) CaF2. These films exhibit a high density of particulates on the surface which are ejected from the target in the ablation process. Growth from Nd-doped polycrystalline GdLiF4 ablation targets results in smooth films with lower particulate densities, as Nd doping increases the optical absorption of GdLiF4 at the ablation laser wavelength 193 nm and permits efficient pulsed-laser deposition. Optical emission spectra of the ablation pume reveals the presence of atomic F, Gd, and Li, indicating the dissociation of the metal-fluorine bonds in the ablation process. In addition, we find that the residual background oxygen pressure must be reduced to avoid formation of Gd4O3F6 as an impurity oxyfluoride phase in the films.
The Deposition and Characterisation of Metallic Thin Films and Magnetic Multilayers Prepared by Pulsed Laser Ablation Deposition
Author: Anna Marie WiddowsonPublisher:
ISBN:
Category : Laser ablation
Languages : en
Pages : 288
Book Description
Film Synthesis and Growth Using Energetic Beams: Volume 388
Author: H. A. AtwaterPublisher:
ISBN:
Category : Science
Languages : en
Pages : 472
Book Description
With over 16 countries represented, this book represents international developments in the field of film synthesis and growth using energetic beams. It focuses on pulsed-laser deposition. Fundamental issues pertaining to the generation of laser ablation plumes, temperature distributions and collisional effects are described. Ion-assisted pulsed-laser deposition, pulsed-ion deposition, applications of hyperthermal beams and aspects of surface dynamics are discussed. The inclusion of an ion beam with the ablation process leads to some unique modifications in the thin-film growth mechanisms, and hence, film properties. Likewise, the collision of high-mass metal cluster ions with substrates shows promise for growth of novel structures. Also featured are new developments of optoelectronic materials, nitrides and carbon films using a variety of techniques. The effects of beam-induced defects on growth and surface morphology, chemical effects during growth, and characterization of film growth and film properties are addressed.
Pulsed Laser Deposition Assisted Synthesis and Characterization of Titanium Dioxide Thin Films
Author: Jermaine Maurice BradleyPublisher:
ISBN:
Category : Pulsed laser deposition
Languages : en
Pages : 146
Book Description
Investigates the structural and mechanical properties of pulsed laser deposited (PLD) titania (TiO2) thin films. Uses nano-indentation to determine the mechanical properties of the films as a function of the growth parameters.
Fabrication of Thin Films by Pulsed Laser Deposition for Clean Energy Applications
Author: Xiaojun ZhangPublisher:
ISBN:
Category :
Languages : en
Pages : 79
Book Description
Pulsed laser deposition (PLD) is a physical vapor deposition technique for thin film fabrication. Compared with other techniques, pulsed laser deposition technique has advantages such as stoichiometry, flexibility, versatility, lower deposition temperature, ability to grow metastable materials. Because of these advantages, pulsed laser deposition has been widely used in materials research. In this dissertation, pulsed laser deposition has been used to grow thin films for solid oxide fuel cell, light-emitting diode, and solar cell applications. Firstly, yttria-stabilized zirconia (YSZ) and cerium dioxide (CeO2) thin films are deposited in oxygen-deficient environments; their properties are compared to those deposited in oxygen-rich environments. Oxygen-deficient films are highly (001)-oriented, which corresponds to a surface that is expected to be forbidden based on Tasker's theoretical calculation of stoichiometric ionic crystals. A model considering non-stoichiometry-induced surface relaxation and surface atomic density is proposed to explain the orientation phenomenon observed under oxygen-deficient deposition conditions. This model is consistent with previous experimental results for indium tin oxide (ITO), SnO2 and NiO thin films deposited under similar conditions. Detailed studies of the preferred orientation of these oxygen-deficient ionic crystals are of direct relevance to the fabrication of films for use in solid oxide fuel cells. Secondly, undoped, Cu-doped, Se-enriched, Cu2Se-doped, Ag-doped, Ag2Se-doped, and nitrogen-doped ZnSe films have been grown on fused quartz substrates by pulsed laser deposition. It is found that adding a small amount (~2 mol%) of Cu2Se can significantly improve crystallinity and (111) texturing of ZnSe films. While the other films are highly resistive, Cu2Se-doped ZnSe films are p-type conducting with hole concentrations of ~ cm-3 and resistivity of ~0.098 ohm*cm (compared with previous reports of ~ cm-3 and 0.75 ohm*cm, respectively). The successful heavy p-type doping of ZnSe films is attributed to substitution of Zn atoms with Cu while limiting selenium-vacancy-associated compensating defects with additional selenium. Nitrogen doping has turned ZnSe films more favorable to wurtzite structures. Two newly observed Raman peaks at 555 cm-1 and 602 cm-1 are assigned to N local vibrational modes of hexagonal ZnSe structures. The nitrogen-doped ZnSe films are not conductive, which might be due to compensating defects arising from the presence of native defects or other impurities. This work is of importance to solve doping difficulties and contact problems of wide-bandgap semiconductors. Finally, batch growth of thin films by pulsed laser deposition has been tried. Using the natural temperature gradient, films with different deposition temperatures have been fabricated together. With change of deposition temperatures, ZnSe films are shown to have problems associated with crystalline defects, selenium loss, or phase separation. ZnSe films with improved crystallinity and no phase separation have been achieved using a 16 mol% Se enriched target. Multi-plume pulsed laser deposition has been proposed and discussed. With directionality of PLD plumes and non-uniformity of PLD films, this system is supposed to be more suitable for high-throughput compound thin film fabrication, which makes it very promising for efficient materials optimization and exploration. High-throughput fabrication of compound thin films has been successfully achieved using this system.
Structural Characteristics of Metal Oxide Thin Films Grown by Pulsed Laser Deposition
Author: Haiyan FanPublisher:
ISBN:
Category : Free radicals (Chemistry)
Languages : en
Pages : 306
Book Description