DIFFUSION THERMIQUE RAPIDE DE DOPANTS DANS LE SILICIUM MONOCRISTALLIN A PARTIR DE SILICES DOPEES PDF Download
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Book Description
NOUS AVONS RESUME DANS CE TRAVAIL LES PRINCIPAUX MODELES DE DIFFUSION QUI PERMETTENT DE COMPRENDRE LES MECANISMES DE DIFFUSION DU PHOSPHORE DANS LE SILICIUM A PARTIR DE SILICES DOPEE. LE SIMPLE MODELE DE FERMI OU CELUI DE FAIR NE PERMETTENT PAS DE DECRIRE LA CINETIQUE DE DIFFUSION DU PHOSPHORE DANS LE SILICIUM. LE COUPLAGE COMPLET ENTRE LES LACUNES, LES INTERSTITIELLES ET LES IMPURETES CONSTITUENT UN MODELE PLUS GENERAL, PRENANT EN COMPTE LA RECOMBINAISON DES DEFAUTS PONCTUELS. NOUS AVONS SIMULE LA DIFFUSION DU PHOSPHORE A PARTIR DE SOURCES SOD (SPIN-ON DOPANT) DANS LE FOUR CONVENTIONNEL A L'AIDE DU MODELE A COUPLAGE COMPLET, CE DERNIER APPROCHE CORRECTEMENT LES PROFILS EXPERIMENTAUX. CEPENDANT LA SIMULATION DE CETTE MEME DIFFUSION DANS LE CAS DU FOUR A LAMPES, MONTRE QUE LE MODELE A COUPLAGE COMPLET AVEC SES EQUATIONS DE DIFFUSION EN EQUILIBRE EST INCAPABLE D'INTERPRETER LA DIFFUSION RAPIDE DU PHOSPHORE DANS LE SILICIUM. NOUS AVONS PAR AILLEURS BIEN APPROCHE LA REDIFFUSION DU PHOSPHORE DANS LE SILICIUM PAR RECUIT DANS LE FOUR A LAMPES A L'AIDE DE CE MODELE. NOUS EN AVONS CONCLU QUE L'INVALIDITE DE CE MODELE POUR LA DIFFUSION THERMIQUE RAPIDE DU PHOSPHORE A PARTIR DE FILMS SOD DANS LE SILICIUM EST D'ORIGINE DES EFFETS TRANSITOIRES DE LA CINETIQUE DE DIFFUSION. NOUS AVONS SUGGERE QUE PLUS PARTICULIEREMENT LA REACTION PERMETTANT L'INJECTION DE PHOSPHORE INTERSTITIEL EST HORS EQUILIBRE ET PERMET D'INJECTER DE GRANDES QUANTITES DE PHOSPHORE INTERSTITIELS DANS LE SILICIUM CE QUI EXPLIQUERAIT L'ACCELERATION DE LA CINETIQUE DE DIFFUSION THERMIQUE RAPIDE DU PHOSPHORE. NOUS AVONS UTILISE LES SOURCES SOD DE DOPANTS ET LA DIFFUSION DANS LE FOUR A LAMPES POUR REALISER DES CELLULES SOLAIRES EN UN SEUL CYCLE THERMIQUE DE DUREES INFERIEURES A UNE MINUTE. L'EMETTEUR, SA PASSIVATION PAR LE FILM D'OXYDE RESIDUEL AINSI QUE LE CHAMP ARRIERE ONT AINSI ETE FORMES SIMULTANEMENT. LE RENDEMENT ATTEINT EST DE L'ORDRE DE 12.8% SANS CHAMP ARRIERE ET DE 14% AVEC CE DERNIER.
Book Description
NOUS AVONS RESUME DANS CE TRAVAIL LES PRINCIPAUX MODELES DE DIFFUSION QUI PERMETTENT DE COMPRENDRE LES MECANISMES DE DIFFUSION DU PHOSPHORE DANS LE SILICIUM A PARTIR DE SILICES DOPEE. LE SIMPLE MODELE DE FERMI OU CELUI DE FAIR NE PERMETTENT PAS DE DECRIRE LA CINETIQUE DE DIFFUSION DU PHOSPHORE DANS LE SILICIUM. LE COUPLAGE COMPLET ENTRE LES LACUNES, LES INTERSTITIELLES ET LES IMPURETES CONSTITUENT UN MODELE PLUS GENERAL, PRENANT EN COMPTE LA RECOMBINAISON DES DEFAUTS PONCTUELS. NOUS AVONS SIMULE LA DIFFUSION DU PHOSPHORE A PARTIR DE SOURCES SOD (SPIN-ON DOPANT) DANS LE FOUR CONVENTIONNEL A L'AIDE DU MODELE A COUPLAGE COMPLET, CE DERNIER APPROCHE CORRECTEMENT LES PROFILS EXPERIMENTAUX. CEPENDANT LA SIMULATION DE CETTE MEME DIFFUSION DANS LE CAS DU FOUR A LAMPES, MONTRE QUE LE MODELE A COUPLAGE COMPLET AVEC SES EQUATIONS DE DIFFUSION EN EQUILIBRE EST INCAPABLE D'INTERPRETER LA DIFFUSION RAPIDE DU PHOSPHORE DANS LE SILICIUM. NOUS AVONS PAR AILLEURS BIEN APPROCHE LA REDIFFUSION DU PHOSPHORE DANS LE SILICIUM PAR RECUIT DANS LE FOUR A LAMPES A L'AIDE DE CE MODELE. NOUS EN AVONS CONCLU QUE L'INVALIDITE DE CE MODELE POUR LA DIFFUSION THERMIQUE RAPIDE DU PHOSPHORE A PARTIR DE FILMS SOD DANS LE SILICIUM EST D'ORIGINE DES EFFETS TRANSITOIRES DE LA CINETIQUE DE DIFFUSION. NOUS AVONS SUGGERE QUE PLUS PARTICULIEREMENT LA REACTION PERMETTANT L'INJECTION DE PHOSPHORE INTERSTITIEL EST HORS EQUILIBRE ET PERMET D'INJECTER DE GRANDES QUANTITES DE PHOSPHORE INTERSTITIELS DANS LE SILICIUM CE QUI EXPLIQUERAIT L'ACCELERATION DE LA CINETIQUE DE DIFFUSION THERMIQUE RAPIDE DU PHOSPHORE. NOUS AVONS UTILISE LES SOURCES SOD DE DOPANTS ET LA DIFFUSION DANS LE FOUR A LAMPES POUR REALISER DES CELLULES SOLAIRES EN UN SEUL CYCLE THERMIQUE DE DUREES INFERIEURES A UNE MINUTE. L'EMETTEUR, SA PASSIVATION PAR LE FILM D'OXYDE RESIDUEL AINSI QUE LE CHAMP ARRIERE ONT AINSI ETE FORMES SIMULTANEMENT. LE RENDEMENT ATTEINT EST DE L'ORDRE DE 12.8% SANS CHAMP ARRIERE ET DE 14% AVEC CE DERNIER.
Author: Ahmed Belasri Publisher: Springer Nature ISBN: 9811554447 Category : Technology & Engineering Languages : en Pages : 659
Book Description
This book highlights peer reviewed articles from the 1st International Conference on Renewable Energy and Energy Conversion, ICREEC 2019, held at Oran in Algeria. It presents recent advances, brings together researchers and professionals in the area and presents a platform to exchange ideas and establish opportunities for a sustainable future. Topics covered in this proceedings, but not limited to, are photovoltaic systems, bioenergy, laser and plasma technology, fluid and flow for energy, software for energy and impact of energy on the environment.
Author: John Wilfred Orton Publisher: ISBN: 0199695822 Category : Science Languages : en Pages : 529
Book Description
The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early 'home-made' variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called 'low-dimensional structures' (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Author: Agnes Buka Publisher: World Scientific ISBN: 1848167997 Category : Science Languages : en Pages : 299
Book Description
The book intends to give a state-of-the-art overview of flexoelectricity, a linear physical coupling between mechanical (orientational) deformations and electric polarization, which is specific to systems with orientational order, such as liquid crystals. Chapters written by experts in the field shed light on theoretical as well as experimental aspects of research carried out since the discovery of flexoelectricity. Besides a common macroscopic (continuum) description the microscopic theory of flexoelectricity is also addressed. Electro-optic effects due to or modified by flexoelectricity as well as various (direct and indirect) measurement methods are discussed. Special emphasis is given to the role of flexoelectricity in pattern-forming instabilities. While the main focus of the book lies in flexoelectricity in nematic liquid crystals, peculiarities of other mesophases (bent-core systems, cholesterics, and smectics) are also reviewed. Flexoelectricity has relevance to biological (living) systems and can also offer possibilities for technical applications. The basics of these two interdisciplinary fields are also summarized.
Author: Jean-Marie Basset Publisher: Wiley-VCH ISBN: 9783527319725 Category : Science Languages : en Pages : 725
Book Description
Covering everything from the basics to recent applications, this monograph represents an advanced overview of the field. Edited by internationally acclaimed experts respected throughout the community, the book is clearly divided into sections on fundamental and applied surface organometallic chemistry. Backed by numerous examples from the recent literature, this is a key reference for all chemists.
Author: Paolo Mele Publisher: ISBN: 9781536160864 Category : Zinc oxide thin films Languages : en Pages : 0
Book Description
Zinc oxide (ZnO) is an n-type semiconductor with versatile applications such as optical devices in ultraviolet region, piezoelectric transducers, transparent electrode for solar cells and gas sensors. This book "ZnO Thin Films: Properties, Performance and Applications" gives a deep insight in the intriguing science of zinc oxide thin films. It is devoted to cover the most recent advances and reviews the state of the art of ZnO thin films applications involving energy harvesting, microelectronics, magnetic devices, photocatalysis, photovoltaics, optics, thermoelectricity, piezoelectricity, electrochemistry, temperature sensing. It serves as a fundamental information source on the techniques and methodologies involved in zinc oxide thin films growth, characterization, post-deposition plasma treatments and device processing. This book will be invaluable to the experts to consolidate their knowledge and provide insight and inspiration to beginners wishing to learn about zinc oxide thin films.
Author: David Adler Publisher: Springer Science & Business Media ISBN: 1489922601 Category : Science Languages : en Pages : 448
Book Description
The Institute for Amorphous Studies was founded in 1982 as the international center for the investigation of amorphous mate rials. It has since played an important role in promoting the und er standing of disordered matter in general. An Institute lecture series on "Fundamentals of Amorphous Materials and Devices" was held during 1982-83 with distinguished speakers from universities and industry. These events were free and open to the public ,and were attended by many representatives of the scientific community. The lectures themselves were highly successful inasmuch as they provided not only formal instruction but also an opportunity for vigorous and stimulating debate. That last element could not be captured within the pages of a book I but the lectures concentrated on the latest advances in the field I which is why their essential contents are he re reproduced in collective form. Together they constitute an interdisciplinary status report of the field. The speakers brought many different viewpoints and a variety of back ground experiences io bear on the problems involved I but though language and conventions vary I the essential unity of the concerns is very clear I as indeed are the ultimate benefits of the many-sided approach.
Author: Jerome V. Moloney Publisher: Springer Science & Business Media ISBN: 9780387985817 Category : Business & Economics Languages : en Pages : 270
Book Description
Mathematical methods play a significant role in the rapidly growing field of nonlinear optical materials. This volume discusses a number of successful or promising contributions. The overall theme of this volume is twofold: (1) the challenges faced in computing and optimizing nonlinear optical material properties; and (2) the exploitation of these properties in important areas of application. These include the design of optical amplifiers and lasers, as well as novel optical switches. Research topics in this volume include how to exploit the magnetooptic effect, how to work with the nonlinear optical response of materials, how to predict laser-induced breakdown in efficient optical devices, and how to handle electron cloud distortion in femtosecond processes.
Author: ABDELAZIZ.. LACHIQ
Author: ABDELAZIZ.. LACHIQ
Author: Ahmed Belasri
Author: John Wilfred Orton
Author: Agnes Buka
Author: Jean-Marie Basset
Author: Paolo Mele
Author: David Adler
Author: Jerome V. Moloney
Author: Universidade de Coimbra