Author: D. GuptaPublisher: Trans Tech Publications Ltd
ISBN: 3035702926
Category : Technology & Engineering
Languages : en
Pages : 290
Book Description
Defect and Diffusion Forum Vol. 59
Diffusion Processes in High Technology Materials
Author: D. GuptaPublisher: Trans Tech Publications Ltd
ISBN: 3035702926
Category : Technology & Engineering
Languages : en
Pages : 290
Book Description
Defect and Diffusion Forum Vol. 59
Diffusion Processes in High Technology Materials
Author: D. GuptaDiffusion Processes in Advanced Technological Materials
Author: Devendra GuptaPublisher: Springer Science & Business Media
ISBN: 9780080947082
Category : Science
Languages : en
Pages : 552
Book Description
This new game book for understanding atoms at play aims to document diffusion processes and various other properties operative in advanced technological materials. Diffusion in functional organic chemicals, polymers, granular materials, complex oxides, metallic glasses, and quasi-crystals among other advanced materials is a highly interactive and synergic phenomenon. A large variety of atomic arrangements are possible. Each arrangement affects the performance of these advanced, polycrystalline multiphase materials used in photonics, MEMS, electronics, and other applications of current and developing interest. This book is written by pioneers in industry and academia for engineers, chemists, and physicists in industry and academia at the forefront of today's challenges in nanotechnology, surface science, materials science, and semiconductors.
Diffusion Processes in High Technology Materials
Author: Diffusion Processes in Advanced Technological Materials
Author: Devendra GuptaPublisher: Springer
ISBN: 9783540860334
Category : Technology & Engineering
Languages : en
Pages : 532
Book Description
My 12-year-old granddaughter Nina Alesi once asked me, "Grandpa, you are a scientist at IBM, so what do you do?" I tried to reply, "Oh, I watch atoms move. . . " But before I could finish this sentence, my 7-year-old grandson Vinnie interjected, "Grandpa, do atoms play soccer?" This book is about the games atoms play in diffusion and various other properties of materials. While diffusion has been studied for more than 100 years in solids, its importance, excitement, and intellectual chal lenges remain undiminished with time. It is central to understanding the relationship between the structure and properties of naturally occurring and synthetic materials, which is at the root of current technological development and innovations. The diversity of material has led to spec tacular progress in functional inorganics, polymers, granular materials, photonics, complex oxides, metallic glasses, quasi-crystals, and strongly correlated electronic materials. The integrity of complex materials pack ages is determined by diffusion, a highly interactive and synergic phe nomenon that interrelates to the microstructure, the microchemistry, and the superimposed physical fields. While the various physico-chemical properties of the materials are affected by diffusion, they determine diffu sion itself. This book, which is intended to document the diffusive processes operative in advanced technological materials, has been written by pio neers in industry and academia.
Diffusion processes in high technology materials
Author: D. GuptaEnergy Research Abstracts
Author: Government Reports Announcements & Index
Author: Advanced Diffusion Processes and Phenomena
Author: Andreas ÖchsnerPublisher: Trans Tech Publications Ltd
ISBN: 3038265144
Category : Technology & Engineering
Languages : en
Pages : 234
Book Description
Volume is indexed by Thomson Reuters BCI (WoS). This topical volume on Advanced Diffusion Processes and Phenomena addresses diffusion in a wider sense of not only mass diffusion but also heat diffusion in fluids and solids. Both diffusion phenomena play an important role in the characterization of engineering materials and corresponding structures. Understanding these different transport phenomena at many levels, from atomistic to macro, has therefore long attracted the attention of many researchers in materials science and engineering and related disciplines. The present topical volume captures a representative cross-section of some of the recent advances in the area of mass and heat transport. Reflecting the enormous breadth of the area, the range of topics covered is accordingly very large.
GaAs High-Speed Devices
Author: C. Y. ChangPublisher: John Wiley & Sons
ISBN: 9780471856412
Category : Technology & Engineering
Languages : en
Pages : 632
Book Description
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.