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Author: David J. Fisher Publisher: Trans Tech Publications Ltd ISBN: 3038133817 Category : Technology & Engineering Languages : en Pages : 230
Book Description
This work is essentially an update of previous compilations of information on the diffusivity of elements in semiconductor-grade silicon. It subsumes the data contained in B.L.Sharmas monograph on Diffusion in Semiconductors (Trans Tech Publications, 1970), plus the data contained in Diffusion and Defect Data (Diffusion in Silicon) Volume 45 (1986), Defect and Diffusion Forum (Diffusion in Silicon - 10 years of Research) Volumes 153-155 (1998), Defect and Diffusion Forum (Diffusion in Silicon - a Seven-Year Retrospective) Volume 241 (2005) and the latest data from recent Semiconductor Retrospectives: Defect and Diffusion Forum, Volumes 245-246, Volumes 261-262, Volume 272 and Volume 282. In addition, the resultant 400 items of data were analysed in the hope of finding some unifying correlation. It was indeed found that all of the points (each the average of many independent measurements) seemed to fall on a number of distinct straight lines passing through the origin of a plot of activation energy versus atomic radius. However, it remained unclear how these correlations could be explained.
Author: David J. Fisher Publisher: Trans Tech Publications Ltd ISBN: 3038133817 Category : Technology & Engineering Languages : en Pages : 230
Book Description
This work is essentially an update of previous compilations of information on the diffusivity of elements in semiconductor-grade silicon. It subsumes the data contained in B.L.Sharmas monograph on Diffusion in Semiconductors (Trans Tech Publications, 1970), plus the data contained in Diffusion and Defect Data (Diffusion in Silicon) Volume 45 (1986), Defect and Diffusion Forum (Diffusion in Silicon - 10 years of Research) Volumes 153-155 (1998), Defect and Diffusion Forum (Diffusion in Silicon - a Seven-Year Retrospective) Volume 241 (2005) and the latest data from recent Semiconductor Retrospectives: Defect and Diffusion Forum, Volumes 245-246, Volumes 261-262, Volume 272 and Volume 282. In addition, the resultant 400 items of data were analysed in the hope of finding some unifying correlation. It was indeed found that all of the points (each the average of many independent measurements) seemed to fall on a number of distinct straight lines passing through the origin of a plot of activation energy versus atomic radius. However, it remained unclear how these correlations could be explained.
Author: Rajiv Kohli Publisher: William Andrew ISBN: 0323431739 Category : Science Languages : en Pages : 193
Book Description
Developments in Surface Contamination and Cleaning, Volume Ten, provides a state-of-the-art guide to the current knowledge on the behavior of film-type and particulate surface contaminants and their cleaning methods. This newest volume in the series discusses mechanisms of particle adhesion, particle behavior in liquid systems, and metallic contamination and its impact. In addition, the book includes a discussion of the types of contaminants, with resources to deal with them and information on environmental issues related to surface contamination and cleaning. Taken as a whole, the series forms a unique reference for professionals and academics working in the area of surface contamination and cleaning that also includes information on cleaning at the micro and nano scales. - Written by established experts in the contamination field that provide an authoritative resource - Presents a comprehensive review of new trends in contaminants and resources for dealing with those contaminants - Contains detailed case studies to illustrate various scenarios
Author: George Gibbs Publisher: ISBN: 9781681176437 Category : Languages : en Pages : 284
Book Description
Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Author: H. J. V. Tyrrell Publisher: Butterworth-Heinemann ISBN: 1483100898 Category : Science Languages : en Pages : 465
Book Description
Diffusion in Liquids: A Theoretical and Experimental Study aims to discuss the principles, applications, and advances in the field of diffusion, thermal diffusion, and thermal conduction in liquid systems. The book covers topics such as the principles of non-equilibrium thermodynamics; diffusion in binary and multicompetent systems; and experimental methods of studying diffusion processes in liquids. Also covered in the book are topics such as the theoretical interpretations of diffusion coefficients; hydrodynamic and kinetic theories; and diffusion in electrolyte systems. The text is recommended for physicists who would like to know more about the concepts and updates in the field of diffusion.
Author: Jung Han Choi Publisher: CRC Press ISBN: 1351242288 Category : Technology & Engineering Languages : en Pages : 358
Book Description
This book explores up-to-date research trends and achievements on low-power and high-speed technologies in both electronics and optics. It offers unique insight into low-power and high-speed approaches ranging from devices, ICs, sub-systems and networks that can be exploited for future mobile devices, 5G networks, Internet of Things (IoT), and data centers. It collects heterogeneous topics in place to catch and predict future research directions of devices, circuits, subsystems, and networks for low-power and higher-speed technologies. Even it handles about artificial intelligence (AI) showing examples how AI technology can be combined with concurrent electronics. Written by top international experts in both industry and academia, the book discusses new devices, such as Si-on-chip laser, interconnections using graphenes, machine learning combined with CMOS technology, progresses of SiGe devices for higher-speed electronices for optic, co-design low-power and high-speed circuits for optical interconnect, low-power network-on-chip (NoC) router, X-ray quantum counting, and a design of low-power power amplifiers. Covers modern high-speed and low-power electronics and photonics. Discusses novel nano-devices, electronics & photonic sub-systems for high-speed and low-power systems, and many other emerging technologies like Si photonic technology, Si-on-chip laser, low-power driver for optic device, and network-on-chip router. Includes practical applications and recent results with respect to emerging low-power systems. Addresses the future perspective of silicon photonics as a low-power interconnections and communication applications.
Author: Jonathan S. Morrell Publisher: Springer Science & Business Media ISBN: 1461475910 Category : Technology & Engineering Languages : en Pages : 320
Book Description
Uranium Processing and Properties describes developments in uranium science, engineering and processing and covers a broad spectrum of topics and applications in which these technologies are harnessed. This book offers the most up-to-date knowledge on emerging nuclear technologies and applications while also covering new and established practices for working with uranium supplies. The book also aims to provide insights into current research and processing technology developments in order to stimulate and motivate innovation among readers. Topics covered include casting technology, plate and sheet rolling, machining of uranium and uranium alloys, forming and fabrication techniques, corrosion kinetics, nondestructive evaluation and thermal modeling.
Author: Mark J. Jackson Publisher: Springer Science & Business Media ISBN: 1461431166 Category : Technology & Engineering Languages : en Pages : 107
Book Description
High Performance Grinding and Advanced Cutting Tools discusses the fundamentals and advances in high performance grinding processes, and provides a complete overview of newly-developing areas in the field. Topics covered are grinding tool formulation and structure, grinding wheel design and conditioning and applications using high performance grinding wheels. Also included are heat treatment strategies for grinding tools, using grinding tools for high speed applications, laser-based and diamond dressing techniques, high-efficiency deep grinding, VIPER grinding, and new grinding wheels.
Author: H. Julian Goldsmid Publisher: Springer Science & Business Media ISBN: 3642007163 Category : Science Languages : en Pages : 250
Book Description
Introduction to Thermoelectricity is the latest work by Professor Julian Goldsmid drawing on his 55 years experience in the field. The theory of the thermoelectric and related phenomena is presented in sufficient detail to enable researchers to understand their observations and develop improved thermoelectric materials. The methods for the selection of materials and their improvement are discussed. Thermoelectric materials for use in refrigeration and electrical generation are reviewed. Experimental techniques for the measurement of properties and for the production of thermoelements are described. Special emphasis is placed on nanotechnology which promises to yield great improvements in the efficiency of thermoelectric devices. Chapters are also devoted to transverse thermoelectric effects and thermionic energy conversion, both techniques offering the promise of important applications in the future.
Author: David J. Fisher
Author: David J. Fisher
Author: Rajiv Kohli
Author: George Gibbs
Author: H. J. V. Tyrrell
Author: Jung Han Choi
Author: Jonathan S. Morrell
Author: G. Alefeld
Author: Mark J. Jackson
Author: Who's Who Marquis
Author: H. Julian Goldsmid